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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW26NM60ND

Name: STW26NM60ND
Brand: STMicroelectronics
SKU: STW26NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW26NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW26NM60ND.pdf

Description:: MOSFET N-CH 600V 21A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW26NM60ND from STMicroelectronics is an N-channel 600 V, 0.145 Ω typ. R_DS(on), 21 A FDmesh™ II Power MOSFET in TO-247 package, featuring intrinsic fast-recovery body diode and 100% avalanche tested ruggedness. It delivers low gate charge (54.6 nC), high dv/dt immunity (40 V/ns), and is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS.

For engineers reviewing the STW26NM60ND datasheet, STW26NM60ND pinout, STW26NM60ND application, or STW26NM60ND equivalent, this page provides verified electrical ratings, thermal resistance (R_thj-case = 0.66 °C/W), diode recovery performance (Q_rr = 1.39 µC @ T_J = 25 °C), and real-world switching behavior (t_d(off) = 69 ns) - all critical for hard-switched PFC and resonant converter design.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ strip-layout vertical structure to achieve ultra-low on-resistance and superior switching efficiency. Its integrated fast-recovery body diode enables reliable operation in synchronous rectification and bidirectional power flow without external diodes.

The device supports high-voltage hard switching with guaranteed 40 V/ns dv/dt ruggedness and 100 mJ single-pulse avalanche energy. Thermal design is enabled by low junction-to-case resistance (0.66 °C/W) and a TO-247 package optimized for heatsink mounting and high-power dissipation (P_TOT = 190 W at T_C = 25 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports primary-side switching in 400 V AC-input offline SMPS without derating.
R_DS(on) typ.	0.145 Ω - Enables <1.5 W conduction loss at 10.5 A DC, reducing thermal load in continuous conduction mode.
Q_g	54.6 nC - Low gate drive energy requirement simplifies gate driver selection and reduces switching losses in high-frequency designs.
t_d(off)	69 ns - Fast turn-off supports >100 kHz operation in phase-shifted full-bridge topologies.
Q_rr	1.39 µC (T_J = 25 °C) - Minimizes diode reverse recovery loss and EMI in bridge-leg commutation.
R_thj-case	0.66 °C/W - Allows direct heatsink mounting for efficient thermal management up to 190 W power dissipation.
E_AS	100 mJ - Withstands unclamped inductive switching events common in motor drives and UPS systems.

Pinout & Package

STW26NM60ND is housed in a TO-247 package with isolated tab (drain-connected), optimized for high-power thermal and electrical performance. The three-terminal configuration supports standard high-current PCB layout and mechanical mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level gate drive; low 2.5 Ω intrinsic gate resistance ensures stable switching waveform integrity.
2 (Drain)	High-voltage power output	Connected to internal die backside and metal tab; requires insulated mounting when heatsink is grounded.
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; low-inductance source connection critical for minimizing voltage spikes during dI/dt transients.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against transient overvoltage events without derating, eliminating need for external snubbers in many applications.
Low C_iss/C_oss/C_rss	1817 pF / 90 pF / 4.4 pF - Reduces Miller effect and improves controllability during high-dv/dt transitions in bridge configurations.
Intrinsic fast-recovery body diode	t_rr = 170 ns, Q_rr = 1.39 µC - Enables zero-voltage switching in LLC and phase-shifted topologies without external diode replacement.
High dv/dt ruggedness	40 V/ns - Prevents false turn-on during rapid voltage transients across drain-source, critical for half-bridge leg reliability.
FDmesh™ II technology	Strip-layout vertical structure - Achieves 0.145 Ω R_DS(on) at 600 V while maintaining low gate charge and high SOA margin.

Applications

Industrial Switch-Mode Power Supplies

Phase-Shifted Full-Bridge Converters

Use Scenario: Primary-side switch in 1–3 kW telecom and server PSUs operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 21 A continuous current with ZVS capability.

Use Value: Low R_DS(on) and fast t_d(off) reduce conduction and switching losses, enabling >95% efficiency at full load.

Use Scenario: Bridge-leg MOSFET in isolated DC–DC converters for EV charging stations and renewable energy inverters.

IC Role / Device Role / Timing Role: Hard- and soft-switched power switch with body-diode commutation during dead-time intervals.

