STMicroelectronics STW30NM60N

Overview

STW30NM60N from STMicroelectronics is an N-channel 600 V, 25 A, 0.1 Ω R_DS(on) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (91 nC), and low input capacitance (2700 pF), enabling fast switching in industrial SMPS and PFC stages.

For engineers reviewing the STW30NM60N datasheet, STW30NM60N pinout, STW30NM60N application, or STW30NM60N equivalent, key selection criteria include its 600 V V_DSS, 150 °C max junction temperature, 190 W power dissipation at T_C = 25 °C, and TO-247 thermal resistance of 0.66 °C/W (junction-to-case).

Technical Context

This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses. Its 0.1 Ω R_DS(on) at V_GS = 10 V and 12.5 A, along with 50 nC Q_gd, supports high-frequency operation in hard-switched topologies.

The integrated body diode exhibits 540 ns reverse recovery time and 10 µC Q_rr at T_j = 25 °C, enabling reliable performance in synchronous rectification and flyback configurations without external snubbing.

Key Specifications

Pinout & Package

STW30NM60N is housed in a TO-247 package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain, requiring insulated mounting hardware when mounted to a common heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7 and IXFH30N60P, STW30NM60N offers the best balance of low Q_g/R_DS(on) ratio and proven avalanche ruggedness for 200–300 kHz industrial SMPS, with TO-247 mechanical compatibility and established field reliability.

Availability

STW30NM60N is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, and motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STW30NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW30NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including telecom rectifiers, server PSUs, and renewable energy systems.

FAQ

What is the maximum safe operating voltage for STW30NM60N in continuous DC operation?

The absolute maximum drain-source voltage (V_DS) is rated at 600 V with V_GS = 0. This rating applies to steady-state DC conditions. For reliable long-term operation, design margins should limit peak V_DS to ≤ 480 V in hard-switched topologies to accommodate voltage spikes and ensure >10-year field life.

Does STW30NM60N require a negative gate turn-off voltage?

No. STW30NM60N has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. A negative turn-off voltage is not required; however, a gate resistor (typically 10–47 Ω) and optional gate-source capacitor (1–10 nF) are recommended to suppress ringing during fast switching.

Can STW30NM60N replace STP30NM60N in existing TO-220 layouts?

No. STW30NM60N uses a TO-247 package with different pin spacing, tab orientation, and mounting hole pattern than the TO-220 STP30NM60N. Mechanical redesign and PCB rework are required. Electrical parameters are nearly identical, but thermal performance differs due to lower R_thj-case (0.66 °C/W vs 0.66 °C/W for TO-220 is incorrect-TO-220 is 0.66 °C/W per Table 3, but TO-247 is also 0.66 °C/W; actual difference lies in heatsink interface geometry and mounting torque tolerance).

Is STW30NM60N suitable for use in synchronous rectification?

Not as a synchronous rectifier. STW30NM60N is optimized as a primary-side high-side switch-not a low-side FET. Its body diode recovery characteristics (540 ns t_rr, 10 µC Q_rr) are adequate for freewheeling but lack the ultra-low Q_rr and fast t_rr (<100 ns) needed for high-frequency synchronous rectification. Use dedicated SR controllers with logic-level FETs instead.