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STMicroelectronics STW30NM50N
- Part No.:
- STW30NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW30NM50N.pdf
- Description:
- MOSFET N-CH 500V 27A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:222
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Product details
Overview
STW30NM50N from STMicroelectronics is an N-channel 500 V, 27 A, 0.090 Ω RDS(on) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (94 nC), and low input capacitance (2740 pF), enabling fast switching with reduced losses in SMPS, PFC, and industrial motor drives.
For engineers reviewing the STW30NM50N datasheet, STW30NM50N pinout, STW30NM50N application, or STW30NM50N equivalent, key selection criteria include its 500 V VDS, 0.090 Ω RDS(on) at VGS = 10 V, 94 nC total gate charge, 150 °C max junction temperature, and TO-247 thermal resistance of 0.66 °C/W (junction-to-case).
Technical Context
This device employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 500 V breakdown voltage and 150 °C Tj(max) support operation in universal-input offline converters and industrial DC-link switching.
The MOSFET delivers 108 A pulsed drain current and 900 mJ single-pulse avalanche energy, with a reverse recovery time of 480 ns (Tj = 25 °C) and 540 ns (Tj = 150 °C) for its integrated body diode - critical for hard-switched inductive load handling without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports 400 V DC bus designs with 25% margin for transient overvoltage in industrial and telecom power supplies. |
| RDS(on) max | 0.115 Ω @ VGS = 10 V, ID = 13.5 A - Enables <1.5 W conduction loss at 27 A continuous current with proper heatsinking. |
| Qg | 94 nC - Reduces gate drive power requirement and enables use with standard 1–2 A peak gate drivers in 100–300 kHz SMPS. |
| ID (cont.) | 27 A @ TC = 25 °C - Sustains full rated current when mounted on adequately sized heatsink per TO-247 thermal spec. |
| EAS | 900 mJ - Withstands unclamped inductive switching events up to 12 A avalanche current without failure. |
| dv/dt rating | 15 V/ns - Resists parasitic turn-on in high-speed half-bridge configurations with fast-rising bus voltages. |
Pinout & Package
STW30NM50N uses the TO-247 package - a through-hole, 3-terminal power package with isolated mounting flange, optimized for high-power dissipation and mechanical robustness in industrial environments. Thermal resistance junction-to-case is 0.66 °C/W, enabling efficient heat transfer to external heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; 2.7 Ω gate input resistance minimizes oscillation risk with standard PCB trace routing. |
| 2 (Drain) | High-side power terminal | Internally connected to metal tab; electrically tied to heatsink - requires isolation hardware if heatsink is grounded. |
| 3 (Source) | Power return/reference node | Serves as local ground reference for gate driver; low-inductance source loop design essential for EMI control in >100 kHz operation. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees robustness against unclamped inductive switching stress up to 12 A and 900 mJ, eliminating need for external clamping circuits in flyback/PFC stages. |
| Low Qg & Ciss | 94 nC gate charge and 2740 pF input capacitance enable faster switching transitions and lower driver losses versus legacy 500 V MOSFETs. |
| MDmesh™ II technology | Combines ultra-low RDS(on) (0.090 Ω) with high VDS rating - achieves best-in-class figure-of-merit (RDS(on) × Qg = 8.46 Ω·nC) for 500 V class. |
| Integrated body diode | Fast recovery diode with trr = 480 ns (25 °C) and Qrr = 8 µC supports synchronous rectification and freewheeling in LLC and phase-shifted full-bridge topologies. |
Applications
| Industrial Switch-Mode Power Supplies | Telecom Rectifier Modules |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW AC/DC front-end converters with universal input (90–264 VAC) and 400 V DC output. IC Role / Device Role / Timing Role: High-voltage power switch in hard-switched forward or LLC resonant converter operating at 100–200 kHz. Use Value: Low RDS(on) reduces conduction loss by ~25% vs. comparable 500 V MOSFETs; 94 nC Qg enables efficient gate driving with minimal driver IC overhead. |
Use Scenario: Active clamp switch and main power switch in 48 V telecom rectifiers handling 2–5 kW loads with high efficiency mandates (>94%). IC Role / Device Role / Timing Role: High-reliability switching element in active clamp forward topology, subjected to repetitive avalanche during clamp cycle. Use Value: 900 mJ EAS ensures no degradation after 10⁵+ clamp cycles; TO-247 package supports >150 W dissipation with forced-air cooling. |
| Motor Drive Inverters (HVAC) | Induction Heating Half-Bridge |
|
