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STMicroelectronics STW32N65M5

Name: STW32N65M5
Brand: STMicroelectronics
SKU: STW32N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW32N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW32N65M5.pdf

Description:: MOSFET N-CH 650V 24A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW32N65M5 from STMicroelectronics is an N-channel 650 V, 24 A MDmesh M5 Power MOSFET in D²PAK (TO-263) package, featuring 95 mΩ typ. R_DS(on), 72 nC total gate charge, and 150 W power dissipation at T_C = 25 °C. It delivers high-efficiency switching in high-voltage DC-DC converters and industrial motor drives.

For engineers reviewing the STW32N65M5 datasheet, STW32N65M5 pinout, STW32N65M5 application, or STW32N65M5 equivalent, key selection criteria include avalanche ruggedness (650 mJ E_AS), fast switching (53 ns t_d(off)), low C_iss (3320 pF), and diode recovery performance (375 ns t_rr at 25 °C).

Technical Context

This MOSFET employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining robust 650 V breakdown voltage and 15 V/ns dv/dt immunity. Its integrated body diode supports hard-switched inductive loads with controlled reverse recovery.

The device operates across –55 °C to 150 °C junction temperature, with thermal resistance R_thJC = 0.83 °C/W enabling high-power density PCB layouts. Gate threshold voltage (3–5 V) and low input capacitance support direct drive from standard 10 V logic-level controllers without gate drivers in many applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V nominal with ≥1.6× safety margin for surge and ringing in offline SMPS.
R_DS(on) max	119 mΩ at V_GS = 10 V, I_D = 12 A - Enables <1.7 W conduction loss at 24 A continuous current in TO-263 package.
Q_g	72 nC - Reduces gate drive power and enables efficient operation at 100–300 kHz switching frequencies.
E_AS	650 mJ - Supports unclamped inductive switching events without failure, critical for PFC and motor phase-leg protection.
t_rr	375 ns at T_J = 25 °C - Limits diode recovery losses and EMI generation during hard commutation in bridge topologies.
R_thJC	0.83 °C/W - Allows 150 W dissipation with ≤125 °C case-to-junction rise, supporting compact heatsink integration.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection; thermally enhanced plastic surface-mount outline compliant with JEDEC MO-211AD.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Electrically and thermally connected to internal die drain; requires soldered copper area for heat transfer and low-inductance return path.
Pin 1 (Gate)	Control input	Low-impedance gate node requiring <2 Ω series resistance to suppress oscillation; sensitive to ESD (±25 V rating).
Pin 3 (Source)	Power return reference	Common source node for gate drive loop and load current return; must be low-inductance to minimize V_GS noise during switching.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS ≥ 650 mJ and repetitive I_AR = 8 A under defined test conditions per datasheet.
MDmesh M5 process	Delivers 95 mΩ typ. R_DS(on) at 650 V - 30% lower on-resistance than prior-generation MDmesh M2 devices in same package.
Low Q_gd/Q_gs ratio	29 nC / 17 nC = 1.7 - Improves Miller immunity and reduces risk of false turn-on in high-dv/dt half-bridge configurations.
Optimized body diode	t_rr = 375 ns and Q_rr = 6 µC at 25 °C - Minimizes reverse recovery losses and associated voltage overshoot in LLC and phase-shifted full-bridge designs.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Half-bridge leg in 3 kW servo drive inverters operating at 16 kHz PWM frequency with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 24 A RMS phase current with forced-air cooling.

Use Value: 119 mΩ R_DS(on) limits conduction loss to <1.5 W per device, while 650 mJ E_AS withstands motor regeneration spikes.

Use Scenario: Primary-side switch in 1.5 kW active-clamp forward or LLC resonant converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch sustaining 520 V V_DD stress during ZVS transitions and managing 15 A peak drain current.

Use Value: 3320 pF C_iss and 72 nC Q_g enable efficient 300 kHz operation with minimal gate drive loss and reduced transformer magnetizing current.

