STMicroelectronics STW28N60DM2

Overview

STW28N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in TO-247 package, designed for high-efficiency switching converters. It features 600 V V_(BR)DSS, 0.13 Ω typ. R_DS(on) at V_GS = 10 V and I_D = 10.5 A, 140 ns trr (T_j = 25 °C), and Zener-protected gate. It is used in phase-shifted ZVS bridge topologies requiring fast-recovery body diode performance.

For engineers reviewing the STW28N60DM2 datasheet, STW28N60DM2 pinout, STW28N60DM2 application, or STW28N60DM2 equivalent, key selection criteria include avalanche ruggedness (350 mJ E_AS), dv/dt immunity (50 V/ns), low Q_rr (0.5 µC), thermal resistance (R_thj-case = 0.74 °C/W), and MDmesh™ DM2 fast-recovery diode integration.

Technical Context

This device implements ST's MDmesh™ DM2 technology, combining ultra-low R_DS(on) with optimized charge dynamics: Q_g = 34 nC, Q_gd = 18.5 nC, and C_iss = 1500 pF at V_DS = 100 V. Its fast-recovery body diode achieves t_rr = 140 ns and Q_rr = 0.5 µC under standard test conditions (I_SD = 21 A, di/dt = 100 A/µs).

The integrated back-to-back gate-source Zener diodes provide ±30 V breakdown protection, eliminating external clamping components. Thermal design is enabled by R_thj-case = 0.74 °C/W and rated P_TOT = 170 W at T_case = 25 °C - validated across full junction temperature range (–55 to 150 °C).

Key Specifications

Pinout & Package

STW28N60DM2 uses the TO-247 package: three-terminal through-hole outline with isolated tab (drain-connected), standardized mechanical dimensions per Table 13 (A = 4.85–5.15 mm, D = 19.85–20.15 mm, E = 15.45–15.75 mm, L = 14.20–14.80 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXFH28N60P and IPP60R099C7, STW28N60DM2 delivers balanced trade-offs: lower Q_rr than IXFH28N60P (0.5 vs 1.1 µC), higher V_(BR)DSS stability over temperature than IPP60R099C7, and built-in Zener protection absent in both alternatives - making it optimal for industrial-grade, thermally constrained, and layout-sensitive designs.

Availability

STW28N60DM2 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW28N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STW28N60DM2 belongs to the MDmesh™ DM2 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching converters where fast-recovery diode performance and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW28N60DM2 supports 14 A continuous drain current at T_case = 100 °C, as specified in Table 2 (Electrical ratings). This rating reflects thermal derating due to reduced heat dissipation capability at elevated temperatures and must be applied with appropriate heatsinking to maintain junction temperature below 150 °C.

Does STW28N60DM2 require an external gate resistor for safe operation?

Yes - ST recommends a gate series resistor of ≤4.7 Ω to control dV/dt and suppress oscillation, especially given its low intrinsic gate resistance (R_G = 4.6 Ω) and high-speed switching capability. The resistor value must be selected based on driver strength, layout inductance, and required turn-on/turn-off times to avoid overshoot or shoot-through.

How does the Zener-protected gate affect PCB layout requirements?

The integrated ±30 V gate-source Zener diodes eliminate the need for discrete TVS devices, allowing simplified gate driver traces without additional clamping components. However, layout must still minimize loop inductance between gate driver output, gate resistor, and gate pin to prevent voltage spikes exceeding the Zener rating during fast edge transitions.

Can STW28N60DM2 replace STP28N60DM2 in existing TO-220 designs?

No - STW28N60DM2 uses TO-247 packaging with different mechanical footprint, mounting hole pattern, and thermal interface geometry versus TO-220. Direct replacement requires board redesign, heatsink adaptation, and revalidation of thermal performance, as R_thj-case differs (0.74 °C/W for TO-247 vs 0.95 °C/W for TO-220 per Table 3).