STMicroelectronics STW28NM50N

Overview

STW28NM50N from STMicroelectronics is an N-channel 500 V, 135 mΩ typ. (158 mΩ max), 21 A MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency hard-switched and resonant power converters. It delivers low gate charge (50 nC), low input capacitance (1735 pF), and 100% avalanche-tested ruggedness, enabling use in industrial SMPS, solar inverters, and UPS systems where high voltage blocking and fast switching are critical.

For engineers reviewing the STW28NM50N datasheet, STW28NM50N pinout, STW28NM50N application, or STW28NM50N equivalent, key selection criteria include its 500 V V_DS, 135 mΩ R_DS(on) at 10 V_GS, 50 nC total gate charge, 150 W P_TOT at T_C = 25 °C, and TO-247 thermal resistance of 0.83 °C/W (R_thJC), all verified per DS6813 Rev 3.

Technical Context

This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 1735 pF C_iss, 4.3 pF Crss, and 50 nC Q_g support high-frequency operation up to 100 kHz in LLC and phase-shifted full-bridge topologies.

The integrated body diode features 326 ns t_rr and 5 µC Q_rr at 25 °C (376 ns / 6.2 µC at 150 °C), enabling reliable operation in synchronous rectification and freewheeling roles without external Schottky supplementation in medium-power designs.

Key Specifications

Pinout & Package

STW28NM50N uses the TO-247 package - a through-hole, isolated-tab power package with industry-standard mounting and thermal interface compatibility. The tab is electrically connected to the drain (D), enabling direct heatsink attachment with electrical isolation via insulating pads or mica washers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW28NM50N, STP28NM50N trades package isolation and power handling for lower cost and footprint, while IPP60R190C7 offers higher voltage margin and lower gate drive demand at the expense of conduction efficiency and avalanche ruggedness in 400–450 V systems.

Availability

STW28NM50N is available at Aetrix Electronics and suitable for industrial SMPS, solar DC optimizers, UPS inverters, and HVAC motor drives requiring stable component supply across multi-year production cycles.

Supply support for STW28NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs, with manufacturing in Europe and Asia.

STW28NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial and renewable energy power conversion systems operating at 400–500 V DC bus levels.

FAQ

What is the maximum continuous drain current for STW28NM50N at 100 °C case temperature?

The maximum continuous drain current is 13 A when the case temperature (T_C) is maintained at 100 °C, as specified in Table 1 of DS6813 Rev 3. This rating is thermally limited by the 150 °C maximum junction temperature and the TO-247 package's 0.83 °C/W R_thJC. Operation above this current requires active cooling or derating to ensure TJ ≤ 150 °C.

Does STW28NM50N have an integrated body diode, and what are its key recovery parameters?

Yes, STW28NM50N includes a monolithic source-drain body diode. At T_J = 25 °C, it exhibits 326 ns reverse recovery time (t_rr), 5 µC reverse recovery charge (Q_rr), and 30 A peak reverse recovery current (I_RRM) under ISD = 21 A, di/dt = 100 A/µs, and VDD = 400 V conditions. These values increase to 376 ns and 6.2 µC at 150 °C junction temperature.

Can STW28NM50N be used in avalanche mode, and what is its rated single-pulse energy?

Yes - STW28NM50N is 100% production-tested for avalanche capability. Its single-pulse avalanche energy (E_AS) is rated at 300 mJ when starting from T_J = 25 °C, with I_AR = 7.5 A and V_DD = 50 V. This enables robust operation during unclamped inductive switching events common in PFC and motor drive circuits without external protection.

What is the gate threshold voltage range, and how does it vary with temperature?

The gate threshold voltage (V_GS(th)) is specified from 2 V (min) to 4 V (max) at 25 °C, with typical value of 3 V. As shown in Figure 13 of DS6813 Rev 3, V_GS(th) decreases with rising temperature - normalized to ~0.8× at 150 °C - ensuring predictable turn-on behavior across the full –55 °C to 150 °C operating range without thermal runaway.