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STMicroelectronics STW33N60DM2

Name: STW33N60DM2
Brand: STMicroelectronics
SKU: STW33N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW33N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW33N60DM2.pdf

Description:: MOSFET N-CH 600V 24A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW33N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in TO-247 package, designed for primary-side switching in high-efficiency AC-DC converters and ZVS phase-shifted bridge topologies. It features 600 V V(BR)DSS, 0.110 Ω typ. RDS(on) at VGS = 10 V and ID = 12 A, 150 ns trr (Tj = 25 °C), and 50 V/ns dv/dt ruggedness.

For engineers reviewing the STW33N60DM2 datasheet, STW33N60DM2 pinout, STW33N60DM2 application, or STW33N60DM2 equivalent, key selection criteria include fast-recovery body diode performance, low gate charge (43 nC), avalanche robustness (570 mJ EAS), thermal resistance (0.66 °C/W j-case), and Zener-protected gate.

Technical Context

This MDmesh™ DM2 series MOSFET integrates a fast-recovery intrinsic body diode with Qrr = 0.5 µC (Tj = 25 °C) and trr = 150 ns under ISD = 24 A, di/dt = 100 A/µs conditions. Its low Coss eq. (157 pF at VDD = 480 V) and Crss (2 pF) support high-frequency soft-switching operation.

The device employs a Zener-protected gate structure (V(BR)GSO = ±30 V) and achieves 5.5 A repetitive avalanche current capability. Its SOA is validated up to 96 A pulsed drain current with safe operating area constrained by junction temperature limits (Tj ≤ 150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	600 V - Withstands 600 V drain-source blocking voltage before breakdown, enabling use in 400 VAC rectified bus applications.
RDS(on) typ.	0.110 Ω - Delivers low conduction loss at 12 A, reducing power dissipation in continuous high-current switching.
Qg	43 nC - Enables efficient gate drive with reduced driver power and faster turn-on/turn-off transitions.
trr	150 ns - Minimizes reverse recovery losses and EMI in hard- and soft-switched bridge configurations.
EAS	570 mJ - Supports unclamped inductive switching events without failure, enhancing system reliability during fault transients.
Rthj-case	0.66 °C/W - Allows effective heat transfer to heatsink in TO-247 package, supporting 190 W total dissipation at Tcase = 25 °C.
dv/dt ruggedness	50 V/ns - Ensures immunity to parasitic turn-on during high-speed voltage transients in high-side switching.

Pinout & Package

STW33N60DM2 uses the TO-247 package: a 3-pin through-hole power package with isolated tab (drain-connected), optimized for high-power thermal management and mechanical robustness in industrial power supplies.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to power ground or low-side switch node in half-bridge configurations.
Pin 2 (Gate)	Control input	Receives 10 V logic-level gate drive; Zener-protected to ±30 V to prevent ESD-induced gate oxide damage.
Pin 3 (Drain)	High-voltage output	Connected to main DC bus or transformer primary; electrically tied to metal tab for direct heatsink mounting.

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 150 ns and Qrr = 0.5 µC enable reduced switching loss and lower EMI in synchronous rectification and LLC resonant topologies.
Low gate charge	Qg = 43 nC minimizes driver IC power consumption and allows use of cost-effective gate drivers in high-frequency SMPS designs.
Zener-protected gate	V(BR)GSO = ±30 V provides built-in overvoltage clamping, eliminating need for external gate protection components.
100% avalanche tested	Each unit passes single-pulse avalanche stress test (EAS = 570 mJ), ensuring field reliability under transient overvoltage conditions.
High dv/dt ruggedness	Rated for 50 V/ns ensures stable operation without spurious turn-on in high-di/dt environments like motor drives and PFC stages.

Applications

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 3.3 kW server power supply operating at 100 kHz with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 VDC bus and delivering 24 A peak current per phase.

Use Value: Low Qrr (0.5 µC) and fast trr (150 ns) reduce body diode conduction loss and improve ZVS initiation margin across load range.

Use Scenario: 10 kVA online double-conversion UPS with IGBT-assisted inverter stage requiring fast freewheeling path.

IC Role / Device Role / Timing Role: Synchronous freewheeling switch replacing external diode in inverter leg, conducting 24 A continuous source-drain current.

Use Value: Integrated Zener-protected fast diode eliminates discrete diode count and reduces PCB footprint while maintaining <1.6 V forward drop at 24 A.

