STMicroelectronics STW27N60M2-EP

Overview

STW27N60M2-EP from STMicroelectronics is an N-channel 600 V, 20 A Power MOSFET in TO-247 package, fabricated with MDmesh M2 Enhanced Performance (EP) technology. It delivers 150 mΩ typical R_DS(on), 33 nC total gate charge, and 70 pF output capacitance (C_OSS), enabling ultra-low turn-off switching losses for high-frequency hard-switched converters operating above 150 kHz in industrial SMPS and solar inverters.

For engineers reviewing the STW27N60M2-EP datasheet, STW27N60M2-EP pinout, STW27N60M2-EP application, or STW27N60M2-EP equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 100% avalanche-tested reliability, Zener-protected gate, and optimized C_OSS profile for resonant and phase-shifted topologies.

Technical Context

This MOSFET employs a strip layout and enhanced vertical structure to minimize conduction and switching losses simultaneously. Its low 4 Ω intrinsic gate resistance and 1320 pF input capacitance support fast, controlled switching with reduced gate drive power demand.

The device integrates a robust body diode with 271 ns reverse recovery time at 25 °C and 352 ns at 150 °C, plus 3.44 µC Q_rr, making it suitable for synchronous rectification and bidirectional energy transfer where diode recovery behavior critically impacts EMI and efficiency.

Key Specifications

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole configuration with industry-standard mechanical dimensions (D = 20.0 mm, E = 15.6 mm, L = 14.5 mm). Tab is electrically connected to Drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency 600 V power switching applications.

Compared with STW20N60M2, STW27N60M2-EP provides 3 A higher continuous current and 30 mΩ lower R_DS(on) without increasing gate charge; versus IPW60R017C7, it avoids Kelvin-source routing complexity while maintaining adequate switching performance for 150–250 kHz industrial converters.

Availability

STW27N60M2-EP is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar DC-DC optimizers, and high-frequency induction heating systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW27N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh M2 EP series-engineered specifically for high-frequency, high-efficiency power conversion in industrial SMPS, solar inverters, and induction heating, where low R_DS(on), low Q_g, and rugged dv/dt performance are critical.

FAQ

Is STW27N60M2-EP suitable for zero-voltage switching (ZVS) topologies?

Yes. Its 70 pF C_OSS and 146 pF C_OSS(eq) enable predictable resonant tank behavior in LLC and phase-shifted full-bridge converters. Measured 55.6 ns turn-off delay and 6.3 ns fall time support precise ZVS window control at 200 kHz, reducing switching loss by up to 40% compared to standard 600 V MOSFETs.

What is the maximum recommended gate resistor value for 200 kHz operation?

A 4.7 Ω gate resistor is validated per datasheet test conditions (V_DD = 300 V, I_D = 10 A), yielding 13.4 ns turn-on delay and 55.6 ns turn-off delay. For 200 kHz with 50% duty cycle, values between 3.3 Ω and 6.8 Ω maintain safe dV/dt control while limiting gate loss to <150 mW at 10 V drive amplitude.

Does the body diode require external snubbing in hard-switched PFC circuits?

No external snubber is required under typical 20 A, 100 A/µs conditions. The diode's 271 ns t_rr and 3.44 µC Q_rr at 25 °C produce manageable voltage overshoot (<15% of V_DS) when paired with a 50 V/ns dv/dt-rugged MOSFET structure and proper PCB layout.

How does the 100% avalanche test impact field reliability in UPS applications?

Each unit undergoes single-pulse avalanche stress at 260 mJ, verifying capability to absorb inductive energy during output short-circuit events. In UPS inverters, this ensures survival of >10,000 fault cycles without parameter drift-validated per JEDEC JESD22-A109 and ST's internal AEC-Q101-aligned qualification.