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STMicroelectronics STW30NM60ND
- Part No.:
- STW30NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW30NM60ND.pdf
- Description:
- MOSFET N-CH 600V 25A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,300
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Product details
Overview
STW30NM60ND from STMicroelectronics is an N-channel 600 V, 0.11 Ω (typ), 25 A FDmesh™ II Power MOSFET with integrated fast-recovery body diode in TO-247 package. It delivers high avalanche ruggedness (900 mJ EAS), 40 V/ns dv/dt capability, and low gate charge (100 nC), making it suitable for ZVS phase-shift converters and high-efficiency bridge topologies.
For engineers reviewing the STW30NM60ND datasheet, STW30NM60ND pinout, STW30NM60ND application, or STW30NM60ND equivalent, key selection criteria include RDS(on) stability over temperature, unclamped inductive switching robustness, diode reverse recovery performance (trr = 170 ns @ 25 °C), and thermal resistance (Rthj-case = 0.66 °C/W) in high-power SMPS designs.
Technical Context
This device belongs to ST's second-generation FDmesh™ II technology, combining a vertical superjunction structure with strip layout to simultaneously reduce conduction loss and switching loss while enabling intrinsic fast diode behavior. Its 600 V VDSS, 150 °C max junction temperature, and 100% avalanche-tested construction support operation in hard-switched and resonant converter stages.
The MOSFET exhibits low Ciss (2800 pF), Coss (200 pF), and Crss (24 pF) at VDS = 50 V, enabling efficient gate drive with minimal Miller effect. Its 1.6 V forward diode voltage (VSD) at ISD = 25 A and 1.2 µC Qrr support reduced switching losses in synchronous rectification and bidirectional power flow applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands DC bus voltages up to 480 V in 400 V AC-input PFC and industrial DC-link applications |
| RDS(on) max | 0.13 Ω - Ensures ≤3.3 W conduction loss at 25 A continuous drain current (TC = 25 °C) |
| ID cont | 25 A - Supports high-current output stages in telecom rectifiers and UPS inverters |
| EAS | 900 mJ - Enables reliable unclamped inductive switching without external snubbers in flyback or LLC primary switches |
| trr | 170 ns - Limits diode reverse recovery loss and EMI generation in bridge-leg commutation |
| Qg | 100 nC - Allows efficient gate driving with standard 1–2 A peak drivers at 100–300 kHz switching frequencies |
| Rthj-case | 0.66 °C/W - Enables >150 W power dissipation with moderate heatsinking in TO-247 mounting configuration |
Pinout & Package
STW30NM60ND is housed in a TO-247 package - a through-hole, isolated-tab power package with high thermal and current handling capability. The tab is electrically connected to the drain terminal and must be mounted to a heatsink with appropriate insulation per application safety requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for drain current; reference node for gate drive | Low-inductance connection point for source loop routing; ties to PCB ground plane or low-side shunt |
| 2 (Gate) | Control electrode for channel modulation | High-impedance input requiring <3 Ω series gate resistor to damp ringing; sensitive to ESD and noise coupling |
| 3 (Drain) | Main high-voltage power terminal; connects to heat sink | Electrically tied to metal tab - requires reinforced isolation (2500 V RMS) when mounted to conductive heatsinks |
Key Features
| Feature | Design Value |
|---|---|
| FDmesh™ II superjunction architecture | Reduces RDS(on) × area by 30% vs. first-gen MDmesh, enabling higher power density in TO-247 footprint |
| Intrinsic fast-recovery body diode | trr = 170 ns and Qrr = 1.2 µC eliminate need for external anti-parallel SiC/Schottky diodes in half-bridge legs |
| 100% unclamped avalanche tested | Guarantees single-pulse energy handling up to 900 mJ - critical for reliability in overload and short-circuit conditions |
| Low Crss / Ciss ratio | 24 pF / 2800 pF = 0.86% - minimizes Miller-induced turn-on risk during high dv/dt transitions in high-side switching |
| ECOPACK® lead-free construction | Complies with RoHS and JEDEC JESD97 standards; compatible with Pb-free reflow and wave soldering processes |
Applications
| Industrial Switch-Mode Power Supplies | ZVS Phase-Shift Full-Bridge Converters |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers operating at 100–200 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage, high-current switching element in asymmetric half-bridge topology; handles full load current during active PWM phases. Use Value: Low RDS(on) and fast diode reduce conduction and commutation losses, improving efficiency from 92% to 94.5% at full load. |
Use Scenario: Leg switch in isolated DC-DC modules for server PSUs, where zero-voltage switching reduces EMI and stress. IC Role / Device Role / Timing Role: Active clamp-assisted soft-switching device; body diode conducts lagging-leg freewheeling current before turn-on. Use Value: 170 ns trr and 40 V/ns dv/dt rating enable clean ZVS transition across wide load range without voltage spikes. |
