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STMicroelectronics STW35N65DM2

Name: STW35N65DM2
Brand: STMicroelectronics
SKU: STW35N65DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW35N65DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW35N65DM2.pdf

Description:: MOSFET N-CH 650V 32A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW35N65DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 650 V V_DS, 93 mΩ typ. R_DS(on) at V_GS = 10 V, 32 A continuous drain current, fast-recovery body diode (t_rr = 100 ns @ T_J = 25 °C), and 100% avalanche tested. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STW35N65DM2 datasheet, STW35N65DM2 pinout, STW35N65DM2 application, or STW35N65DM2 equivalent, key selection criteria include low Q_rr (0.42 µC), ultra-low gate charge (Q_g = 56.3 nC), high dv/dt ruggedness (100 V/ns), and TO-247 thermal performance (R_thJC = 0.5 °C/W).

Technical Context

This device implements ST's MDmesh DM2 superjunction architecture optimized for high-voltage switching with minimized recovery losses. Its fast-recovery body diode achieves t_rr = 100 ns and Q_rr = 0.42 µC at 25 °C - critical for reducing switching loss in hard-commutated bridges.

The MOSFET delivers 100 V/ns dv/dt ruggedness and 1000 A/µs di/dt capability under defined test conditions (V_DD = 80% V_(BR)DSS, I_SD ≤ 32 A), enabling robust operation in noisy industrial power stages without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports primary-side switching in 400 V AC-input PFC and resonant LLC converters up to 800 V DC bus.
R_DS(on) max	110 mΩ - ensures <1.8 W conduction loss at 32 A, enabling high-power density designs with minimal heatsinking.
Q_g	56.3 nC - reduces gate drive power and enables use of lower-cost, lower-current drivers in high-frequency (>100 kHz) applications.
t_rr	100 ns @ 25 °C - minimizes reverse recovery energy loss during commutation, essential for ZVS soft-switching reliability.
dv/dt ruggedness	100 V/ns - withstands rapid voltage transients in motor drives and inverters without spurious turn-on or latch-up.
E_AS	1150 mJ - provides single-pulse unclamped inductive switching margin for protection against load dump or short-circuit events.
R_thJC	0.5 °C/W - allows 250 W dissipation at 25 °C case temperature, supporting high-power operation with standard TO-247 heatsink mounting.

Pinout & Package

Package: TO-247 (ECOPACK® compliant), with isolated tab (Drain-connected), metal tab thermally and electrically tied to Drain (Pin 2). Standard 3-pin through-hole configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Low-impedance control terminal; requires <56.3 nC charge for full enhancement; RG = 4.7 Ω yields td(on) = 23.4 ns.
Pin 2 (D / TAB)	Drain (and thermal pad)	High-voltage power terminal; electrically and thermally connected to metal tab; must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return path and gate reference node; carries full load current (32 A continuous); forms common source node in half-bridge configurations.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 100 ns and Q_rr = 0.42 µC at 25 °C - cuts diode recovery loss by >60% vs standard 650 V MOSFETs in synchronous rectification.
Extremely low gate charge	Q_g = 56.3 nC - enables 300 kHz+ operation with <1 W gate driver loss using discrete bipolar or low-power IC drivers.
100% avalanche tested	E_AS = 1150 mJ - guarantees ruggedness against inductive energy spikes without derating, eliminating need for external clamping in many SMPS designs.
Zener-protected gate	V_GS rating ±25 V (static), ±30 V (AC) - prevents gate oxide failure during ESD events or transient coupling in high-noise environments.
High dv/dt immunity	100 V/ns rated - suppresses false turn-on in high-side bridge legs even with steep edge rates in SiC/GaN co-designs.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Three-phase inverter stage in 5–15 kW servo drives operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT-replacement topology; body diode conducts freewheeling current during dead-time.

Use Value: Low Q_rr and t_rr reduce switching loss by 35% vs legacy 650 V MOSFETs, enabling higher efficiency and smaller heatsinks.

Use Scenario: Primary-side switch in 3.5 kW LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: ZVS-capable main switch; operates in soft-switching region where low C_oss (115 pF) and fast diode minimize turn-on loss.

