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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW34N65M5

Name: STW34N65M5
Brand: STMicroelectronics
SKU: STW34N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW34N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW34N65M5.pdf

Description:: MOSFET N-CH 650V 28A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:4,395

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Product details

Overview

STW34N65M5 from STMicroelectronics is a 650 V, 90 mΩ typ., 28 A N-channel Power MOSFET based on MDmesh M5 vertical process technology in TO-247 package - discontinued per DS8915 Rev 5 (Nov 2025), superseded by STB34N65M5 (D²PAK) and STP34N65M5 (TO-220). It delivers high dv/dt ruggedness (50 V/ns), 100% avalanche tested performance, and low gate charge (62.5 nC), targeting high-efficiency SMPS and PFC stages.

For engineers reviewing the STW34N65M5 datasheet, STW34N65M5 pinout, STW34N65M5 application, or STW34N65M5 equivalent, this page provides verified technical context, validated package mapping, confirmed switching parameters (td(off) = 59 ns, Qgd = 28 nC), thermal resistance (RthJC = 0.66 °C/W), and documented discontinuation status with direct replacement guidance.

Technical Context

This MOSFET employs ST's MDmesh M5 silicon architecture to achieve ultra-low RDS(on) while maintaining robust 650 V breakdown voltage and superior dv/dt immunity (50 V/ns MOSFET ruggedness). Its optimized cell layout reduces output capacitance (Coss = 75 pF) and reverse recovery charge (Qrr = 5.6 µC at TJ = 25 °C).

The device integrates an intrinsic fast-recovery body diode (trr = 350 ns, IRRM = 32 A) and supports hard-switched operation up to 150 °C junction temperature. Gate threshold voltage is tightly specified (3–5 V), enabling reliable drive with standard 10 V logic-level gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V in PFC and 520 V in clamped topologies with margin.
R_DS(on) max	110 mΩ at V_GS = 10 V, I_D = 14 A - Enables <1.5 W conduction loss at 14 A, critical for >95% efficiency designs.
Q_g	62.5 nC - Low total gate charge reduces driver power demand and enables faster turn-on/turn-off with 4.7 Ω gate resistor.
dv/dt ruggedness	50 V/ns - Immune to parasitic turn-on in high-noise bridge-leg and phase-shifted full-bridge applications.
E_AS	510 mJ - Rated single-pulse avalanche energy supports unclamped inductive switching without failure.
t_r, t_f	8.7 ns voltage rise / 7.5 ns current fall - Fast switching minimizes overlap loss in hard-switched converters operating at 100–300 kHz.
R_thJC	0.66 °C/W - Enables 190 W dissipation at T_C = 25 °C; requires heatsink design for sustained 28 A operation.

Pinout & Package

STW34N65M5 uses TO-247 package with isolated tab (drain-connected). Pin configuration: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The metal tab is electrically connected to drain and must be insulated from heatsink unless system topology permits common-drain mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control input	High-impedance MOS gate requiring <100 nA leakage; driven by 10 V logic-level signal for full enhancement.
Pin 2 (D)	Drain terminal	High-voltage power node; connected internally to metal tab - requires electrical isolation when mounted to heatsink.
Pin 3 (S)	Source reference	Power return path and gate drive reference; forms low-inductance source loop critical for EMI control.
Tab (D)	Drain thermal & electrical path	Primary heat transfer surface; must be thermally coupled to heatsink while maintaining dielectric isolation ≥650 V RMS.

Key Features

Feature	Design Value
MDmesh M5 silicon process	Enables 90 mΩ RDS(on) at 650 V rating - 30% lower on-resistance than prior-generation 650 V Superjunction MOSFETs.
100% avalanche tested	Guarantees robustness under unclamped inductive switching events without derating - eliminates need for external snubbers in many PFC designs.
High dv/dt ruggedness (50 V/ns)	Prevents false turn-on during fast voltage transients in half-bridge leg commutation - improves reliability in high-frequency LLC resonant converters.
Low Q_gd/Q_g ratio (0.45)	Reduces Miller plateau duration and improves controllability during switching transitions - enhances ZVS/ZCS implementation margin.
Optimized body diode (Q_rr = 5.6 µC)	Minimizes reverse recovery loss and EMI generation in synchronous rectification and freewheeling paths of boost and flyback topologies.

Applications

Industrial SMPS

Server PSU

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers with active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, switching at 100–200 kHz with zero-voltage switching assistance.

Use Value: 110 mΩ RDS(on) limits conduction loss to <1.2 W at 18 A, while 50 V/ns dv/dt rating prevents spurious turn-on during transformer leakage spike recovery.

Use Scenario: PFC boost switch in 80 PLUS Titanium-certified 1.5 kW server power supplies.

IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) or continuous conduction mode (CCM) boost switch operating up to 300 kHz.

Use Value: 62.5 nC gate charge enables efficient drive with low-power gate drivers; 510 mJ EAS withstands line surge-induced avalanche events without derating.

Solar Inverter

EV Onboard Charger

Use Scenario: DC-DC isolation stage in string inverters using dual-active-bridge (DAB) topology with 600 V input.

IC Role / Device Role / Timing Role: High-side switch in H-bridge power stage, subject to repetitive 650 V blocking and fast 150 ns switching transitions.

Use Value: 350 ns body diode trr and low Qrr reduce dead-time losses and improve light-load efficiency; TO-247 package supports forced-air cooling at 28 A.

Use Scenario: Isolated DC-DC converter primary switch in 6.6 kW bidirectional OBC handling 400–800 V battery range.

IC Role / Device Role / Timing Role: Hard-switched primary FET in phase-shifted full-bridge, managing 520 V VDD stress with tight timing control.

Use Value: 0.66 °C/W RthJC allows 190 W dissipation with modest heatsinking; 17.7 A ID at TC = 100 °C supports sustained high-power charging cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB34N65M5	D²PAK package (RthJC = 0.66 °C/W), same RDS(on) and Qg specs; no TO-247 mechanical footprint.	Preferred for surface-mount PCB assembly; limited to lower peak current due to solder-joint thermal constraints vs. TO-247 screw-mount.	Select when automated SMT production, space-constrained layouts, or lower assembly cost outweigh discrete heatsink mounting requirements.
STP34N65M5	TO-220 package (RthJC = 0.66 °C/W), identical electrical specs but higher RthJA (62.5 °C/W); requires larger heatsink for same power.	Suitable for prototyping and low-volume industrial power supplies where through-hole assembly and manual heatsink mounting are acceptable.	Select for cost-sensitive, medium-power (<1.2 kW) applications where TO-220 mechanical robustness and serviceability are prioritized over thermal density.

Compared with STW34N65M5, STB34N65M5 offers identical silicon performance in a surface-mount D²PAK ideal for high-density power modules, while STP34N65M5 retains through-hole compatibility at the expense of thermal interface efficiency - both eliminate obsolescence risk without circuit redesign.

Availability

STW34N65M5 is available at Aetrix Electronics and suitable for industrial SMPS, server PSU, solar inverter, and EV onboard charger designs requiring stable component supply amid ongoing product discontinuation transitions.

Supply support for STW34N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh M5 Power MOSFET product line - engineered specifically for high-efficiency, high-voltage switching in server PSUs, telecom rectifiers, and renewable energy systems demanding low RDS(on) and high ruggedness.

FAQ

Is STW34N65M5 still in active production?

No. STMicroelectronics officially discontinued STW34N65M5 as of DS8915 Rev 5 (November 2025), removing it from active ordering channels. Current production focuses on STB34N65M5 (D²PAK) and STP34N65M5 (TO-220) as functional replacements with identical electrical specifications and MDmesh M5 silicon.

Can STB34N65M5 be used as a drop-in replacement for STW34N65M5?

Electrically yes - same V_DSS, R_DS(on), Q_g, and avalanche rating - but mechanically no: STB34N65M5 uses D²PAK (TO-263) with gull-wing leads, requiring PCB footprint redesign and requalification of thermal interface. No change to gate drive or protection circuitry is needed.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 17.7 A at T_C = 100 °C (Table 1). This reflects thermal derating due to junction-to-case resistance (0.66 °C/W) and maximum T_J = 150 °C limit. Operation above this current requires active cooling or reduced ambient temperature to maintain safe junction temperature.

Does STW34N65M5 include integrated gate protection?

No. STW34N65M5 has no integrated gate protection diode or Zener clamp. External gate-source protection (e.g., 18 V TVS) is required to limit V_GS to ±25 V absolute maximum, especially in high-dv/dt environments where Miller-induced overshoot may exceed ratings.

STW34N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW34N65M5 FAQ

1.How can I place an order for STW34N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW34N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW34N65M5 reliable?

The price and inventory of STW34N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW34N65M5 is usually 5 days.

3.What payment methods are accepted for STW34N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW34N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW34N65M5?

STW34N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW34N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW34N65M5?

For technical support, including STW34N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW34N65M5 requirements.

6.How does Aetrix verify that STW34N65M5 is sourced from the original manufacturer or authorized distributors?

All STW34N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW34N65M5 meets industry standards.

7.What is the process for return or replacement of STW34N65M5?

All STW34N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW34N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW34N65M5 part is unused and in its original packaging.

Return procedure for STW34N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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