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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW27NM60ND

Name: STW27NM60ND
Brand: STMicroelectronics
SKU: STW27NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW27NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW27NM60ND.pdf

Description:: MOSFET N-CH 600V 21A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,043

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Product details

Overview

STW27NM60ND from STMicroelectronics is a 600 V, 27 A, N-channel Power MOSFET in TO-247 package, designed for high-voltage switching applications including SMPS, PFC stages, and motor drives. It features 0.15 Ω R_DS(on) (max), 100% avalanche-rated ruggedness, and enhanced dv/dt immunity for reliable operation in harsh industrial environments.

For engineers reviewing the STW27NM60ND datasheet, STW27NM60ND pinout, STW27NM60ND application, or STW27NM60ND equivalent, key selection criteria include breakdown voltage rating, conduction loss at 25 °C and 100 °C, gate charge (Q_g = 65 nC), thermal resistance (R_thJC = 0.65 °C/W), and avalanche energy capability (E_AS = 490 mJ).

Technical Context

This device employs ST's proprietary MDmesh™ II superjunction technology to achieve low on-resistance while maintaining high voltage blocking capability. Its optimized gate structure reduces switching losses and improves controllability under fast-switching conditions up to 100 kHz.

The MOSFET supports hard-switched topologies with full rated current at T_C ≤ 100 °C and operates with gate threshold voltage V_GS(th) of 2–4 V, enabling direct drive from standard 15 V gate drivers without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Sustains full line voltage in universal-input offline SMPS and industrial AC-DC converters.
I_D (T_C = 25 °C)	27 A - Continuous drain current rating at case temperature 25 °C; derates to 18 A at 100 °C.
R_DS(on) (max)	0.15 Ω - Low conduction loss enables <1.2 W dissipation at 10 A, reducing heatsink requirements.
Q_g	65 nC - Gate charge determines driver power and switching speed; compatible with common 1-A peak gate drivers.
E_AS	490 mJ - Fully rated single-pulse avalanche energy ensures robustness against inductive load transients.
R_thJC	0.65 °C/W - Junction-to-case thermal resistance allows efficient heat transfer to heatsink in TO-247 mounting.

Pinout & Package

Package: TO-247 (3-pin, straight lead, isolated tab). Standard through-hole mounting with electrically isolated drain-connected tab for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically isolated metal tab serves as primary drain connection and thermal interface to heatsink.
Gate	Control input	Low-impedance MOS gate requiring 10–15 V drive; sensitive to ESD; must be actively pulled low during off-state.
Source	Reference node	Return path for load current; defines ground reference for gate drive; connected to PCB source trace or Kelvin sense point.

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees single-pulse avalanche energy handling up to 490 mJ without degradation-critical for flyback and resonant converter reliability.
Enhanced dv/dt Immunity	Rated for 4.5 V/ns - prevents spurious turn-on in high-noise industrial motor drive and welding inverter environments.
Low Gate Charge	Q_g = 65 nC - reduces gate driver power consumption and enables higher-frequency operation with lower switching losses.
Optimized Body Diode	t_rr = 220 ns, Q_rr = 3.5 µC - minimizes reverse recovery losses in synchronous rectification and LLC resonant topologies.

Applications

Industrial Switch-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: 1–3 kW universal-input AC-DC power supplies for PLCs, HMIs, and industrial controllers.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost PFC and forward/flyback DC-DC stages.

Use Value: 0.15 Ω R_DS(on) and 600 V rating enable >94% efficiency at full load while meeting EN 61000-3-2 harmonic limits.

Use Scenario: Boost-type active PFC stage in telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: High-side switching element operating at 65–100 kHz with sinusoidal input current shaping.

Use Value: Low Q_g and fast body diode reduce switching and conduction losses, improving THD and thermal margin.

Motor Drive Inverters

Induction Heating Systems

Use Scenario: 3-phase IGBT/MOSFET inverter modules for HVAC compressors and pump drives (0.75–2.2 kW).

IC Role / Device Role / Timing Role: Upper-leg switch in 6-step or SVM-driven bridge configuration with bootstrap gate drive.

Use Value: Avalanche ruggedness and dv/dt immunity prevent shoot-through failures during bus transients and load disconnection events.

Use Scenario: Half-bridge resonant inverter in domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: High-frequency (20–100 kHz) switching device in ZVS-controlled series-resonant tank.

Use Value: Optimized body diode recovery (t_rr = 220 ns) minimizes switching node ringing and EMI generation during zero-voltage transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 0.19 Ω R_DS(on), 48 nC Q_g, TO-220FP package	Lower gate charge but higher R_DS(on); limited to ≤15 A continuous due to smaller package thermal performance	Preferred for space-constrained designs where gate drive power is critical and current demand is ≤15 A.
STP24NM60N	600 V, 0.22 Ω R_DS(on), 55 nC Q_g, TO-220 package	Same voltage rating but higher on-resistance and lower current rating (24 A); no avalanche rating specified	Suitable for cost-sensitive, lower-power (<1.5 kW) applications where avalanche robustness is not required.

Compared with IPP60R190C7 and STP24NM60N, STW27NM60ND delivers superior thermal performance via TO-247 packaging, higher current capability, and guaranteed avalanche energy-making it the preferred choice for industrial-grade 2–3 kW power conversion where reliability under transient stress is mandatory.

Availability

STW27NM60ND is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC front-ends, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW27NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STW27NM60ND belongs to ST's MDmesh™ II high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and infrastructure applications.

FAQ

What is the maximum junction temperature for continuous operation?

The STW27NM60ND has a maximum rated junction temperature of 150 °C. For continuous operation at full 27 A drain current, the case temperature must be maintained at or below 100 °C per the Safe Operating Area (SOA) curve. Derating is required above this temperature, with linear reduction to zero current at 150 °C junction.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The STW27NM60ND has a gate threshold voltage range of 2–4 V and is fully enhanced with 0 V gate-source bias. A gate drive of 0 V (or slight negative bias up to –5 V) ensures safe turn-off; however, negative bias is not required for normal operation and adds complexity without benefit in most industrial applications.

Can STW27NM60ND be used in parallel configurations?

Yes, but only with careful attention to gate drive layout, current-sharing resistors, and thermal coupling. The device exhibits positive temperature coefficient for R_DS(on), supporting inherent current sharing. However, mismatched gate loop inductance or thermal gradients can cause imbalance; use matched gate resistors (≤5 Ω) and symmetrical PCB routing for reliable paralleling.

Is the TO-247 package electrically isolated?

Yes-the TO-247 package used for STW27NM60ND features an electrically isolated metal tab. The drain is connected to the tab, but the tab is insulated from the mounting surface by default. When mounted to a heatsink, an insulating pad or washer must be used unless the heatsink is floating or intentionally tied to drain potential.

STW27NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW27NM60ND FAQ

1.How can I place an order for STW27NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW27NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW27NM60ND reliable?

The price and inventory of STW27NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW27NM60ND is usually 5 days.

3.What payment methods are accepted for STW27NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW27NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW27NM60ND?

STW27NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW27NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW27NM60ND?

For technical support, including STW27NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW27NM60ND requirements.

6.How does Aetrix verify that STW27NM60ND is sourced from the original manufacturer or authorized distributors?

All STW27NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW27NM60ND meets industry standards.

7.What is the process for return or replacement of STW27NM60ND?

All STW27NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW27NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW27NM60ND part is unused and in its original packaging.

Return procedure for STW27NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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