| Uninterruptible Power Supplies (UPS) | Motor Drive Inverter Stages |
|
Use Scenario: Inverter-stage switch in online double-conversion UPS systems delivering 2–5 kVA with battery backup. IC Role / Device Role / Timing Role: Bidirectional power switch in H-bridge output stage; supports regenerative braking via body diode conduction. Use Value: 100 A pulsed drain current (IDM) and 900 mJ EAS withstand surge currents during battery-to-inverter transfer events. |
Use Scenario: High-side switch in 3-phase IGBT/MOSFET inverter for HVAC compressors and industrial pumps (0.75–2.2 kW). IC Role / Device Role / Timing Role: Fast-switching power transistor in variable-frequency drive output stage; body diode recirculates motor inductive current. Use Value: Low Qgd/Qg ratio (54/100 nC) improves gate drive efficiency and enables precise dead-time control to prevent shoot-through. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW30NM60N | Same FDmesh™ II die but no fast-diode optimization; trr = 300 ns, Qrr = 3.5 µC | Higher diode recovery loss limits use in ZVS topologies; better suited for hard-switched PFC | Select when cost sensitivity outweighs soft-switching performance; verify diode loss budget in bridge designs |
| IPP60R099C7 | Infineon CoolMOS™ C7: 600 V, 0.099 Ω, 30 A, trr = 140 ns, Qg = 85 nC, TO-247 | Lower RDS(on) and gate charge improve light-load efficiency; tighter Vth distribution aids paralleling | Prefer for new designs targeting <95% efficiency at 25% load; requires updated gate drive layout due to lower Qg |
Compared with STW30NM60N, STW30NM60ND offers superior diode recovery for ZVS operation, while IPP60R099C7 provides lower conduction loss and gate drive energy - making STW30NM60ND optimal for legacy designs prioritizing ruggedness and proven fast-diode behavior in phase-shift converters.
Availability
STW30NM60ND is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, uninterruptible power systems, ZVS phase-shift converters, and motor drive inverter stages requiring stable component supply and long-term production continuity.
Supply support for STW30NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STW30NM60ND belongs to the FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial power conversion systems where fast body diode performance and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current for STW30NM60ND at case temperature of 100 °C?
The maximum continuous drain current is 15.8 A when the case temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.
Does STW30NM60ND require an external freewheeling diode in bridge configurations?
No - STW30NM60ND integrates a fast-recovery body diode with 170 ns reverse recovery time and 1.2 µC Qrr at 25 °C, validated for use in bridge-leg freewheeling without external diodes. Its FDmesh™ II process ensures consistent diode performance across temperature and current, eliminating added component count and layout complexity.
What is the gate threshold voltage range, and how does it vary with temperature?
VGS(th) is specified from 3 V (min) to 5 V (max) at 25 °C, with typical value of 4 V. Figure 14 shows normalized VGS(th) decreases linearly with rising junction temperature - approximately 0.95× nominal at 125 °C - enabling predictable turn-on timing across the full –50 °C to 150 °C operating range.
Can STW30NM60ND be paralleled for higher current capacity?
Yes - its positive temperature coefficient of RDS(on) (Figure 15 shows ~1.9× increase from –50 °C to 150 °C) promotes natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to suppress oscillation; ST recommends ≤2 devices in parallel without active current balancing.
STW30NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2800 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW30NM60ND FAQ
1.How can I place an order for STW30NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STW30NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW30NM60ND reliable?
The price and inventory of STW30NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW30NM60ND is usually 5 days.
3.What payment methods are accepted for STW30NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW30NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW30NM60ND?
STW30NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW30NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW30NM60ND?
For technical support, including STW30NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW30NM60ND requirements.
6.How does Aetrix verify that STW30NM60ND is sourced from the original manufacturer or authorized distributors?
All STW30NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW30NM60ND meets industry standards.
7.What is the process for return or replacement of STW30NM60ND?
All STW30NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW30NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW30NM60ND part is unused and in its original packaging.
Return procedure for STW30NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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