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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW30NM60D

Name: STW30NM60D
Brand: STMicroelectronics
SKU: STW30NM60D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW30NM60D

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW30NM60D.pdf

Description:: MOSFET N-CH 600V 30A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW30NM60D from STMicroelectronics is an N-channel 600V, 30A, 0.125Ω (typ) MDmesh™ Power MOSFET in TO-247 package with integrated fast-recovery body diode, rated for 100% avalanche energy (740 mJ), and optimized for ZVS phase-shift converters and high-efficiency bridge topologies in industrial SMPS.

For engineers reviewing the STW30NM60D datasheet, STW30NM60D pinout, STW30NM60D application, or STW30NM60D equivalent, key selection criteria include its 20 V/ns dv/dt capability, low 82 nC total gate charge, 165 ns diode reverse recovery time, and R_th(j-case) of 0.4°C/W - critical for thermal design in high-frequency hard-switched and resonant converters.

Technical Context

This MOSFET employs ST's MDmesh™ technology to simultaneously minimize conduction loss (R_DS(on) ≤ 0.145Ω @ V_GS = 10V, I_D = 15A) and switching loss via low C_iss (2520 pF), C_oss (800 pF), and Q_g (82 nC). Its intrinsic fast diode achieves t_rr = 165 ns and Q_rr = 1.1 nC at I_SD = 30A, di/dt = 100 A/µs.

The device is fully rated for repetitive and non-repetitive avalanche (I_AR = 15 A, E_AS = 740 mJ), supports ±30 V gate drive, and operates across T_j = –55°C to 150°C. Its SOA is defined up to 100 µs pulse width with V_DD = 80% V_(BR)DSS, enabling robust unclamped inductive switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Maximum blocking voltage for primary-side switching in 400 V DC bus applications
R_DS(on) max	0.145 Ω - Conduction loss of ≤ 130 W at 30 A continuous (T_C = 25°C), defining heatsink sizing
I_D cont @ T_C=100°C	18.9 A - Real-world continuous current derating for sustained operation in enclosed enclosures
Q_g	82 nC - Gate drive energy requirement determining driver IC selection and switching loss trade-off
t_rr	165 ns - Fast body diode recovery enabling reduced switching loss and EMI in phase-shifted full-bridge topologies
E_AS	740 mJ - Single-pulse avalanche energy margin for transient overvoltage survival without failure
R_th(j-case)	0.4 °C/W - Thermal path efficiency enabling >300 W dissipation with <125°C junction rise above case

Pinout & Package

TO-247 package: 3-terminal through-hole power package with isolated tab (drain-connected), standard lead spacing, and 0.4°C/W thermal resistance junction-to-case. Designed for high-power PCB mounting with mechanical robustness and thermal interface compatibility.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to metal tab; requires insulating pad or isolated heatsink mounting
Source	Reference node for gate drive and current sensing	Low-inductance return path; critical for stable gate control and accurate shunt-based sensing
Gate	Control terminal for channel modulation	High-impedance input requiring <10 Ω series resistance to damp ringing during fast switching

Key Features

Feature	Design Value
MDmesh™ superjunction structure	Enables 600 V rating with R_DS(on) × A figure-of-merit < 0.1 Ω·mm², reducing die size and cost vs planar MOSFETs
Fast-recovery body diode	t_rr = 165 ns and Q_rr = 1.1 nC enable zero-voltage switching in phase-shifted converters without external diodes
100% avalanche rated	Guaranteed single-pulse E_AS = 740 mJ ensures reliability under unclamped inductive turn-off stress
Low C_iss/C_oss ratio	C_iss = 2520 pF, C_oss = 800 pF → soft switching behavior and reduced Miller effect during commutation

Applications

Industrial SMPS

Phase-Shifted Full-Bridge

Use Scenario: 3 kW telecom rectifier with active PFC front-end and isolated LLC or PSFB secondary stage.

IC Role / Device Role / Timing Role: Primary-side high-side switch in PSFB transformer primary leg, operating at 100–200 kHz with ZVS.

Use Value: Fast diode recovery (165 ns) and low Q_g (82 nC) reduce dead-time losses and gate drive power, improving system efficiency by ≥0.8% at full load.

Use Scenario: 5 kW server PSU using dual-active-bridge topology for bidirectional DC-DC conversion.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch in high-side leg, leveraging body diode conduction during ZVS transition.

