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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW35N65M5

Name: STW35N65M5
Brand: STMicroelectronics
SKU: STW35N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW35N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW35N65M5.pdf

Description:: MOSFET N-CH 650V 27A TO247-3

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Product details

Overview

STW35N65M5 from STMicroelectronics is an N-channel 650 V, 85 mΩ typ. (98 mΩ max.), 27 A MDmesh™ M5 Power MOSFET in D²PAK (TO-263) package, optimized for high-efficiency hard-switching and ZVS/ZCS topologies in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STW35N65M5 datasheet, STW35N65M5 pinout, STW35N65M5 application, or STW35N65M5 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 15 V/ns dv/dt capability, 100% avalanche-rated ruggedness, and low Q_gd/Q_g ratio for fast switching with reduced EMI.

Technical Context

This device leverages ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) × area while maintaining high V_DSS and robust dv/dt immunity. Its 15 V/ns peak diode recovery voltage slope supports reliable operation under fast commutation stress.

The integrated body diode exhibits 360 ns reverse recovery time (T_J = 25 °C) and 7 µC Q_rr, enabling efficient operation in bridge configurations without external SiC diodes in many mid-power designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V nominal with ≥1.6× safety margin in 3-phase rectified systems.
R_DS(on) max	98 mΩ at V_GS = 10 V, I_D = 13.5 A - Enables <1.3 W conduction loss at 20 A, critical for thermal management in sealed enclosures.
I_D continuous	27 A at T_C = 25 °C - Supports 500–800 W power stages with standard heatsinking and forced air.
E_AS	800 mJ single-pulse avalanche energy - Allows unclamped inductive switching without external snubbers in motor drive fault conditions.
Q_gd	35 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk and enables >100 kHz operation with 4.7 Ω gate resistor.
dv/dt rating	15 V/ns - Ensures noise-immune gate control during fast voltage transients in high-side half-bridge configurations.
R_thJC	0.78 °C/W - Enables junction-to-case temperature rise of ≤40 °C at 160 W dissipation, supporting compact thermal design.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for direct heatsink mounting; thermally enhanced plastic surface-mount outline compliant with JEDEC MO-211AD.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current path output / heat transfer interface	Electrically connected to drain; must be isolated from chassis unless system ground-referenced; primary thermal path to heatsink.
Pin 1 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage current; sensitive to ESD; routed with controlled impedance and short trace.
Pin 3 (Source)	Reference node / return path	Common reference for gate drive and load current; must be low-inductance connection to minimize V_GS ringing during switching.

Key Features

Feature	Design Value
MDmesh M5 superjunction structure	Delivers 85 mΩ typ. R_DS(on) at 650 V - 30% lower on-resistance than prior-generation 650 V MOSFETs in same package.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 800 mJ - Eliminates need for overvoltage clamping in flyback and resonant converters.
Low Q_gd/Q_g ratio	35 nC / 83 nC = 0.42 - Reduces Miller plateau duration and improves controllability during turn-off transition.
Enhanced dv/dt immunity	15 V/ns rated - Prevents false turn-on in high-side configurations with fast-rising V_DS edges.
Optimized body diode	Q_rr = 7 µC, t_rr = 360 ns - Enables efficient synchronous rectification replacement in LLC secondaries without added complexity.

Applications

Industrial Switch-Mode Power Supplies

Three-Phase PFC Front Ends

Use Scenario: Primary-side switch in 1–2 kW telecom/industrial AC-DC supplies operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates in hard-switched forward or LLC resonant mode.

Use Value: 98 mΩ R_DS(on) reduces conduction losses by ~22% vs. legacy 650 V MOSFETs, improving full-load efficiency from 92.5% to 94.1%.

Use Scenario: Boost switch in active three-phase PFC for UPS and server PSUs handling 3 kW–5 kW.

