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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW28N65M2

Name: STW28N65M2
Brand: STMicroelectronics
SKU: STW28N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW28N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW28N65M2.pdf

Description:: MOSFET N-CH 650V 20A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:9,379

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Product details

Overview

STW28N65M2 from STMicroelectronics is an N-channel 650 V, 150 mΩ typ. (180 mΩ max.), 20 A Power MOSFET in TO-247 package, built on MDmesh M2 technology. It delivers low gate charge (35 nC), optimized Coss profile (60 pF), and 100% avalanche tested ruggedness for high-efficiency hard-switched PFC and LLC resonant converters in industrial SMPS.

For engineers reviewing the STW28N65M2 datasheet, STW28N65M2 pinout, STW28N65M2 application, or STW28N65M2 equivalent, key selection criteria include RDS(on) at 10 V, dv/dt ruggedness (50 V/ns), SOA limits at TC = 100 °C, and Zener-protected gate reliability in high-noise power stages.

Technical Context

This device employs a strip-layout MDmesh M2 vertical structure to minimize conduction loss while maintaining fast switching with low Qgd (15 nC) and Crss (2 pF). Its 150 mΩ typical RDS(on) and 307 pF Coss_eq enable high-frequency operation up to 300 kHz in continuous conduction mode.

The integrated Zener-protected gate withstands ±25 V transient stress, and its 50 V/ns MOSFET dv/dt ruggedness ensures reliable commutation under high di/dt conditions without spurious turn-on in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V AC input rectified systems with 30% margin for voltage spikes in industrial PFC stages.
R_DS(on) max	180 mΩ @ V_GS = 10 V, I_D = 10 A - Enables <1.8 W conduction loss at 10 A, critical for thermal management in sealed enclosures.
Q_g	35 nC - Reduces gate drive power requirement and allows use of lower-cost 1-A peak gate drivers in 100–300 kHz designs.
C_oss	60 pF @ V_DS = 100 V - Low output capacitance minimizes turn-off energy loss (E_oss = 6 µJ at 520 V), improving light-load efficiency.
E_AS	760 mJ - Withstands single-pulse unclamped inductive energy in flyback or forward converters without failure.
T_J max	150 °C - Allows full-rated 20 A operation at case temperatures up to 100 °C with derating, supporting compact heatsink designs.
R_thJC	0.74 °C/W - Enables direct mounting to heatsinks with minimal thermal interface resistance for high-power density layouts.

Pinout & Package

STW28N65M2 uses the TO-247 package with isolated tab (drain-connected), standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Low-impedance control input requiring ≤10 V drive; internal Zener clamps transients to ±25 V.
Pin 2 (D / Tab)	Drain connection (metal tab)	Electrically connected to drain; must be insulated from heatsink unless system ground-referenced drain topology is used.
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current and reverse recovery current during freewheeling.

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior-generation 650 V MOSFETs, enabling higher frequency operation.
Zener-protected gate	Integrated bidirectional 25 V Zener prevents gate oxide damage during ESD events or gate driver faults without external components.
100% avalanche tested	Every unit validated for single-pulse avalanche capability at I_AR = 2.4 A and E_AS = 760 mJ, ensuring robustness in overvoltage fault conditions.
Optimized C_oss profile	C_oss remains stable across 0–520 V, reducing turn-off loss variation and simplifying snubber design in resonant topologies.
Low Q_gd/Q_g ratio	43% (15 nC / 35 nC) - Minimizes Miller-induced voltage overshoot and improves noise immunity during high-dv/dt switching.

Applications

Industrial PFC Boost Stage

Server PSU LLC Resonant Converter

Use Scenario: 3.5 kW active front-end with 96% efficiency target operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost stage; handles full line current with zero-voltage switching assistance.

Use Value: 150 mΩ R_DS(on) and 35 nC Q_g reduce total switching + conduction losses below 22 W at 20 A, enabling passive cooling.

Use Scenario: Primary-side switch in half-bridge LLC resonant converter powering 12 V/200 A server VRMs.

