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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW30N65M5

Name: STW30N65M5
Brand: STMicroelectronics
SKU: STW30N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW30N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW30N65M5.pdf

Description:: MOSFET N-CH 650V 22A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW30N65M5 from STMicroelectronics is an N-channel 650 V, 125 mΩ typ. (139 mΩ max), 22 A Power MOSFET in TO-247 package, based on MDmesh M5 vertical process technology. It delivers extremely low R_DS(on), high dv/dt capability (15 V/ns), and 100% avalanche tested ruggedness for high-efficiency switching in industrial SMPS, PFC stages, and motor drives.

For engineers reviewing the STW30N65M5 datasheet, STW30N65M5 pinout, STW30N65M5 application, or STW30N65M5 equivalent, this device is selected for high-voltage, high-current hard-switching topologies where conduction loss, switching energy (E_on/E_off), and diode recovery robustness (Q_rr = 6–7 µC, t_rr = 336–342 ns) are critical design constraints.

Technical Context

This MOSFET employs ST's MDmesh M5 silicon architecture-combining deep-trench vertical charge compensation with optimized cell pitch-to achieve superior R_DS(on) × Q_g figure-of-merit (125 mΩ × 64 nC = 8.0 Ω·nC). Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode exhibits fast, soft reverse recovery (t_rr ≤ 342 ns at T_J = 150 °C, I_SD = 22 A) and low stored charge (Q_rr ≤ 7 µC), reducing switching losses and EMI in bridge configurations. Thermal resistance R_thJC = 0.83 °C/W enables high-power operation with passive heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with 50 V margin for transients.
R_DS(on) max	139 mΩ at V_GS = 10 V, I_D = 11 A - Enables <1.7 W conduction loss at 14 A continuous drain current (T_C = 100 °C).
I_D cont @ T_C = 100 °C	13 A - Supports sustained 500 W output in well-heatsinked 100 kHz flyback or LLC converters.
Q_g	64 nC - Low gate charge reduces driver power demand and allows use of compact 1–2 W gate drivers.
E_AS	500 mJ - Fully rated unclamped inductive switching capability eliminates need for external snubbers in many PFC designs.
t_rr	336–342 ns - Fast, soft diode recovery minimizes voltage overshoot and cross-conduction risk in half-bridge ZVS circuits.
dv/dt rating	15 V/ns - Robust against parasitic turn-on in high-speed, high-dV/dt environments like SiC hybrid inverters.

Pinout & Package

STW30N65M5 uses a TO-247 package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 0.83 °C/W) and high creepage/clearance for 650 V isolation compliance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	High-impedance control terminal; requires 10 V drive for full enhancement; gate input resistance = 1.6 Ω (low-frequency).
2 (Lead)	Drain (D)	Main high-side power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential.
3 (Lead)	Source (S)	Power return path and gate reference; forms common node with driver ground in low-side configurations.
Tab	Drain (D)	Primary heat dissipation surface and high-current drain connection; requires insulating pad when mounted to grounded heatsink.

Key Features

Feature	Design Value
MDmesh M5 silicon technology	Enables 125 mΩ typ. R_DS(on) at 650 V - 25% lower than prior-generation MDmesh M2 devices, directly reducing conduction loss in 1–3 kW PFC stages.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 500 mJ - Eliminates need for derating in unclamped inductive load applications like motor phase-leg switching.
Low Q_gd/Q_gs ratio	Q_gd = 25 nC, Q_gs = 16 nC → ratio ≈ 1.56 - Improves Miller immunity and enables stable operation with moderate gate resistors (R_G = 4.7 Ω).
Soft-recovery body diode	Q_rr = 6–7 µC, I_RRM = 32–34 A - Reduces diode-induced voltage spikes and EMI in synchronous rectification and bridge topologies.
High dv/dt immunity	15 V/ns rated - Prevents false turn-on during fast voltage transitions in multi-level converters and SiC co-packaged modules.

Applications

Industrial Switch-Mode Power Supplies

Three-Phase Motor Drives

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, high-duty-cycle main switch handling 400 V DC bus and 22 A peak current at 100 kHz.

Use Value: Low R_DS(on) (139 mΩ max) cuts conduction loss by >30% vs. legacy 600 V MOSFETs, enabling >95% efficiency at full load.