Photovoltaic Inverters

Induction Heating Systems

Use Scenario: DC-link switch in string-level MPPT boost stage for residential solar inverters with 600 V maximum input voltage.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling 12 A continuous boost current with 100 µs pulse-width modulation.

Use Value: 15 V/ns dv/dt rating ensures reliable operation during fast voltage transients caused by PV array capacitive coupling and lightning surges.

Use Scenario: Inverter bridge switch in 5 kW domestic induction cooktop operating at 20–50 kHz resonant frequency with 30 A pulsed load current.

IC Role / Device Role / Timing Role: Fast-switching power transistor managing 96 A pulsed drain current (I_DM) during burst-mode heating cycles.

Use Value: 375 ns t_rr and low Q_rr reduce diode-induced switching loss and EMI, improving thermal stability during sustained high-power bursts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP32N65M5	Same die, TO-220 package with higher R_thJA (62 °C/W vs. 30 °C/W) and no exposed drain tab.	Limited to lower-power (<80 W) convection-cooled designs; unsuitable for high-current surface-mount PCBs.	Select when mechanical mounting constraints prohibit D²PAK or when through-hole assembly is required.
IPP65R110CFD7	Infineon CoolMOS CFD7: 110 mΩ R_DS(on), 650 V, but higher Q_g (82 nC) and slower t_rr (520 ns).	Higher gate drive loss and greater diode recovery energy increase system EMI and thermal stress in high-frequency PFC stages.	Prefer only if legacy board design mandates Infineon footprint compatibility or specific driver IC co-design.

Compared with STP32N65M5, STW32N65M5 offers 2.5× better thermal resistance and surface-mount scalability; versus IPP65R110CFD7, it delivers 15% lower switching loss and 28% faster diode recovery for improved efficiency in >200 kHz resonant topologies.

Availability

STW32N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW32N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh M5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 400–800 V DC systems including server PSUs, solar inverters, and industrial motor controls.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW32N65M5 supports 15 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6032 Rev 6. This derating reflects thermal limitations of the D²PAK package and ensures safe operation within the SOA boundary at elevated temperatures.

Does this MOSFET have an integrated body diode, and what are its key recovery parameters?

Yes, it features a monolithic source-drain body diode rated for 24 A continuous and 96 A pulsed current. Key recovery specs include t_rr = 375 ns and Q_rr = 6 µC at T_J = 25 °C, with I_RRM = 33 A - all measured under standardized 100 A/µs di/dt and 60 V V_DD conditions per Figure 16 test circuit.

Can STW32N65M5 replace STB32N65M5 in existing designs?

Yes - STW32N65M5 and STB32N65M5 share identical electrical specifications, thermal characteristics, and D²PAK package dimensions. The difference lies only in packaging format: STW denotes tape-and-reel, STB denotes bulk; both use the same die and marking "32N65M5".

What is the recommended gate resistor value for hard-switched 200 kHz operation?

For 200 kHz hard-switched operation with V_GS = 10 V drive, a 4.7 Ω gate resistor is validated per Figure 16 test circuit and yields t_d(off) = 53 ns and t_f = 16 ns. Lower values (≤2.2 Ω) may cause ringing; higher values (>10 Ω) increase switching loss beyond 0.5 W per transition.

STW32N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 119mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3320 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW32N65M5 FAQ

1.How can I place an order for STW32N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW32N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW32N65M5 reliable?

The price and inventory of STW32N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW32N65M5 is usually 5 days.

3.What payment methods are accepted for STW32N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW32N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW32N65M5?

STW32N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW32N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW32N65M5?

For technical support, including STW32N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW32N65M5 requirements.

6.How does Aetrix verify that STW32N65M5 is sourced from the original manufacturer or authorized distributors?

All STW32N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW32N65M5 meets industry standards.

7.What is the process for return or replacement of STW32N65M5?

All STW32N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW32N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW32N65M5 part is unused and in its original packaging.

Return procedure for STW32N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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