STMicroelectronics STW28N60M2

Overview

STW28N60M2 from STMicroelectronics is an N-channel 600 V, 135 mΩ typ. (150 mΩ max), 22 A Power MOSFET in TO-247 package, built on MDmesh M2 technology for high-efficiency switching converters. It features 36 nC total gate charge, 70 pF output capacitance, and 100% avalanche tested ruggedness - deployed in industrial SMPS and PFC stages where high-voltage hard-switching and thermal reliability are critical.

For engineers reviewing the STW28N60M2 datasheet, STW28N60M2 pinout, STW28N60M2 application, or STW28N60M2 equivalent, key selection factors include its 50 V/ns MOSFET dv/dt ruggedness, 350 mJ single-pulse avalanche energy, Zener-protected gate, and optimized Coss profile for reduced switching loss in continuous conduction mode (CCM) boost PFC.

Technical Context

This device uses ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining high voltage blocking. Its 135 mΩ typical on-resistance at V_GS = 10 V and 11 A enables low conduction loss in high-power AC-DC front-ends.

The MOSFET integrates a fast-recovery body diode with 350 ns reverse recovery time (T_J = 25 °C) and 4.7 µC Q_rr, supporting ZVS-capable topologies. Gate threshold voltage (2–4 V) and 5.5 Ω intrinsic gate resistance support robust drive design with standard gate drivers.

Key Specifications

Pinout & Package

STW28N60M2 is housed in a TO-247 package with isolated tab (drain-connected), offering low 0.74 °C/W junction-to-case thermal resistance for direct heatsink mounting. The package complies with ECOPACK environmental standards and supports high-power density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP28N60M2, STW28N60M2 delivers 2.5× higher thermal power handling via TO-247; versus IPP60R190C7, it trades 55 mΩ higher R_DS(on) for guaranteed avalanche survival and gate Zener integration - critical for industrial PFC reliability.

Availability

STW28N60M2 is available at Aetrix Electronics and suitable for industrial SMPS, solar microinverters, UPS inverters, and PFC boost stages requiring stable component supply across multi-year production cycles.

Supply support for STW28N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC conversion in industrial power supplies and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW28N60M2 supports 14 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9931 Rev 5. This derating reflects thermal limits of the TO-247 package under real-world heatsink conditions and must be validated against actual PCB layout and airflow.

Does STW28N60M2 include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source, rated for ±25 V, providing inherent protection against gate oxide breakdown from ESD events or gate driver overshoot. This eliminates the need for external gate clamping components in most industrial designs.

Can STW28N60M2 replace STP28N60M2 in existing TO-220 designs?

No - STW28N60M2 uses a TO-247 package with different footprint, mounting hole pattern, and thermal interface requirements. Direct replacement requires mechanical redesign, though electrical characteristics (V_DS, R_DS(on), Q_g) are identical due to shared MDmesh M2 die.

What is the safe operating area (SOA) limitation at 10 µs pulse width?

At 10 µs pulse width and T_J = 150 °C, the SOA is limited by maximum R_DS(on) to 100 A at 10 V V_DS, per Figure 3 in DS9931 Rev 5. This defines the upper boundary for short-circuit withstand capability in hard-switched bridge legs.