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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW33N60M6

Name: STW33N60M6
Brand: STMicroelectronics
SKU: STW33N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW33N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW33N60M6.pdf

Description:: MOSFET N-CH 600V TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW33N60M6 from STMicroelectronics is an N-channel 600 V, 25 A, 105 mΩ (typ.) MDmesh M6 superjunction power MOSFET in TO-247 package, designed for high-efficiency switching in hard-switched and resonant topologies including LLC and boost PFC converters. It features 100% avalanche tested ruggedness, Zener-protected gate, and low gate input resistance for robust drive compatibility.

For engineers reviewing the STW33N60M6 datasheet, STW33N60M6 pinout, STW33N60M6 application, or STW33N60M6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (50 V/ns), E_AS = 500 mJ, and diode Q_rr = 3.07 µC at 25 °C - critical for ZVS/ZCS design validation and thermal SOA margining.

Technical Context

This MOSFET implements ST's MDmesh M6 technology, delivering improved R_DS(on)/area over prior MDmesh generations while maintaining ultra-low C_oss (128 pF) and C_rss (4.2 pF) for fast, low-loss switching. Its 1.5 Ω intrinsic gate resistance and 33.4 nC total gate charge enable precise timing control in high-frequency (>100 kHz) converters.

The device integrates a co-packaged body diode with 265 ns reverse recovery time (T_J = 25 °C) and 1.6 V forward voltage at 25 A, supporting synchronous rectification and bidirectional conduction in bridge-leg configurations. Its 0.66 °C/W R_thJC supports high-power density thermal management in industrial and server PSU designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in continuous operation with safety margin for transients.
R_DS(on) max	125 mΩ at V_GS = 10 V, I_D = 12.5 A - Enables <1.5 W conduction loss at 25 A, TC = 100 °C.
I_D cont	25 A at T_C = 25 °C - Supports high-current primary-side switching in 1–3 kW LLC resonant converters.
E_AS	500 mJ - Guarantees unclamped inductive switching survival under worst-case fault conditions without external snubbers.
Q_g	33.4 nC - Allows clean turn-on/turn-off with standard gate drivers (e.g., STGAP2SIC, UCC27611) at 100–300 kHz.
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transitions in high-dV/dt environments like motor drives.
T_J range	−55 to 150 °C - Validated for extended thermal cycling in outdoor telecom and industrial UPS applications.

Pinout & Package

TO-247 package: isolated metal tab (Drain), 3-pin through-hole outline with industry-standard footprint and 0.66 °C/W junction-to-case thermal resistance. Mounting via screw or clamp ensures low-thermal-resistance heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Low-impedance control terminal; 1.5 Ω intrinsic R_g minimizes gate oscillation risk with standard PCB trace routing.
2 (D / TAB)	Drain (exposed metal tab)	Main high-voltage current path; electrically connected to package backside for direct heatsink mounting and lowest R_thJC.
3 (S)	Source	Reference node for gate drive and current sensing; tied to source of half-bridge leg or ground-referenced switch node.

Key Features

Feature	Design Value
MDmesh M6 silicon architecture	12% lower R_DS(on)/area vs. MDmesh M5 - reduces die size and cost while improving power density.
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection - eliminates need for external gate Zener clamps in noisy environments.
100% avalanche tested	Single-pulse E_AS = 500 mJ verified per unit - guarantees ruggedness for field-deployed systems without derating.
Low Q_rr body diode	3.07 µC Q_rr at 25 °C - cuts diode switching losses by >40% vs. legacy SJ MOSFETs in PFC stages.
High dv/dt immunity	50 V/ns rated - prevents false turn-on in multi-kV/ns SiC/GaN co-designs and high-speed motor drives.

Applications

Server PSU LLC Resonant Converter

Industrial Boost PFC Stage

Use Scenario: Primary-side switch in 2 kW, 96% efficient 48 V output server power supply using asymmetric half-bridge LLC topology.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 250–500 kHz with zero-voltage switching; handles 25 A peak drain current.

Use Value: Low C_oss (128 pF) and 33.4 nC Q_g minimize dead-time losses and gate drive power, enabling >97% efficiency at full load.

Use Scenario: Active switch in three-phase 11 kW industrial AC-DC front-end with digital PFC controller.

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost switch handling 25 A RMS current at 100 kHz switching frequency.

Use Value: 105 mΩ R_DS(on) (typ.) and 1.6 V V_SD reduce conduction + reverse recovery losses, lowering heatsink requirements by 35%.