Use Scenario: Upper-leg IGBT replacement in 3–7.5 kW HVAC inverter drives using 600 V DC bus. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg, commutating 20–30 A RMS motor current at 4–16 kHz PWM frequency. Use Value: 108 A pulsed ID capability handles motor surge currents; low Coss (160 pF) minimizes switching loss during zero-voltage transition in soft-switched inverters. |
Use Scenario: Main switching device in 10–20 kW resonant half-bridge for domestic/commercial induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-turning power switch managing high di/dt (≥400 A/µs) and reverse recovery stress during dead-time commutation. Use Value: Body diode trr = 480 ns and low Qrr reduce shoot-through risk and EMI generation; dv/dt rating of 15 V/ns prevents false triggering under high-frequency ringing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R099C7 | 650 V rating, 0.099 Ω RDS(on), 71 nC Qg, TO-220FP package | Lower voltage rating but superior gate charge; limited to ≤400 V DC bus; lower thermal performance (Rth(j-c) = 3.1 °C/W) | Select for cost-sensitive 400 V systems where gate drive efficiency outweighs voltage margin and thermal headroom. |
| IXFH50N50P | 500 V rating, 0.10 Ω RDS(on), 120 nC Qg, TO-247 package, non-avalanche rated | Higher Qg increases driver loss; no guaranteed avalanche ruggedness limits use in unclamped topologies like flyback. | Prefer only in clamped or ZVS topologies where avalanche stress is absent; verify SOA compliance for pulsed current demands. |
Compared with IPP60R099C7 and IXFH50N50P, STW30NM50N uniquely balances 500 V rating, 94 nC gate charge, and 100% avalanche testing in TO-247 - making it optimal for rugged, high-efficiency offline SMPS and industrial inverters requiring both voltage margin and switching speed.
Availability
STW30NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, HVAC motor drives, and induction heating systems requiring stable component supply and long-term manufacturability.
Supply support for STW30NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.
STW30NM50N belongs to ST's MDmesh™ II Power MOSFET product line - engineered specifically for high-efficiency, high-voltage power conversion in server PSUs, telecom infrastructure, and industrial motor controls.
FAQ
What is the maximum continuous drain current for STW30NM50N at case temperature 100 °C?
The maximum continuous drain current is 17 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package and must be respected in thermal design to avoid exceeding 150 °C junction temperature.
Does STW30NM50N have a fully rated avalanche capability?
Yes - STW30NM50N is 100% avalanche tested per datasheet Section 4, with IAR = 12 A and EAS = 900 mJ (Tj = 25 °C). This qualifies it for reliable operation in unclamped inductive switching applications such as flyback converters and active clamp circuits.
Can STW30NM50N be used with gate drive voltage below 10 V?
While VGS(th) is 2–4 V, full enhancement requires ≥10 V to achieve the specified 0.090 Ω RDS(on). At 5 V, RDS(on) rises significantly (>0.3 Ω), increasing conduction loss - thus 10 V gate drive is mandatory for rated performance.
Is the TO-247 package of STW30NM50N lead-free and RoHS compliant?
Yes - STW30NM50N is supplied in ECOPACK®-compliant TO-247 packaging with lead-free second-level interconnect, meeting RoHS Directive 2011/65/EU and JEDEC JESD97 standards, as confirmed in Section 4 of the datasheet.
STW30NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 94 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2740 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW30NM50N FAQ
1.How can I place an order for STW30NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STW30NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW30NM50N reliable?
The price and inventory of STW30NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW30NM50N is usually 5 days.
3.What payment methods are accepted for STW30NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW30NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW30NM50N?
STW30NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW30NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW30NM50N?
For technical support, including STW30NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW30NM50N requirements.
6.How does Aetrix verify that STW30NM50N is sourced from the original manufacturer or authorized distributors?
All STW30NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW30NM50N meets industry standards.
7.What is the process for return or replacement of STW30NM50N?
All STW30NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STW30NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW30NM50N part is unused and in its original packaging.
Return procedure for STW30NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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