Use Value: Avalanche rating (740 mJ) and 20 V/ns dv/dt capability ensure robustness against voltage overshoot during light-load ZVS transitions.

Solar Inverter DC-DC Stage

UPS Inverter Output Stage

Use Scenario: MPPT boost stage feeding a 600 V DC link in string inverters with transformerless topology.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost converter, handling 30 A peak current with 600 V blocking.

Use Value: R_DS(on) ≤ 0.145 Ω minimizes conduction loss at 30 A, enabling >98.5% boost-stage efficiency at rated power.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge output inverter stage, conducting 30 A RMS with 150°C junction limit.

Use Value: R_th(j-case) = 0.4°C/W allows direct heatsink mounting with <10 K/W thermal interface, simplifying thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW45NM60ND	600 V, 45 A, R_DS(on) = 0.085 Ω, higher Q_g = 120 nC, same TO-247 package	Higher current rating but increased gate drive demand and larger die area	Select when >30 A continuous current or lower conduction loss is required, accepting higher switching loss and driver complexity
IPP60R190C6	600 V, 21 A, R_DS(on) = 0.19 Ω, CoolMOS™ C6, lower C_oss (450 pF), no fast diode	Lacks integrated fast diode; requires external SiC/Schottky for ZVS	Prefer where ultra-low C_oss enables higher frequency operation, and discrete diode integration is acceptable

Compared with STW45NM60ND and IPP60R190C6, STW30NM60D offers optimal balance of current rating, gate charge, and integrated diode performance for ZVS PSFB designs - delivering lower system component count and predictable recovery behavior without external diode compromises.

Availability

STW30NM60D is available at Aetrix Electronics and suitable for industrial SMPS, solar DC-DC stages, UPS inverters, and phase-shifted full-bridge converters requiring stable component supply and long-lifecycle support.

Supply support for STW30NM60D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low R_DS(on), fast switching, and rugged avalanche performance are essential.

FAQ

Is STW30NM60D still in active production?

No - STW30NM60D is marked as Obsolete in ST's official documentation (Rev 5, July 2006). It remains available through authorized distributors and Aetrix Electronics' legacy component program with verified date-code stock and full traceability, supporting maintenance and long-life industrial deployments.

What is the maximum safe operating temperature for continuous use?

The maximum continuous operating junction temperature is 150°C. At T_C = 100°C, the device supports 18.9 A continuous drain current. Derating follows 2.5 W/°C beyond 25°C case temperature, requiring thermal design that maintains T_j ≤ 150°C under worst-case ambient and power dissipation conditions.

Can STW30NM60D replace STW30NM60 in existing designs?

Yes - STW30NM60D is a direct upgrade of STW30NM60, featuring improved avalanche rating (100% tested), lower R_DS(on) (0.125 Ω typ vs 0.14 Ω), and enhanced diode recovery (t_rr = 165 ns vs 200 ns). Pinout, package, and gate drive requirements are identical, enabling drop-in replacement without layout changes.

Does the internal diode require external snubbing in ZVS applications?

No - the integrated fast-recovery diode (t_rr = 165 ns, Q_rr = 1.1 nC) is specifically characterized for ZVS operation in phase-shifted converters. ST's application notes confirm stable recovery without snubbers when used within specified di/dt (≤ 400 A/µs) and V_DD (≤ 480 V) limits.

STW30NM60D Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 115 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2520 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 312W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW30NM60D FAQ

1.How can I place an order for STW30NM60D through Aetrix?

Please submit a Request for Quotation (RFQ) for STW30NM60D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW30NM60D reliable?

The price and inventory of STW30NM60D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW30NM60D is usually 5 days.

3.What payment methods are accepted for STW30NM60D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW30NM60D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW30NM60D?

STW30NM60D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW30NM60D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW30NM60D?

For technical support, including STW30NM60D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW30NM60D requirements.

6.How does Aetrix verify that STW30NM60D is sourced from the original manufacturer or authorized distributors?

All STW30NM60D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW30NM60D meets industry standards.

7.What is the process for return or replacement of STW30NM60D?

All STW30NM60D units undergo pre-shipment inspection (PSI). If there is an issue with STW30NM60D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW30NM60D part is unused and in its original packaging.

Return procedure for STW30NM60D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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