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STMicroelectronics STW29NK50ZD
- Part No.:
- STW29NK50ZD
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW29NK50ZD.pdf
- Description:
- MOSFET N-CH 500V 29A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,978
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Product details
Overview
STW29NK50ZD from STMicroelectronics is an N-channel 500 V, 29 A, 0.095 Ω RDS(on) SuperMESH™ power MOSFET with integrated fast body-diode and gate-source Zener protection, designed for high-efficiency, high-voltage switching in resonant and phase-shifted topologies such as HID ballasts and ZVS full-bridge converters.
For engineers reviewing the STW29NK50ZD datasheet, STW29NK50ZD pinout, STW29NK50ZD application, or STW29NK50ZD equivalent, key selection criteria include its 4.5 V/ns dv/dt capability, 264 ns reverse recovery time at 25°C, 100% avalanche tested ruggedness, low 180 nC total gate charge, and TO-247 thermal resistance of 0.36 °C/W.
Technical Context
This device implements ST's Fast SuperMESH™ process, combining reduced on-resistance with optimized intrinsic capacitances (Ciss = 6450 pF, Crss = 165 pF) and minimized gate charge to enable high-frequency ZVS operation. Its internal fast-recovery body diode (trr = 264 ns @ 25°C, Qrr = 2.08 µC) eliminates need for external anti-parallel diodes in bridge-leg configurations.
The integrated back-to-back gate-source Zener diodes (VZ = 30 V) provide robust ±6000 V HBM ESD protection and transient clamping without external components, while the 500 V VDSS rating and 100% unclamped inductive avalanche testing (EAS = 500 mJ) ensure reliability under hard-switching stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - supports primary-side switching in 400 V DC bus applications like industrial SMPS and HID ballasts |
| RDS(on) | 0.095 Ω (typ) - enables <1.4 W conduction loss at 14.5 A, critical for thermal management in sealed enclosures |
| ID (TC = 25°C) | 29 A - rated continuous drain current allowing high-power output without forced air cooling |
| trr | 264 ns (25°C) - fast body-diode recovery minimizes switching losses and voltage spikes in phase-shifted full-bridge circuits |
| Qg | 180 nC - low total gate charge reduces driver power requirement and enables efficient 100–300 kHz operation |
| dv/dt | 4.5 V/ns - high immunity to parasitic turn-on during high-slew-rate transitions in ZVS topologies |
| Rth(j-c) | 0.36 °C/W - enables 350 W dissipation with modest heatsinking, supporting compact thermal design |
Pinout & Package
STW29NK50ZD is housed in a through-hole TO-247 package with isolated tab (drain-connected), offering high thermal conductivity and mechanical robustness for industrial power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives PWM signal; requires ≤±30 V drive; protected by integrated 30 V Zener diodes |
| 2 (Drain) | High-side power output | Connected to TO-247 metal tab; carries full load current and withstands 500 V blocking |
| 3 (Source) | Power return / reference | Common node for gate drive return and current sensing; low-inductance layout essential for dv/dt stability |
Key Features
| Feature | Design Value |
|---|---|
| Fast internal body-diode recovery | trr = 264 ns @ 25°C enables ZVS operation without external diode in full-bridge legs |
| Integrated gate-source Zener protection | ±30 V breakdown with 6000 V HBM ESD rating eliminates need for external TVS/clamp components |
| 100% unclamped avalanche tested | EAS = 500 mJ ensures reliable energy absorption during inductive switching faults |
| Low gate charge & capacitance | Qg = 180 nC, Crss = 165 pF reduce driver losses and improve switching efficiency above 100 kHz |
| High manufacturing repeatability | Consistent RDS(on) and trr across lots simplifies thermal and timing margining in production designs |
Applications
| HID Lamp Ballast | ZVS Phase-Shift Full Bridge |
|---|---|
Use Scenario: High-intensity discharge lamp ignition and regulation in commercial lighting systems requiring >100 kHz resonant control. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in half-bridge or full-bridge inverter driving resonant tank. Use Value: Fast body-diode (264 ns trr) enables zero-voltage switching during lamp warm-up, reducing EMI and improving lifetime. | Use Scenario: Telecom and server PSUs using phase-shifted full-bridge topology for 48 V input, 12 V/500 W output. IC Role / Device Role / Timing Role: Upper/lower leg switching device with synchronous rectification support via body-diode conduction. Use Value: Low RDS(on) (0.095 Ω) and high dv/dt immunity (4.5 V/ns) maintain ZVS across wide load range and prevent shoot-through. |
| Industrial Motor Drive Inverter | High-Voltage DC-DC Converter |