Use Scenario: Upper-leg switch in 3 kW three-phase inverter driving induction motor with field-oriented control.

IC Role / Device Role / Timing Role: Hard-switched 650 V bridge arm switch operating at 8–16 kHz with 13 A RMS phase current.

Use Value: Avalanche ruggedness (500 mJ E_AS) and soft diode recovery (t_rr = 342 ns) suppress shoot-through risk and reduce snubber losses.

Server PSU Active PFC

Solar Inverter DC-DC Stage

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 2.5 kW server power supply.

IC Role / Device Role / Timing Role: High-current, high-voltage switch conducting 22 A peak current at 65–100 kHz with 400 V input.

Use Value: Low Q_g (64 nC) and optimized C_iss/C_oss ratio enable efficient zero-voltage transition (ZVT) assist without added complexity.

Use Scenario: Isolated DC-DC converter primary switch in string-level solar optimizer with 1000 V PV input.

IC Role / Device Role / Timing Role: 650 V-rated switch handling 14 A continuous current in phase-shifted full-bridge topology.

Use Value: 0.83 °C/W R_thJC allows direct mounting to aluminum chassis, eliminating dedicated heatsinks and reducing system BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH30N65X2	R_DS(on) = 145 mΩ (max), Q_g = 52 nC, E_AS = 420 mJ, TO-247 package	Lower gate charge but higher R_DS(on); less avalanche margin	Preferred where gate drive power is constrained but thermal headroom exists.
IPP65R190CFD7	R_DS(on) = 190 mΩ (max), Q_g = 43 nC, integrated fast diode (Q_rr = 4.2 µC), TO-220FP package	Higher R_DS(on), lower voltage rating (650 V), smaller package, better diode specs	Selected for space-constrained 1 kW designs where diode performance outweighs conduction loss.

Compared with IXTH30N65X2 and IPP65R190CFD7, STW30N65M5 offers the lowest R_DS(on) and highest E_AS among TO-247 650 V MOSFETs, making it optimal for thermally demanding, high-reliability industrial PFC and motor drive applications where conduction loss and ruggedness dominate selection criteria.

Availability

STW30N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, three-phase motor drives, server PSU active PFC, and solar inverter DC-DC stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STW30N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STW30N65M5 belongs to the MDmesh™ M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 600–650 V switching applications in industrial power conversion where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STW30N65M5 supports 13 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6070 Rev 4. This rating assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature, enabling reliable operation in enclosed industrial enclosures without forced air cooling.

Does STW30N65M5 have an integrated body diode, and what are its key recovery parameters?

Yes, STW30N65M5 features an integrated source-drain diode characterized for I_SD = 22 A (continuous) and I_SDM = 88 A (pulsed). Key recovery specs include t_rr = 336 ns (T_J = 25 °C) and 342 ns (T_J = 150 °C), Q_rr = 6–7 µC, and I_RRM = 32–34 A, measured under standardized conditions (V_DD = 60 V, dI/dt = 100 A/µs).

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is specified as 3–5 V at I_D = 250 µA. This range ensures robust turn-on with 10 V gate drive while providing sufficient margin against spurious turn-on from noise or Miller coupling. Designers should use gate drivers capable of delivering ≥12 V to guarantee full enhancement across temperature and process variation.

Is STW30N65M5 suitable for use in hard-switched totem-pole PFC circuits?

Yes - its combination of low Q_gd/Q_gs ratio (1.56), high dv/dt immunity (15 V/ns), and soft-recovery body diode makes it suitable for totem-pole PFC. However, careful gate drive layout and negative turn-off bias (–5 V) are recommended to suppress Miller-induced false turn-on during high dV/dt commutation events.

STW30N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 139mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2880 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW30N65M5 FAQ

1.How can I place an order for STW30N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW30N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW30N65M5 reliable?

The price and inventory of STW30N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW30N65M5 is usually 5 days.

3.What payment methods are accepted for STW30N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW30N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW30N65M5?

STW30N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW30N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW30N65M5?

For technical support, including STW30N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW30N65M5 requirements.

6.How does Aetrix verify that STW30N65M5 is sourced from the original manufacturer or authorized distributors?

All STW30N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW30N65M5 meets industry standards.

7.What is the process for return or replacement of STW30N65M5?

All STW30N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW30N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW30N65M5 part is unused and in its original packaging.

Return procedure for STW30N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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