Solar Microinverter DC-Link Switch

EV Onboard Charger PFC Stage

Use Scenario: 300 W microinverter with interleaved boost + H-bridge inverter, operating at 85 kHz switching frequency.

IC Role / Device Role / Timing Role: DC-link switching element managing bidirectional energy flow between PV string and inverter bridge.

Use Value: 0.110 Ω RDS(on) and 157 pF Coss eq. minimize conduction and capacitive switching losses, improving efficiency above 96.5% at full load.

Use Scenario: 6.6 kW OBC with two-phase interleaved PFC, requiring high-reliability switching at 65 kHz.

IC Role / Device Role / Timing Role: Boost switch handling 600 V DC-link and 24 A RMS current in continuous conduction mode.

Use Value: 50 V/ns dv/dt rating prevents false triggering during fast voltage transitions on high-impedance gate traces in automotive EMI-sensitive environment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R120P7XKSA1	RDS(on) = 0.120 Ω, Qg = 37 nC, trr = 210 ns, TO-220FP package	Higher trr increases body diode loss in ZVS circuits; lower Qg eases gate drive but requires derating at >100 °C case temp	Select when lower gate drive power is prioritized over diode recovery performance in non-ZVS PFC stages.
IXFH32N60P	RDS(on) = 0.135 Ω, Qg = 52 nC, no specified trr or Qrr, TO-247 package	Lacks documented fast-recovery diode specs; avalanche rating (EAS = 390 mJ) is 32% lower than STW33N60DM2	Prefer only in hard-switched applications where diode recovery is not critical and thermal margin exceeds 20 °C.

Compared with IPP60R120P7XKSA1 and IXFH32N60P, STW33N60DM2 delivers superior diode recovery (150 ns trr vs. ≥210 ns), higher avalanche energy (570 mJ vs. ≤390 mJ), and tighter RDS(on) tolerance (0.110–0.130 Ω vs. 0.120–0.150 Ω), making it optimal for ZVS and high-reliability industrial power conversion.

Availability

STW33N60DM2 is available at Aetrix Electronics and suitable for server PSUs, industrial UPS inverters, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STW33N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STW33N60DM2 belongs to the MDmesh™ DM2 family-engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low Qrr, fast trr, and rugged dv/dt performance are essential.

FAQ

What is the maximum continuous drain current for STW33N60DM2 at 100 °C case temperature?

The maximum continuous drain current is 15.5 A at Tcase = 100 °C, as defined in Table 2 (Absolute Maximum Ratings). This derating reflects thermal limitations of the TO-247 package and silicon die, requiring proper heatsinking to sustain full 24 A operation at lower case temperatures.

Does STW33N60DM2 require an external gate resistor for reliable operation?

Yes-an external gate resistor (typically 4.7 Ω, per Figure 18 test circuit) is required to control dV/dt and di/dt during switching transitions. This limits peak gate current, dampens ringing, and ensures consistent turn-on/turn-off timing in high-power applications.

Can STW33N60DM2 replace STP33N60DM2 in existing TO-220-based designs?

No-STW33N60DM2 uses TO-247 packaging with different mechanical footprint, thermal interface, and pin spacing. Direct replacement would require PCB redesign, heatsink requalification, and layout verification due to altered parasitic inductance and thermal path.

Is the body diode in STW33N60DM2 suitable for synchronous rectification?

Yes-the fast-recovery body diode (trr = 150 ns, Qrr = 0.5 µC at Tj = 25 °C) is characterized for use in synchronous rectification, especially in LLC and phase-shifted full-bridge topologies where low reverse recovery loss is critical for efficiency.

STW33N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW33N60DM2 FAQ

1.How can I place an order for STW33N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW33N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW33N60DM2 reliable?

The price and inventory of STW33N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW33N60DM2 is usually 5 days.

3.What payment methods are accepted for STW33N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW33N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW33N60DM2?

STW33N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW33N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW33N60DM2?

For technical support, including STW33N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW33N60DM2 requirements.

6.How does Aetrix verify that STW33N60DM2 is sourced from the original manufacturer or authorized distributors?

All STW33N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW33N60DM2 meets industry standards.

7.What is the process for return or replacement of STW33N60DM2?

All STW33N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STW33N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW33N60DM2 part is unused and in its original packaging.

Return procedure for STW33N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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