Use Value: Intrinsic fast-recovery diode eliminates need for discrete SiC Schottky, lowering BOM cost and layout complexity.

Uninterruptible Power Supplies

Motor Drive Inverters

Use Scenario: Output stage switch in double-conversion online UPS systems requiring high reliability under overload and short-circuit conditions.

IC Role / Device Role / Timing Role: Main inverter switch subjected to repetitive avalanche stress during battery-mode transfer events.

Use Value: 100 mJ E_AS rating and 40 V/ns dv/dt immunity ensure fail-safe operation without additional protection circuitry.

Use Scenario: Inverter leg switch in HVAC compressors and industrial servo drives operating at 10–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-voltage, high-current switching device managing regenerative braking energy via body diode conduction.

Use Value: Low Q_rr and controlled trr minimize shoot-through risk and reduce EMI generation during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 0.190 Ω R_DS(on), 21 A, TO-247, CoolMOS™ C7 - higher R_DS(on), lower Q_g (43 nC)	Lower gate charge enables faster switching but higher conduction loss at high DC current	Preferable where switching loss dominates (e.g., >200 kHz resonant converters); less suitable for high-current PFC stages.
IXFH50N60P	600 V, 0.120 Ω R_DS(on), 50 A, TO-247, HiPerFET™ - lower R_DS(on), higher ID, no intrinsic fast diode	Requires external anti-parallel diode for bidirectional conduction; higher thermal mass	Better for pure hard-switched applications with external diode control; unsuitable where body-diode recovery is critical (e.g., ZVS).

Compared with IPP60R190C7 and IXFH50N60P, STW26NM60ND uniquely balances low R_DS(on), fast body-diode recovery, and proven avalanche ruggedness - making it optimal for bridge-based topologies where both conduction efficiency and commutation reliability are simultaneously required.

Availability

STW26NM60ND is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, phase-shifted full-bridge converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for STW26NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

STW26NM60ND belongs to ST's FDmesh™ II Power MOSFET product line, developed specifically for high-efficiency, high-reliability power conversion in industrial SMPS, UPS, and motor drives - emphasizing ruggedness, low loss, and integration of fast-recovery diode functionality.

FAQ

What is the maximum continuous drain current for STW26NM60ND at case temperature 100 °C?

The maximum continuous drain current (I_D) is 13 A at T_C = 100 °C, as specified in Table 2 of the official datasheet. This rating reflects thermal limitation due to junction-to-case thermal resistance (0.66 °C/W) and maximum junction temperature (150 °C), not package current-carrying capacity alone.

Does STW26NM60ND have a built-in body diode, and what are its key recovery parameters?

Yes, STW26NM60ND features an intrinsic fast-recovery body diode. At T_J = 25 °C, ISD = 21 A, V_DD = 60 V, and di/dt = 100 A/µs, its reverse recovery time (t_rr) is 170 ns and reverse recovery charge (Q_rr) is 1.39 µC, per Table 7 in the datasheet.

Can STW26NM60ND be used in avalanche mode, and what is its rated single-pulse energy?

Yes - STW26NM60ND is 100% avalanche tested. Its single-pulse avalanche energy (E_AS) is 100 mJ when starting from T_J = 25 °C, I_D = I_AS, and V_DD = 50 V, as defined in Table 4. This rating applies to unclamped inductive switching events within safe operating area limits.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 3 V to 5 V (min to max) at T_C = 25 °C and I_D = 250 µA. Figure 14 shows normalized on-resistance vs. temperature, and Figure 17 confirms V_GS(th) decreases with rising junction temperature - typical drift is –3.5 mV/°C, consistent with silicon MOSFET physics.

STW26NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 175mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54.6 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1817 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW26NM60ND FAQ

1.How can I place an order for STW26NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW26NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW26NM60ND reliable?

The price and inventory of STW26NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW26NM60ND is usually 5 days.

3.What payment methods are accepted for STW26NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW26NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW26NM60ND?

STW26NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW26NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW26NM60ND?

For technical support, including STW26NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW26NM60ND requirements.

6.How does Aetrix verify that STW26NM60ND is sourced from the original manufacturer or authorized distributors?

All STW26NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW26NM60ND meets industry standards.

7.What is the process for return or replacement of STW26NM60ND?

All STW26NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW26NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW26NM60ND part is unused and in its original packaging.

Return procedure for STW26NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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