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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW34NM60ND

Name: STW34NM60ND
Brand: STMicroelectronics
SKU: STW34NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW34NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW34NM60ND.pdf

Description:: MOSFET N-CH 600V 29A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW34NM60ND from STMicroelectronics is a single-channel N-channel 600 V, 34 A high-voltage power MOSFET in TO-247 package, featuring 150 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated ruggedness, and fast 35 ns turn-on delay time - deployed in industrial motor drives and offline SMPS primary-side switching.

For engineers reviewing the STW34NM60ND datasheet, STW34NM60ND pinout, STW34NM60ND application, or STW34NM60ND equivalent, key selection criteria include its 600 V blocking voltage, 34 A continuous drain current at T_C = 25 °C, low gate charge (65 nC), robust 100% unclamped inductive switching (UIS) rating, and thermal resistance of 0.55 °C/W junction-to-case.

Technical Context

This device uses ST's proprietary MDmesh™ II vertical superjunction technology to achieve ultra-low on-resistance while maintaining high voltage capability and fast switching performance. Its optimized gate structure reduces gate charge and improves dv/dt immunity.

The MOSFET supports hard-switched topologies up to 100 kHz and is qualified for industrial temperature range (–55 °C to +150 °C junction), with guaranteed 100% avalanche energy testing per JEDEC JESD24-11. It features an integrated fast-recovery body diode with 280 ns reverse recovery time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Enables use in universal-input offline SMPS and 400 V DC bus motor drives without derating.
I_D (continuous)	34 A at T_C = 25 °C - Supports ≥500 W continuous conduction mode (CCM) flyback or PFC stages.
R_DS(on) max	150 mΩ at V_GS = 10 V - Delivers <1.7 W conduction loss at 30 A, reducing heatsink requirements.
Q_g	65 nC - Enables efficient gate driving with standard 1 A peak drivers at ≤200 kHz switching.
E_AS	510 mJ - Fully rated avalanche energy ensures reliability in inductive load switching and fault transients.
t_r/t_f	35 ns / 65 ns - Minimizes switching losses in hard-switched converters operating up to 100 kHz.
R_thJC	0.55 °C/W - Allows direct mounting to aluminum heatsinks for thermally constrained industrial enclosures.

Pinout & Package

TO-247 package with isolated tab (drain-connected metal flange), offering low thermal resistance and high power dissipation capability. Mounting via M3 screw through central hole.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal flange; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for minimizing shoot-through risk in half-bridge configurations.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 Ω series gate resistor to damp ringing and control dV/dt.

Key Features

Feature	Design Value
100% Avalanche Tested	Guaranteed UIS robustness up to 510 mJ enables reliable operation under inductive fault conditions without external snubbers.
Ultra-Low Q_g/R_DS(on) Ratio	65 nC / 150 mΩ = 433 nC·Ω - Optimized trade-off for high-frequency efficiency in telecom and server PSUs.
Fast Body Diode	t_rr = 280 ns, Q_rr = 120 nC - Reduces dead-time losses and EMI in synchronous rectification and LLC resonant converters.
Enhanced dv/dt Immunity	Rated for 4.5 V/ns at V_DD = 400 V - Suppresses false turn-on in high-noise industrial environments with minimal gate clamping.
JEDEC Qualified	AEC-Q101 not claimed; qualified per industrial standards (IEC 60747-8) with 1000-hr HTRB and 1000-cycle TC testing.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase inverter stage in 1–3 kW HVAC compressors and pump controllers.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET-based 6-step commutation, handling 34 A peak phase current.

Use Value: Low R_DS(on) minimizes conduction loss at partial load; avalanche rating prevents failure during motor stall or short-circuit events.

Use Scenario: Primary-side switch in 800 W active-clamp forward or asymmetrical half-bridge server PSU.

IC Role / Device Role / Timing Role: Main power switch operating at 150–200 kHz with ZVS-assisted turn-on.

Use Value: Fast t_r/t_f and low Q_g reduce total switching loss by ≥18% vs. legacy planar MOSFETs, improving 50% load efficiency.

Industrial UPS Systems

EV Onboard Charger (OBC) Input Stage

Use Scenario: Bidirectional DC-DC isolation stage in 3 kVA line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch in dual-active-bridge topology.

Use Value: Fast body diode recovery eliminates need for external Schottky catch diodes, reducing BOM count and layout area.

Use Scenario: AC-DC PFC boost switch in 6.6 kW OBC with universal 90–264 VAC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) boost switch handling 34 A peak inductor current.

Use Value: 600 V rating allows single-stage PFC design without series stacking; 150 mΩ R_DS(on) maintains >98% peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH30N60P	R_DS(on) = 180 mΩ, Q_g = 72 nC, no avalanche rating specified	Lacks guaranteed UIS testing; requires external clamping in inductive loads	Prefer STW34NM60ND where fault robustness is mandatory (e.g., motor drives).
IPP60R190C7	R_DS(on) = 190 mΩ, Q_g = 43 nC, 650 V rating, CoolMOS™ C7 process	Lower gate charge but higher on-resistance; optimized for soft-switching topologies	Prefer IPP60R190C7 in resonant LLC designs; STW34NM60ND better for hard-switched PFC and inverters.

Compared with IXFH30N60P and IPP60R190C7, the STW34NM60ND delivers superior conduction efficiency at high current, proven avalanche ruggedness for industrial fault tolerance, and balanced gate drive dynamics ideal for both hard- and quasi-resonant topologies - making it optimal for cost-sensitive, high-reliability 600 V power stages.

Availability

STW34NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard charger input stages requiring stable component supply and long-term production continuity.

Supply support for STW34NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion systems operating up to 600 V.

FAQ

What is the maximum junction temperature rating for STW34NM60ND?

The absolute maximum junction temperature is +150 °C, with derated continuous drain current down to 22 A at T_C = 100 °C. The device is qualified per IEC 60747-8 for industrial temperature cycling and high-temperature reverse bias stress, ensuring stable operation in enclosed control cabinets.

Does STW34NM60ND require a negative gate voltage for reliable turn-off?

No - the device is fully enhanced-mode and turns off reliably with 0 V gate drive. However, applying –5 V enhances noise immunity in high-dv/dt environments; gate threshold voltage is specified at 2–4 V, with guaranteed turn-on at V_GS ≥ 10 V.

Can STW34NM60ND be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables stable current sharing. Parallel operation requires matched gate drive impedance (<5 Ω difference), symmetrical PCB layout, and individual gate resistors to prevent oscillation; ST recommends ≤3 devices in parallel for thermal uniformity.

Is the TO-247 package lead-free and RoHS-compliant?

Yes - STW34NM60ND is manufactured in a lead-free, halogen-free, RoHS-compliant TO-247 package per EU Directive 2011/65/EU and ST's ECOPACK®2 specifications, with matte tin plating on leads and compliant with JEDEC J-STD-020 moisture sensitivity level 1.

STW34NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80.4 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2785 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW34NM60ND FAQ

1.How can I place an order for STW34NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW34NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW34NM60ND reliable?

The price and inventory of STW34NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW34NM60ND is usually 5 days.

3.What payment methods are accepted for STW34NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW34NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW34NM60ND?

STW34NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW34NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW34NM60ND?

For technical support, including STW34NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW34NM60ND requirements.

6.How does Aetrix verify that STW34NM60ND is sourced from the original manufacturer or authorized distributors?

All STW34NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW34NM60ND meets industry standards.

7.What is the process for return or replacement of STW34NM60ND?

All STW34NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW34NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW34NM60ND part is unused and in its original packaging.

Return procedure for STW34NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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