STMicroelectronics STW36N55M5
- Part No.:
- STW36N55M5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW36N55M5.pdf
- Description:
- MOSFET N-CH 550V 33A TO247
- Quantity:
- Payment:

- Shipping:

Inventory:2,274
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Product details
Overview
STW36N55M5 from STMicroelectronics is an N-channel 550 V, 33 A MDmesh™ V Power MOSFET in TO-247 package with 0.06 Ω typ. RDS(on), 150 °C max junction temperature, and 100% avalanche tested - used as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STW36N55M5 datasheet, STW36N55M5 pinout, STW36N55M5 application, or STW36N55M5 equivalent, key selection criteria include its 550 V VDSS, low gate charge (62 nC), fast switching (13 ns tr/tf), and robust 510 mJ single-pulse avalanche energy rating.
Technical Context
This MOSFET employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading RDS(on) × area efficiency. Its 550 V breakdown voltage supports 400 V bus applications with margin, and its 15 V/ns dv/dt capability ensures noise-immune operation in hard-switched converters.
The device features a fully rated source-drain diode with 334 ns reverse recovery time at 25 °C and 406 ns at 150 °C, enabling use in synchronous rectification and freewheeling paths where controlled body-diode conduction is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 550 V - supports 400 V DC-link designs with 37.5 % voltage margin for transient surges |
| RDS(on) typ. | 0.06 Ω @ VGS = 10 V, ID = 16.5 A - enables <1 W conduction loss at 20 A, critical for high-efficiency PFC |
| ID cont. @ TC = 100 °C | 20.8 A - defines usable current in thermally constrained heatsink environments |
| EAS | 510 mJ - guarantees safe unclamped inductive switching up to 7 A avalanche current without failure |
| Qg | 62 nC - determines gate drive power requirement and switching speed control in 100–500 kHz converters |
| tr/tf | 13 ns each @ VDD = 400 V, ID = 22 A, RG = 4.7 Ω - enables fast turn-on/turn-off with minimal overlap loss |
| Rthj-case | 0.66 °C/W - sets minimum heatsink thermal resistance needed to maintain Tj ≤ 150 °C at full load |
Pinout & Package
STW36N55M5 is housed in a TO-247 package with three terminals: Drain (Tab), Source (Pin 1), and Gate (Pin 2). The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Main high-side current path | Electrically tied to internal die drain; must be insulated from chassis/heatsink unless referenced to system ground |
| Pin 1 (Source) | Reference node for gate drive and current sensing | Serves as return path for load current and reference for gate-source voltage; connects to low-side shunt or controller ground |
| Pin 2 (Gate) | Control input for channel conduction | Receives 10 V logic-level drive; requires <62 nC charge for full enhancement; sensitive to ESD and ringing |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ V + PowerMESH™ integration | Delivers lowest RDS(on) × area among silicon MOSFETs at 550 V, enabling smaller PCB footprints in high-density power supplies |
| 100% avalanche tested | Guarantees ruggedness under unclamped inductive switching - eliminates need for external snubbers in flyback or LLC resonant converters |
| High dv/dt immunity (15 V/ns) | Prevents false turn-on during fast voltage transients in bridge-leg configurations, improving reliability in half-bridge topologies |
| Low Qgd/Qg ratio (0.44) | Reduces Miller plateau duration and improves controllability during hard switching, minimizing shoot-through risk |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
Use Scenario: High-efficiency 3 kW inverter stage driving 3-phase induction motors in HVAC compressors. IC Role / Device Role / Timing Role: Main switching device in 20 kHz hard-switched inverter leg, handling 33 A peak phase current. Use Value: 0.06 Ω RDS(on) reduces conduction loss by 35 % vs legacy 500 V MOSFETs, directly improving system efficiency from 94.2 % to 95.6 %. | Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW server power supply using active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element operating at 250 kHz with 400 V DC input. Use Value: 510 mJ EAS withstands clamping energy spikes without derating, enabling compact magnetic design and eliminating auxiliary protection circuits. |
| Telecom Rectifier Modules | EV Onboard Charger PFC Stage |
