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STMicroelectronics STW30N80K5

Name: STW30N80K5
Brand: STMicroelectronics
SKU: STW30N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW30N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW30N80K5.pdf

Description:: MOSFET N-CH 800V 24A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,573

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Product details

Overview

STW30N80K5 from STMicroelectronics is an 800 V, 24 A N-channel Power MOSFET in TO-247 package, fabricated with MDmesh K5 vertical structure technology. It delivers 150 mΩ typ. R_DS(on), 43 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage switching in industrial SMPS, PFC stages, and HV DC-DC converters.

For engineers reviewing the STW30N80K5 datasheet, STW30N80K5 pinout, STW30N80K5 application, or STW30N80K5 equivalent, key selection criteria include its ultra-low FoM (R_DS(on) × Q_g = 6.45 Ω·nC), Zener-protected gate, 50 V/ns dv/dt ruggedness, and 440 mJ single-pulse avalanche energy at T_J = 25 °C.

Technical Context

This MOSFET employs ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its low C_iss (1530 pF) and ultra-low Q_gd/Q_gs ratio (24.2/12.8 nC) enable fast, controllable hard-switching up to 400 V bus voltages.

The integrated body diode features 555 ns typical reverse recovery time (T_J = 25 °C) and 9.95 µC Q_rr, with robust 36 A peak I_RRM; its 1.5 V forward voltage at 24 A supports efficient synchronous rectification in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in 400 V AC-input offline SMPS and 600 V DC-link inverters
R_DS(on) max	180 mΩ - ensures ≤ 103 W conduction loss at 24 A continuous drain current (T_C = 25 °C)
Q_g	43 nC - enables efficient gate drive with <1 W average power at 100 kHz using 15 V gate swing
E_AS	440 mJ - provides unclamped inductive switching margin for motor drives and relay snubbing
dv/dt ruggedness	50 V/ns - sustains noise-immune operation in high-di/dt environments without spurious turn-on
T_J max	150 °C - allows full-rated operation in sealed industrial enclosures with limited airflow
R_thJC	0.5 °C/W - permits 250 W dissipation with ≤ 125 °C case-to-junction rise, enabling compact heatsink design

Pinout & Package

TO-247 package: isolated metal tab (Drain), 3-pin through-hole outline with 5.3 mm pitch; RoHS-compliant ECOPACK2 grade.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤ ±30 V rating; 3.5 Ω intrinsic resistance affects Miller plateau timing
2 (D, TAB)	Drain (exposed tab)	Main high-voltage power path; electrically connected to heatsink-requires isolation for floating applications
3 (S)	Source	Reference node for gate drive and current sensing; ties to PCB ground plane for low-inductance layout

Key Features

Feature	Design Value
Ultra-low gate charge	43 nC total charge enables <100 ns turn-off delay with 10 Ω gate resistor at 10 V drive
Zener-protected gate	Integrated 30 V gate oxide protection prevents ESD damage during handling and PCB assembly
100% avalanche tested	Every unit validated for 8 A repetitive avalanche current and 440 mJ single-pulse energy per JEDEC JESD24-11
Low FoM (R_DS(on) × Q_g)	6.45 Ω·nC - benchmark efficiency metric for high-frequency HV MOSFETs in telecom and server PSUs
High dv/dt immunity	50 V/ns rated slope suppresses false triggering in phase-shifted full-bridge and LLC resonant converters

Applications

Industrial Switch-Mode Power Supplies

Three-Phase Motor Drives

Use Scenario: Primary-side switch in 3 kW telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-voltage hard-switched MOSFET operating at 100 kHz with 640 V DC bus.

Use Value: 150 mΩ R_DS(on) and 43 nC Q_g reduce conduction + switching losses by 18% vs. prior-generation K3 devices.

Use Scenario: Upper-leg IGBT replacement in 7.5 kW VFD output stage driving 400 V AC induction motor.

IC Role / Device Role / Timing Role: 800 V blocking switch in three-phase inverter leg with 15 kHz PWM.

