STMicroelectronics STW35N60DM2

Overview

STW35N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in TO-247 package, featuring 600 V V_DS, 0.094 Ω typ. R_DS(on), 28 A continuous drain current, fast-recovery body diode (t_rr = 120 ns), and Zener-protected gate. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STW35N60DM2 datasheet, STW35N60DM2 pinout, STW35N60DM2 application, or STW35N60DM2 equivalent, key selection criteria include avalanche ruggedness (E_AS = 650 mJ), dv/dt immunity (50 V/ns), low Q_g (54 nC), C_oss,eq (190 pF), and integrated gate-source Zener protection (±30 V).

Technical Context

This MDmesh™ DM2 device uses optimized superjunction structure to simultaneously minimize conduction loss (R_DS(on) × Q_g figure-of-merit) and reverse recovery charge (Q_rr = 572 nC at T_j = 25 °C). Its fast-recovery body diode enables hard-switched and resonant topologies without external anti-parallel diodes.

The built-in back-to-back gate-source Zener diodes provide ±30 V breakdown protection, eliminating need for external clamping. Thermal resistance junction-to-case is 0.6 °C/W, supporting 210 W total dissipation at T_case = 25 °C with robust SOA up to 112 A pulsed drain current.

Key Specifications

Pinout & Package

TO-247 package: 3-terminal through-hole metal-can housing with isolated tab (drain-connected), standard lead spacing, and 0.6 °C/W thermal resistance junction-to-case. Mounting requires mechanical isolation unless drain is referenced to heatsink potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXFH30N60X and IPP60R099C7, STW35N60DM2 uniquely combines low R_DS(on), ultra-low Q_rr, gate Zener protection, and 50 V/ns dv/dt ruggedness-making it optimal for high-efficiency, high-reliability bridge and resonant converter designs where diode recovery and gate integrity are critical.

Availability

STW35N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server & telecom power supplies, renewable energy inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STW35N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ DM2 series targets high-efficiency, high-frequency power conversion systems-specifically engineered to replace IGBTs and older MOSFETs in bridge, PFC, and resonant topologies demanding low Q_rr, low R_DS(on), and robust avalanche capability.

FAQ

Is STW35N60DM2 suitable for zero-voltage switching (ZVS) topologies?

Yes. With C_oss,eq = 190 pF and low Q_g = 54 nC, STW35N60DM2 enables reliable ZVS turn-on in phase-shift full-bridge and LLC resonant converters operating at 100–300 kHz. Its fast body diode (t_rr = 120 ns) ensures clean commutation and minimizes dead-time losses without external diodes.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 17 A at T_case = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by R_thj-case = 0.6 °C/W and safe operating area constraints-not electrical degradation-and assumes adequate heatsinking and airflow.

Does STW35N60DM2 require an external gate protection circuit?

No. The device integrates back-to-back gate-source Zener diodes with ±30 V breakdown voltage, providing inherent ESD and overvoltage protection. External TVS devices are unnecessary unless system-level transients exceed ±30 V or demand redundancy beyond JEDEC HBM Class 2 requirements.

How does the fast-recovery body diode improve performance in half-bridge configurations?

The body diode's t_rr = 120 ns and Q_rr = 572 nC reduce reverse recovery loss and associated voltage spikes during high-di/dt commutation. This lowers EMI, improves efficiency by ~2–3% in hard-switched half-bridges, and eliminates need for parallel Schottky diodes in many 400–600 V applications.