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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW28NM60ND

Name: STW28NM60ND
Brand: STMicroelectronics
SKU: STW28NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW28NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW28NM60ND.pdf

Description:: MOSFET N-CH 600V 23A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW28NM60ND from STMicroelectronics is an N-channel 600 V, 23 A FDmesh™ II Power MOSFET in TO-247 package, featuring 0.13 Ω typ. R_DS(on), intrinsic fast-recovery body diode, and 450 mJ single-pulse avalanche energy. It delivers high dv/dt immunity (45 V/ns), low gate charge (62.5 nC), and is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS.

For engineers reviewing the STW28NM60ND datasheet, STW28NM60ND pinout, STW28NM60ND application, or STW28NM60ND equivalent, key selection criteria include its 600 V V_DS, 23 A continuous drain current at T_C = 25 °C, 0.66 °C/W junction-to-case thermal resistance, and robust 100% avalanche-tested ruggedness under unclamped inductive switching.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip layout to achieve ultra-low on-resistance and superior switching performance. Its intrinsic fast-recovery body diode enables reliable operation in hard-switched and resonant topologies without external diode supplementation.

The device supports high-speed switching with 23.5 ns turn-on delay, 27 ns fall time, and low Crss (5.5 pF), minimizing Miller-induced shoot-through risk. Its 4.7 Ω gate input resistance and 2090 pF Ciss ensure stable gate drive compatibility with standard PWM controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 600 V in offline SMPS and PFC stages.
R_DS(on) typ.	0.13 Ω @ V_GS = 10 V, I_D = 11.5 A - Enables <1.5 W conduction loss at 23 A, reducing heatsink requirements.
I_D cont.	23 A @ T_C = 25 °C - Supports high-current output stages in 1–3 kW industrial power supplies.
E_AS	450 mJ - Sustains single-pulse unclamped inductive energy without failure, critical for ZVS/ZCS reliability.
dv/dt	45 V/ns - Resists false triggering during fast voltage transients in high-frequency bridge operation.
Q_g	62.5 nC - Matches standard gate drivers (e.g., IR2110, UCC27531) without excessive drive power overhead.
R_thj-case	0.66 °C/W - Enables efficient heat transfer to heatsink, supporting >150 W dissipation at ΔT = 100 °C.

Pinout & Package

STW28NM60ND is housed in a TO-247 package with isolated tab (drain-connected). The package provides high thermal conductivity and mechanical robustness for high-power mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; low 4.7 Ω input resistance simplifies RC snubber design.
2 (Drain)	High-side power switch node	Connected to internal die backside; tab is electrically tied to drain-requires isolation from heatsink unless floating.
3 (Source)	Power return and reference	Serves as local ground reference for gate driver; low-inductance source loop essential for EMI control.

Key Features

Feature	Design Value
Intrinsic fast-recovery body diode	trr = 170 ns @ I_SD = 23 A, di/dt = 100 A/μs - Eliminates need for external anti-parallel diode in synchronous rectification and LLC half-bridge.
100% avalanche tested	Rated for repetitive and non-repetitive avalanche events up to 5 A - Ensures field reliability in overvoltage fault conditions.
Low gate charge & capacitance	Q_g = 62.5 nC, C_iss = 2090 pF - Reduces switching losses and gate driver stress in 100–300 kHz designs.
High dv/dt immunity	45 V/ns - Prevents spurious turn-on during high dV/dt commutation in full-bridge inverters and motor drives.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions - Suitable for green industrial equipment.

Applications

Industrial SMPS

ZVS Phase-Shift Converter

Use Scenario: Primary-side switching in 2–3 kW telecom rectifiers and server PSUs operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side N-channel switch in full-bridge topology; handles 600 V DC bus with zero-voltage switching transitions.

Use Value: Low R_DS(on) and fast body diode reduce conduction and recovery losses, improving efficiency by ≥0.8% vs. legacy 650 V MOSFETs.

Use Scenario: Lagging-leg switching in isolated DC-DC modules for data center power distribution.

IC Role / Device Role / Timing Role: Active clamp-assisted lagging-leg MOSFET; leverages intrinsic diode for soft turn-on during ZVS window.

Use Value: 170 ns trr and 1160 nC Q_rr minimize dead-time penalty and circulating current, enabling >96% peak efficiency.