IC Role / Device Role / Timing Role: High-side and low-side switching element; operates in soft-switching region with body diode conduction during dead time.

Use Value: 384 ns trr and 5.7 µC Q_rr at 25 °C limit reverse recovery loss and EMI generation during ZVS transitions.

Solar Microinverter DC-DC Stage

EV Onboard Charger AC-DC Front End

Use Scenario: Isolated DC-DC stage stepping up PV string voltage (60–150 V) to 400 V bus with >98% peak efficiency.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology; subjected to repetitive 500 V+ blocking and 20 A peak currents.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during rapid bus voltage transitions in high-EMI solar environments.

Use Scenario: 6.6 kW single-phase OBC with universal AC input (90–264 VAC) and 450 V DC bus.

IC Role / Device Role / Timing Role: Switch in interleaved PFC stage; conducts 20 A RMS with 80 A pulsed current during surge events.

Use Value: 80 A I_DM rating and 170 W P_TOT at T_C = 25 °C support high-duty-cycle operation without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP28N65M2	Same die, TO-220 package; R_thJC = 0.74 °C/W but R_thJA = 50 °C/W (vs. 0.74 °C/W for STW28N65M2); no isolated tab.	Limited to <12 A continuous current in open-frame designs due to higher junction-to-ambient thermal resistance.	Select when cost-sensitive, lower-power (<1.5 kW), or space-constrained PCB-mount applications eliminate need for heatsink isolation.
IPP65R190C7	650 V, 190 mΩ, 21 A CoolMOS™ C7; Q_g = 32 nC but C_oss = 85 pF; no integrated Zener protection.	Higher C_oss increases turn-off loss in hard-switched PFC; requires external gate Zener for robustness.	Prefer where ultra-low Q_g dominates over avalanche ruggedness, and gate protection is implemented externally.

Compared with STP28N65M2, STW28N65M2 enables 20 A continuous operation with direct heatsink mounting and superior thermal performance; versus IPP65R190C7, it trades slightly higher R_DS(on) for guaranteed avalanche survival and integrated gate protection in uncontrolled line environments.

Availability

STW28N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, solar microinverters, and EV onboard chargers requiring stable component supply with long-term manufacturing continuity.

Supply support for STW28N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STW28N65M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating above 400 V DC bus voltages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW28N65M2 supports 13 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10760. This derating reflects thermal limits of the TO-247 package and ensures safe operation within the SOA boundary at elevated ambient temperatures.

Does STW28N65M2 require an external gate resistor for stability?

Yes - a minimum 4.7 Ω gate resistor is recommended per Figure 17 test circuit in DS10760 to dampen ringing and prevent oscillation during switching. Lower values risk shoot-through in bridge configurations; higher values increase switching losses without improving reliability.

Is the TO-247 tab electrically isolated from the package leads?

No - the metal tab is internally connected to the drain (Pin 2) and is not electrically isolated. When mounted to a heatsink, insulation (e.g., mica washer + thermal paste) is mandatory unless the heatsink is referenced to the drain potential in the system design.

How does the 100% avalanche testing impact field reliability?

Each STW28N65M2 undergoes single-pulse avalanche stress at I_AR = 2.4 A and E_AS = 760 mJ, verifying robustness against transient overvoltage events like lightning surges or inductive kickback - a key differentiator for industrial-grade power supplies demanding >10-year MTBF.

STW28N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW28N65M2 FAQ

1.How can I place an order for STW28N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW28N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW28N65M2 reliable?

The price and inventory of STW28N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW28N65M2 is usually 5 days.

3.What payment methods are accepted for STW28N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW28N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW28N65M2?

STW28N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW28N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW28N65M2?

For technical support, including STW28N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW28N65M2 requirements.

6.How does Aetrix verify that STW28N65M2 is sourced from the original manufacturer or authorized distributors?

All STW28N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW28N65M2 meets industry standards.

7.What is the process for return or replacement of STW28N65M2?

All STW28N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STW28N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW28N65M2 part is unused and in its original packaging.

Return procedure for STW28N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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