Use Value: C_oss eq. = 204 pF over 0–520 V enables predictable ZVS boundary and stable light-load regulation.

Renewable Energy Inverters

EV On-Board Charger (OBC)

Use Scenario: DC-AC H-bridge in 5 kW string solar inverter with transformerless topology.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch handling 1000 V DC input; body diode blocks reverse current during anti-parallel conduction.

Use Value: 100% avalanche rating ensures survival during PV string fault transients without crowbar circuitry.

Use Scenario: Active clamp flyback or dual-active-bridge switch in 11 kW bidirectional OBC.

IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) power switch requiring low Q_g and low R_DS(on) to meet EU Tier 2 efficiency targets.

Use Value: 93 mΩ R_DS(on) and 56.3 nC Q_g deliver >98.2% peak efficiency at 200 kHz, meeting WLTP cycle requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R090CFD7	R_DS(on) = 90 mΩ, Q_rr = 0.32 µC, t_rr = 75 ns - lower recovery charge but no Zener gate protection.	Better suited for ultra-high-frequency (>500 kHz) resonant converters where Q_rr dominates loss.	Select when minimizing diode recovery loss is priority and gate transient immunity is managed externally.
IXTH30N65X2	R_DS(on) = 125 mΩ, Q_g = 42 nC, t_rr = 130 ns - higher on-resistance but superior SOA and higher I_D pulse rating (120 A).	Preferred in high-pulse-current industrial UPS where short-circuit robustness outweighs conduction loss.	Choose for mission-critical backup systems requiring extended safe operating area beyond 10 ms pulses.

Compared with IPW65R090CFD7 and IXTH30N65X2, STW35N65DM2 uniquely balances low Q_rr, Zener gate protection, and 100 V/ns dv/dt ruggedness - making it optimal for cost-sensitive, high-reliability bridge topologies where both switching efficiency and fault tolerance matter.

Availability

STW35N65DM2 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and EV on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for STW35N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for industrial, automotive, and consumer markets.

STW35N65DM2 belongs to the MDmesh™ DM2 family - designed specifically for high-efficiency, high-voltage power conversion in telecom, server, solar, and EV charging applications where low Q_rr and ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW35N65DM2 supports 20 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12247 Rev 4. This derating reflects thermal limits of the TO-247 package and junction-to-case thermal resistance of 0.5 °C/W, ensuring reliable operation within the 150 °C maximum junction temperature.

Does the body diode require external anti-parallel diode supplementation?

No - the integrated fast-recovery body diode has t_rr = 100 ns and Q_rr = 0.42 µC at 25 °C, validated for hard-switched bridge operation. ST specifies it for use without external diodes in ZVS and phase-shifted full-bridge topologies per application note AN4765.

Is the TO-247 package lead-free and RoHS-compliant?

Yes - STW35N65DM2 is supplied in an ECOPACK®-compliant TO-247 package meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, with lead-free terminations and halogen-free molding compound per ST's ECOPACK2 specification.

How does the 100% avalanche testing impact design margin?

Each unit undergoes single-pulse avalanche stress at I_AR = 4 A and E_AS = 1150 mJ, verifying robustness against unclamped inductive switching events. This eliminates the need for safety factor derating in motor drive or UPS designs where load dump or short-circuit faults may occur.

STW35N65DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56.3 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2540 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW35N65DM2 FAQ

1.How can I place an order for STW35N65DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW35N65DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW35N65DM2 reliable?

The price and inventory of STW35N65DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW35N65DM2 is usually 5 days.

3.What payment methods are accepted for STW35N65DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW35N65DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW35N65DM2?

STW35N65DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW35N65DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW35N65DM2?

For technical support, including STW35N65DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW35N65DM2 requirements.

6.How does Aetrix verify that STW35N65DM2 is sourced from the original manufacturer or authorized distributors?

All STW35N65DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW35N65DM2 meets industry standards.

7.What is the process for return or replacement of STW35N65DM2?

All STW35N65DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STW35N65DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW35N65DM2 part is unused and in its original packaging.

Return procedure for STW35N65DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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