Use Scenario: Boost PFC switch in -48 V telecom rectifier delivering 3 kW output with universal AC input. IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) boost switch handling 33 A peak current at 100 kHz. Use Value: Low Qg (62 nC) and fast tr/tf (13 ns) reduce gate drive losses and enable stable CrCM operation across line/load range. | Use Scenario: Interleaved boost PFC stage in 11 kW OBC converting 230 V AC to 400 V DC battery bus. IC Role / Device Role / Timing Role: High-reliability switching device operating continuously at 65 °C case temperature. Use Value: Rthj-case of 0.66 °C/W allows direct mounting on aluminum cold plate, reducing thermal interface layers and system BOM cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH30N50L | 500 V VDSS, 0.095 Ω RDS(on), TO-247, no avalanche rating | Limited to 350 V DC-link; requires external avalanche protection in unclamped inductive circuits | Select only if operating voltage stays below 350 V and avalanche stress is absent |
| IPP60R099C7 | 600 V VDSS, 0.099 Ω RDS(on), TO-220FP, 650 V avalanche rating | Higher RDS(on) increases conduction loss; TO-220FP limits power dissipation to 130 W | Prefer for space-constrained designs where 600 V margin outweighs efficiency penalty |
Compared with IXTH30N50L and IPP60R099C7, STW36N55M5 uniquely balances 550 V rating, ultra-low 0.06 Ω on-resistance, and guaranteed avalanche ruggedness - making it optimal for high-power, high-reliability 400 V bus systems where thermal and transient margins are critical.
Availability
STW36N55M5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.
Supply support for STW36N55M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STW36N55M5 belongs to the MDmesh™ V Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and industrial inverters demanding best-in-class RDS(on) and ruggedness.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STW36N55M5 supports 20.8 A continuous drain current at TC = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 022902 Rev 2). This rating assumes proper heatsinking and accounts for RDS(on) increase with temperature, ensuring safe operation without exceeding 150 °C junction limit.
Does STW36N55M5 have an integrated body diode, and what are its recovery characteristics?
Yes, STW36N55M5 includes a monolithic source-drain body diode rated for 33 A continuous and 132 A pulsed current. Its reverse recovery time is 334 ns at 25 °C and 406 ns at 150 °C, with 5 µC Qrr at 25 °C - values measured under standardized conditions (ISD = 33 A, di/dt = 100 A/µs, VDD = 100 V).
Can STW36N55M5 be used in zero-voltage switching (ZVS) topologies?
Yes - its low Coss (75 pF) and Co(er) (71 pF), combined with 62 nC total gate charge, support reliable ZVS operation in LLC resonant converters up to 500 kHz. The device's 15 V/ns dv/dt immunity prevents spurious turn-on during resonant transitions, a key requirement for stable ZVS behavior.
Is the TO-247 package lead-free and RoHS compliant?
Yes, STW36N55M5 is manufactured in an ECOPACK®-compliant TO-247 package meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. ST's official ECOPACK documentation confirms full lead-free termination finish and halogen-free molding compound for this part number.
STW36N55M5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ V
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 550 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2950 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW36N55M5 FAQ
1.How can I place an order for STW36N55M5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STW36N55M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW36N55M5 reliable?
The price and inventory of STW36N55M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW36N55M5 is usually 5 days.
3.What payment methods are accepted for STW36N55M5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW36N55M5 transactions.
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4.How is shipping managed for STW36N55M5?
STW36N55M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW36N55M5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW36N55M5?
For technical support, including STW36N55M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW36N55M5 requirements.
6.How does Aetrix verify that STW36N55M5 is sourced from the original manufacturer or authorized distributors?
All STW36N55M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW36N55M5 meets industry standards.
7.What is the process for return or replacement of STW36N55M5?
All STW36N55M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW36N55M5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW36N55M5 part is unused and in its original packaging.
Return procedure for STW36N55M5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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