Telecom Rectifier Module

Renewable Energy Inverter DC Link

Use Scenario: Hot-swap-capable 48 V telecom rectifier with active OR-ing and transient overload protection.

IC Role / Device Role / Timing Role: High-reliability main switch subjected to repeated 78 A pulsed currents and lightning-induced surges.

Use Value: 100% avalanche-tested 500 mJ E_AS and −55 to 150 °C T_J rating ensure field longevity without derating in outdoor cabinets.

Use Scenario: DC-link switch in 5 kW solar string inverter interfacing PV array to H-bridge inverter stage.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch managing 600 V DC bus with bidirectional diode conduction during reactive power flow.

Use Value: 265 ns t_rr and 23.2 A I_RRM limit diode reverse recovery stress, preventing shoot-through in grid-synchronized modulation schemes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P7XKSA1	R_DS(on) = 99 mΩ (lower), but Q_g = 42.5 nC (higher); no Zener gate protection	Better conduction loss at light load; higher gate drive loss and reduced ESD robustness	Prefer when gate drive capability exceeds 2 A peak and system-level gate protection is implemented externally.
IXTH30N60L2	R_DS(on) = 130 mΩ (higher), Q_g = 28 nC (lower); avalanche rating not 100% tested	Lower gate loss but higher conduction loss; unverified single-pulse avalanche energy	Select only where SOA margin is relaxed and thermal budget allows 5 mΩ higher R_DS(on) at 100 °C.

Compared with IPW60R099P7XKSA1 and IXTH30N60L2, STW33N60M6 uniquely balances low R_DS(on), low Q_g, Zener gate protection, and guaranteed avalanche ruggedness - making it optimal for mission-critical industrial and telecom power supplies where reliability trumps marginal efficiency gains.

Availability

STW33N60M6 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STW33N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing, R&D, and sales operations across Europe, Asia, and the Americas.

The MDmesh M6 product line targets high-efficiency AC-DC and DC-DC conversion in industrial, computing, and renewable energy systems, emphasizing ruggedness, low-loss switching, and thermal performance at 600–650 V voltage class.

FAQ

What is the maximum recommended gate resistor value for STW33N60M6 in a 300 kHz LLC converter?

A 4.7 Ω gate resistor is validated in the datasheet for 300 kHz operation (td(on) = 19.5 ns, tf = 7.5 ns). Values above 10 Ω increase switching losses disproportionately due to 33.4 nC Q_g; below 2.2 Ω risks ringing without ferrite bead damping. For 300 kHz, 4.7 Ω provides optimal trade-off between EMI and efficiency.

Does STW33N60M6 support paralleling for higher current applications?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises from 1.0 to ~2.2 between −50 °C and 150 °C) enables stable current sharing. Parallel operation requires matched layout, identical gate drive paths, and individual 10 Ω gate resistors to prevent oscillation; derate total current by 15% for thermal imbalance.

How does the body diode's reverse recovery performance compare to discrete SiC Schottky alternatives?

At 25 °C, STW33N60M6's Q_rr = 3.07 µC and t_rr = 265 ns exceed typical 650 V SiC Schottky diodes (Q_rr ≈ 0 nC), but its soft recovery (IRRM = 23.2 A) reduces EMI vs. hard-switched SiC. For ZVS designs, it performs comparably; for hard-switched PFC, SiC remains superior in recovery loss.

Is STW33N60M6 qualified for automotive underhood applications per AEC-Q101?

No - STW33N60M6 is not AEC-Q101 qualified. It is specified for industrial, computing, and telecom applications with T_J = −55 to 150 °C, but lacks automotive-specific stress testing (e.g., HTGB, HTRB, ESD HBM ≥ 2 kV). ST offers AEC-Q101 variants like STL34N60M2 for automotive traction inverters.

STW33N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW33N60M6 FAQ

1.How can I place an order for STW33N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW33N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW33N60M6 reliable?

The price and inventory of STW33N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW33N60M6 is usually 5 days.

3.What payment methods are accepted for STW33N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW33N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW33N60M6?

STW33N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW33N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW33N60M6?

For technical support, including STW33N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW33N60M6 requirements.

6.How does Aetrix verify that STW33N60M6 is sourced from the original manufacturer or authorized distributors?

All STW33N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW33N60M6 meets industry standards.

7.What is the process for return or replacement of STW33N60M6?

All STW33N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STW33N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW33N60M6 part is unused and in its original packaging.

Return procedure for STW33N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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