Use Scenario: 3-phase inverter stage in HVAC compressors operating from 380–480 V AC mains after PFC. IC Role / Device Role / Timing Role: IGBT replacement in 10–20 kHz PWM inverters where fast diode recovery improves efficiency. Use Value: Avalanche-rated ruggedness (100% tested) tolerates motor inductive kickback without snubbers or derating. | Use Scenario: Isolated 400 V to 48 V DC-DC converter in renewable energy systems (e.g., solar string inverters). IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter. Use Value: Low Coss (710 pF) and high VDSS (500 V) support soft-switching at elevated input voltages with minimal voltage stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW34NB20 | 200 V VDSS, 34 A, lower RDS(on) (0.055 Ω), no integrated fast diode | Not suitable for 400 V bus; requires external diode for bidirectional conduction | Select only for <250 V DC applications where lower conduction loss outweighs diode omission |
| IPP60R099C6 | 600 V VDSS, 0.099 Ω RDS(on), CoolMOS™ technology, higher Coss (1250 pF) | Better 600 V margin but slower dv/dt response (2.5 V/ns); not avalanche tested | Prefer for ultra-high-voltage designs where 500 V margin is insufficient, accepting trade-off in switching robustness |
Compared with STW34NB20 and IPP60R099C6, STW29NK50ZD uniquely balances 500 V rating, fast body-diode recovery, and 100% avalanche testing-making it optimal for ZVS full-bridge and HID ballast designs where both voltage margin and diode performance are critical.
Availability
STW29NK50ZD is available at Aetrix Electronics and suitable for HID ballasts, ZVS phase-shift full-bridge converters, industrial motor drives, and high-voltage DC-DC converters requiring stable component supply and long-term industrial lifecycle support.
Supply support for STW29NK50ZD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in power management, microcontrollers, and analog ICs for automotive, industrial, and consumer markets.
STW29NK50ZD belongs to the SuperMESH™ power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in resonant and soft-switching power converters operating up to 500 V.
FAQ
Is STW29NK50ZD still in active production?
No-STW29NK50ZD is marked "Obsolete Product(s)" in the official ST datasheet (Rev. 3, July 2005). It is no longer manufactured by STMicroelectronics, though limited legacy stock may be available through authorized distributors and independent suppliers with full traceability documentation.
What is the maximum safe operating temperature for STW29NK50ZD?
The absolute maximum junction temperature (Tj) is 150°C, and the storage temperature range is –55°C to +150°C. Derating begins at TC = 25°C with a factor of 2.77 W/°C; at TC = 100°C, the continuous drain current drops to 18.27 A per datasheet Table 3.
Can STW29NK50ZD replace STW20NK50Z in a ZVS full-bridge design?
Yes-STW29NK50ZD offers higher ID (29 A vs. 20 A), lower RDS(on) (0.095 Ω vs. 0.125 Ω), and identical 500 V rating and TO-247 package. Its faster trr (264 ns vs. 300 ns) improves ZVS margin, but gate charge is higher (180 nC vs. 130 nC), requiring driver verification.
Does the integrated Zener protect against negative gate transients?
Yes-the built-in back-to-back Zener diodes clamp both positive and negative gate-source voltage excursions to ±30 V, providing symmetrical protection against negative transients (e.g., Miller-induced undershoot) and positive overvoltage events without external components.
STW29NK50ZD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW29NK50ZD FAQ
1.How can I place an order for STW29NK50ZD through Aetrix?
Please submit a Request for Quotation (RFQ) for STW29NK50ZD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW29NK50ZD reliable?
The price and inventory of STW29NK50ZD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW29NK50ZD is usually 5 days.
3.What payment methods are accepted for STW29NK50ZD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW29NK50ZD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW29NK50ZD?
STW29NK50ZD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW29NK50ZD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW29NK50ZD?
For technical support, including STW29NK50ZD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW29NK50ZD requirements.
6.How does Aetrix verify that STW29NK50ZD is sourced from the original manufacturer or authorized distributors?
All STW29NK50ZD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW29NK50ZD meets industry standards.
7.What is the process for return or replacement of STW29NK50ZD?
All STW29NK50ZD units undergo pre-shipment inspection (PSI). If there is an issue with STW29NK50ZD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW29NK50ZD part is unused and in its original packaging.
Return procedure for STW29NK50ZD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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