Use Value: 50 V/ns dv/dt ruggedness eliminates external Miller clamps; 100% avalanche test ensures reliability under short-circuit fault conditions.

High-Voltage DC-DC Converters

Power Factor Correction (PFC)

Use Scenario: Isolated DC-DC stage stepping 800 V DC bus down to 48 V for datacenter rack distribution.

IC Role / Device Role / Timing Role: Active clamp flyback primary switch with 600 V V_DS stress and 200 ns dead-time constraints.

Use Value: Low C_oss (145 pF) and Co(er) = 91 pF minimize energy loss during zero-voltage switching transitions.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 10 kW solar inverter.

IC Role / Device Role / Timing Role: Unidirectional high-side switch handling 24 A RMS input current at 50 kHz.

Use Value: 24 A continuous rating at T_C = 100 °C and 1.5 V body diode V_SD support high-efficiency boost operation without external freewheeling diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH30N80L	R_DS(on) = 220 mΩ, Q_g = 52 nC, no Zener gate protection	Lower switching speed; requires external gate protection circuitry	Preferred where cost sensitivity outweighs gate robustness and FoM requirements
IPP60R190C7	650 V rating, R_DS(on) = 190 mΩ, Q_g = 35 nC, CoolMOS C7 process	Not suitable for 800 V bus designs; limited to 400 V AC-input systems	Select only when system DC bus is capped at ≤ 600 V and lower gate charge is prioritized over voltage rating

Compared with IXTH30N80L and IPP60R190C7, STW30N80K5 uniquely combines 800 V rating, Zener gate protection, and industry-leading FoM-making it optimal for space-constrained, high-reliability 3–5 kW industrial power supplies where voltage margin and ruggedness are non-negotiable.

Availability

STW30N80K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, three-phase motor drives, high-voltage DC-DC converters, and active PFC stages requiring stable component supply across multi-year production cycles.

Supply support for STW30N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW30N80K5 belongs to the MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion systems operating above 600 V DC bus.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW30N80K5 supports 15 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11383 Rev 3. This derating reflects thermal limits of the TO-247 package and ensures safe operation within the SOA boundary at elevated ambient temperatures without forced cooling.

Does this MOSFET include integrated gate protection?

Yes-STW30N80K5 integrates a Zener diode between gate and source, clamping transient gate voltage to ±30 V. This protection is confirmed in the "Features" section and eliminates the need for external gate Zener components in most industrial layouts, reducing BOM count and PCB area.

Can STW30N80K5 replace older MDmesh K3 devices in existing designs?

Yes-STW30N80K5 is a direct drop-in replacement for STW30N80K3 in TO-247 footprint, offering identical pinout, improved R_DS(on) (180 → 150 mΩ typ.), lower Q_g (48 → 43 nC), and enhanced avalanche ruggedness (E_AS increased from 360 to 440 mJ), enabling immediate efficiency gains without layout changes.

What is the typical reverse recovery charge of the body diode at 150 °C junction temperature?

At T_J = 150 °C, the body diode exhibits Q_rr = 13.2 µC under standard test conditions (I_SD = 24 A, di/dt = 100 A/µs, V_DD = 60 V), as documented in Table 7 of DS11383 Rev 3. This value is critical for calculating commutation losses in bridge configurations and selecting snubber components.

STW30N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1530 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW30N80K5 FAQ

1.How can I place an order for STW30N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW30N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW30N80K5 reliable?

The price and inventory of STW30N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW30N80K5 is usually 5 days.

3.What payment methods are accepted for STW30N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW30N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW30N80K5?

STW30N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW30N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW30N80K5?

For technical support, including STW30N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW30N80K5 requirements.

6.How does Aetrix verify that STW30N80K5 is sourced from the original manufacturer or authorized distributors?

All STW30N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW30N80K5 meets industry standards.

7.What is the process for return or replacement of STW30N80K5?

All STW30N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW30N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW30N80K5 part is unused and in its original packaging.

Return procedure for STW30N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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