IC Role / Device Role / Timing Role: Fast-turning main switch in interleaved boost stage; handles line-frequency current ripple and high dv/dt during zero-crossings.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during phase commutation; 800 mJ E_AS withstands inductive kickback during grid fault events.

Solar Microinverters

Motor Drive Half-Bridges

Use Scenario: DC-AC H-bridge switch in 250–500 W microinverters interfacing PV panels to single-phase grid.

IC Role / Device Role / Timing Role: Low-loss, high-reliability switching element in full-bridge topology; subjected to repetitive unclamped inductive stress.

Use Value: 100% avalanche testing ensures survival under partial shading-induced current mismatch faults without external protection.

Use Scenario: Upper-leg switch in 750 W–1.5 kW BLDC or induction motor drives using 6-step commutation.

IC Role / Device Role / Timing Role: High-side power switch subject to bootstrapped gate drive and fast V_DS transitions during PWM dead-time.

Use Value: Low Q_gd (35 nC) suppresses Miller-induced shoot-through; 0.78 °C/W R_thJC allows 100% duty-cycle operation with minimal heatsink mass.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB35N65M5	Identical die, D²PAK package, same R_DS(on) and avalanche rating; marking "35N65M5".	No functional difference; used interchangeably in board-level designs with identical footprint.	Select when sourcing from alternate ST distribution channels or where STB prefix is specified in BOM.
IPW65R095C7	Infineon CoolMOS C7: 95 mΩ max., 650 V, but higher Q_gd (42 nC) and lower dv/dt rating (10 V/ns).	Requires larger gate resistor to suppress oscillation; less suitable for high-dv/dt environments like motor drives.	Prefer only if existing design uses Infineon ecosystem or requires specific gate threshold compatibility (V_GS(th) = 2.5–3.5 V).

Compared with STB35N65M5, this part offers identical performance and drop-in compatibility; versus IPW65R095C7, it delivers superior dv/dt immunity and lower switching losses due to 20% lower Q_gd, making it more robust in noisy industrial environments.

Availability

STW35N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, three-phase PFC front ends, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for STW35N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications.

This device belongs to the MDmesh M5 high-voltage power MOSFET product line, engineered specifically for efficiency-critical 600–650 V switching applications in industrial power conversion and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW35N65M5 supports 17 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6068 Rev 4. This derating reflects thermal limits of the D²PAK package and ensures safe operation within the SOA boundary at elevated ambient temperatures.

Does this MOSFET require a negative gate turn-off voltage?

No. The device has a gate threshold voltage range of 3–5 V and is fully compatible with 0 V to +10 V or +12 V gate drive. Negative turn-off voltage is not required or recommended; standard TTL- or CMOS-compatible drivers suffice.

Is the body diode suitable for synchronous rectification?

Yes - its 360 ns reverse recovery time and 7 µC Q_rr at 27 A enable use in secondary-side synchronous rectification of LLC resonant converters up to 200 kHz, though discrete Schottky diodes remain preferred above 300 kHz due to lower Q_rr.

What is the gate input resistance value?

The gate input resistance is 1.6 Ω, measured at 1 MHz with open-drain configuration (Table 5, DS6068 Rev 4). This low value simplifies gate driver selection and reduces sensitivity to PCB trace inductance during fast switching transitions.

STW35N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 98mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3750 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW35N65M5 FAQ

1.How can I place an order for STW35N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW35N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW35N65M5 reliable?

The price and inventory of STW35N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW35N65M5 is usually 5 days.

3.What payment methods are accepted for STW35N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW35N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW35N65M5?

STW35N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW35N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW35N65M5?

For technical support, including STW35N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW35N65M5 requirements.

6.How does Aetrix verify that STW35N65M5 is sourced from the original manufacturer or authorized distributors?

All STW35N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW35N65M5 meets industry standards.

7.What is the process for return or replacement of STW35N65M5?

All STW35N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW35N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW35N65M5 part is unused and in its original packaging.

Return procedure for STW35N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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