Motor Drive Inverter

UPS Output Stage

Use Scenario: 3-phase inverter stage in HVAC compressors and industrial pumps rated ≤5 HP.

IC Role / Device Role / Timing Role: Upper-leg switch in IGBT-like half-bridge configuration; withstands motor back-EMF spikes and regenerative currents.

Use Value: 450 mJ E_AS and 92 A pulsed current rating prevent failure during motor stall or short-circuit events.

Use Scenario: Online double-conversion UPS output H-bridge delivering clean 230 VAC sine wave.

IC Role / Device Role / Timing Role: High-frequency PWM switch in transformerless output stage; operates with active harmonic cancellation.

Use Value: 0.66 °C/W R_thj-case allows sustained 23 A operation with passive heatsinking, reducing fan dependency and acoustic noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH24N60P	600 V, 24 A, R_DS(on) = 0.14 Ω, Q_g = 72 nC, TO-247	Higher gate charge increases driver loss; slower trr (220 ns) limits ZVS frequency ceiling.	Preferred where higher avalanche margin (E_AS = 520 mJ) outweighs switching speed trade-off.
IPP60R099C7	650 V, 25 A, R_DS(on) = 0.099 Ω, Q_g = 58 nC, TO-247 - CoolMOS™ C7	Lower R_DS(on) but no intrinsic fast diode; requires external SiC Schottky for hard switching.	Optimal for high-efficiency PFC where diode recovery is managed externally and conduction loss dominates.

Compared with IXFH24N60P and IPP60R099C7, STW28NM60ND uniquely balances low R_DS(on), integrated fast diode, and proven avalanche ruggedness-making it the preferred choice for cost-sensitive, thermally constrained ZVS converters requiring no external diode.

Availability

STW28NM60ND is available at Aetrix Electronics and suitable for industrial SMPS, ZVS phase-shift converters, motor drive inverters, and UPS output stages requiring stable component supply across multi-year production cycles.

Supply support for STW28NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications.

STW28NM60ND belongs to the FDmesh™ II Power MOSFET product line, developed specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure.

FAQ

Is STW28NM60ND suitable for use in automotive applications?

No. STW28NM60ND is not qualified for automotive use. ST explicitly states in its datasheet that its products are not designed or authorized for safety-critical, automotive, or aerospace applications unless expressly designated as such. This part lacks AEC-Q101 qualification and has no automotive-grade screening or extended temperature validation beyond 150 °C junction limit.

What is the maximum safe operating area (SOA) for STW28NM60ND at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 14.5 A (Table 2), and the SOA is bounded by R_DS(on) limit and thermal constraints. Figure 6 confirms single-pulse operation up to 10 A at 100 V and 1 ms pulse width, with strict adherence to the 0.66 °C/W R_thj-case limit to avoid exceeding 150 °C junction temperature.

Does STW28NM60ND require a negative gate voltage for reliable turn-off?

No. STW28NM60ND has a gate threshold voltage of 3–5 V and is fully enhanced at V_GS = 10 V. While −5 V to 0 V gate bias improves noise immunity, the datasheet specifies only ±25 V absolute maximum V_GS and does not mandate negative turn-off. Standard 0 V to 10 V gate drive suffices for most industrial applications.

Can STW28NM60ND be paralleled with identical units for higher current handling?

Yes, but with strict layout and gate drive matching. The device exhibits positive temperature coefficient for R_DS(on) (Figure 15), enabling inherent current sharing. Successful paralleling requires identical PCB trace lengths, Kelvin-source connections, individual gate resistors (≤4.7 Ω), and symmetrical thermal mounting to maintain ΔT < 5 °C between devices.

STW28NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2090 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW28NM60ND FAQ

1.How can I place an order for STW28NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW28NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW28NM60ND reliable?

The price and inventory of STW28NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW28NM60ND is usually 5 days.

3.What payment methods are accepted for STW28NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW28NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW28NM60ND?

STW28NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW28NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW28NM60ND?

For technical support, including STW28NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW28NM60ND requirements.

6.How does Aetrix verify that STW28NM60ND is sourced from the original manufacturer or authorized distributors?

All STW28NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW28NM60ND meets industry standards.

7.What is the process for return or replacement of STW28NM60ND?

All STW28NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW28NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW28NM60ND part is unused and in its original packaging.

Return procedure for STW28NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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