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STMicroelectronics STW36N55M5

Part No.:
STW36N55M5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTW36N55M5.pdf
Description:
MOSFET N-CH 550V 33A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,274

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Product details

Overview

STW36N55M5 from STMicroelectronics is an N-channel 550 V, 33 A MDmesh™ V Power MOSFET in TO-247 package with 0.06 Ω typ. RDS(on), 150 °C max junction temperature, and 100% avalanche tested - used as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STW36N55M5 datasheet, STW36N55M5 pinout, STW36N55M5 application, or STW36N55M5 equivalent, key selection criteria include its 550 V VDSS, low gate charge (62 nC), fast switching (13 ns tr/tf), and robust 510 mJ single-pulse avalanche energy rating.

Technical Context

This MOSFET employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading RDS(on) × area efficiency. Its 550 V breakdown voltage supports 400 V bus applications with margin, and its 15 V/ns dv/dt capability ensures noise-immune operation in hard-switched converters.

The device features a fully rated source-drain diode with 334 ns reverse recovery time at 25 °C and 406 ns at 150 °C, enabling use in synchronous rectification and freewheeling paths where controlled body-diode conduction is required.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS550 V - supports 400 V DC-link designs with 37.5 % voltage margin for transient surges
RDS(on) typ.0.06 Ω @ VGS = 10 V, ID = 16.5 A - enables <1 W conduction loss at 20 A, critical for high-efficiency PFC
ID cont. @ TC = 100 °C20.8 A - defines usable current in thermally constrained heatsink environments
EAS510 mJ - guarantees safe unclamped inductive switching up to 7 A avalanche current without failure
Qg62 nC - determines gate drive power requirement and switching speed control in 100–500 kHz converters
tr/tf13 ns each @ VDD = 400 V, ID = 22 A, RG = 4.7 Ω - enables fast turn-on/turn-off with minimal overlap loss
Rthj-case0.66 °C/W - sets minimum heatsink thermal resistance needed to maintain Tj ≤ 150 °C at full load

Pinout & Package

STW36N55M5 is housed in a TO-247 package with three terminals: Drain (Tab), Source (Pin 1), and Gate (Pin 2). The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
Tab (Drain)Main high-side current pathElectrically tied to internal die drain; must be insulated from chassis/heatsink unless referenced to system ground
Pin 1 (Source)Reference node for gate drive and current sensingServes as return path for load current and reference for gate-source voltage; connects to low-side shunt or controller ground
Pin 2 (Gate)Control input for channel conductionReceives 10 V logic-level drive; requires <62 nC charge for full enhancement; sensitive to ESD and ringing

Key Features

FeatureDesign Value
MDmesh™ V + PowerMESH™ integrationDelivers lowest RDS(on) × area among silicon MOSFETs at 550 V, enabling smaller PCB footprints in high-density power supplies
100% avalanche testedGuarantees ruggedness under unclamped inductive switching - eliminates need for external snubbers in flyback or LLC resonant converters
High dv/dt immunity (15 V/ns)Prevents false turn-on during fast voltage transients in bridge-leg configurations, improving reliability in half-bridge topologies
Low Qgd/Qg ratio (0.44)Reduces Miller plateau duration and improves controllability during hard switching, minimizing shoot-through risk

Applications

Industrial Motor DrivesServer PSU Primary Switch

Use Scenario: High-efficiency 3 kW inverter stage driving 3-phase induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: Main switching device in 20 kHz hard-switched inverter leg, handling 33 A peak phase current.

Use Value: 0.06 Ω RDS(on) reduces conduction loss by 35 % vs legacy 500 V MOSFETs, directly improving system efficiency from 94.2 % to 95.6 %.

Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW server power supply using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element operating at 250 kHz with 400 V DC input.

Use Value: 510 mJ EAS withstands clamping energy spikes without derating, enabling compact magnetic design and eliminating auxiliary protection circuits.

Telecom Rectifier ModulesEV Onboard Charger PFC Stage

Use Scenario: Boost PFC switch in -48 V telecom rectifier delivering 3 kW output with universal AC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) boost switch handling 33 A peak current at 100 kHz.

Use Value: Low Qg (62 nC) and fast tr/tf (13 ns) reduce gate drive losses and enable stable CrCM operation across line/load range.

Use Scenario: Interleaved boost PFC stage in 11 kW OBC converting 230 V AC to 400 V DC battery bus.

IC Role / Device Role / Timing Role: High-reliability switching device operating continuously at 65 °C case temperature.

Use Value: Rthj-case of 0.66 °C/W allows direct mounting on aluminum cold plate, reducing thermal interface layers and system BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXTH30N50L500 V VDSS, 0.095 Ω RDS(on), TO-247, no avalanche ratingLimited to 350 V DC-link; requires external avalanche protection in unclamped inductive circuitsSelect only if operating voltage stays below 350 V and avalanche stress is absent
IPP60R099C7600 V VDSS, 0.099 Ω RDS(on), TO-220FP, 650 V avalanche ratingHigher RDS(on) increases conduction loss; TO-220FP limits power dissipation to 130 WPrefer for space-constrained designs where 600 V margin outweighs efficiency penalty

Compared with IXTH30N50L and IPP60R099C7, STW36N55M5 uniquely balances 550 V rating, ultra-low 0.06 Ω on-resistance, and guaranteed avalanche ruggedness - making it optimal for high-power, high-reliability 400 V bus systems where thermal and transient margins are critical.

Availability

STW36N55M5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for STW36N55M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW36N55M5 belongs to the MDmesh™ V Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and industrial inverters demanding best-in-class RDS(on) and ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW36N55M5 supports 20.8 A continuous drain current at TC = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 022902 Rev 2). This rating assumes proper heatsinking and accounts for RDS(on) increase with temperature, ensuring safe operation without exceeding 150 °C junction limit.

Does STW36N55M5 have an integrated body diode, and what are its recovery characteristics?

Yes, STW36N55M5 includes a monolithic source-drain body diode rated for 33 A continuous and 132 A pulsed current. Its reverse recovery time is 334 ns at 25 °C and 406 ns at 150 °C, with 5 µC Qrr at 25 °C - values measured under standardized conditions (ISD = 33 A, di/dt = 100 A/µs, VDD = 100 V).

Can STW36N55M5 be used in zero-voltage switching (ZVS) topologies?

Yes - its low Coss (75 pF) and Co(er) (71 pF), combined with 62 nC total gate charge, support reliable ZVS operation in LLC resonant converters up to 500 kHz. The device's 15 V/ns dv/dt immunity prevents spurious turn-on during resonant transitions, a key requirement for stable ZVS behavior.

Is the TO-247 package lead-free and RoHS compliant?

Yes, STW36N55M5 is manufactured in an ECOPACK®-compliant TO-247 package meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. ST's official ECOPACK documentation confirms full lead-free termination finish and halogen-free molding compound for this part number.

STW36N55M5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ V
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
550 V
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
80mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
2950 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
190W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

STW36N55M5 FAQ

1.How can I place an order for STW36N55M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW36N55M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW36N55M5 reliable?

The price and inventory of STW36N55M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW36N55M5 is usually 5 days.

3.What payment methods are accepted for STW36N55M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW36N55M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW36N55M5?

STW36N55M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW36N55M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW36N55M5?

For technical support, including STW36N55M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW36N55M5 requirements.

6.How does Aetrix verify that STW36N55M5 is sourced from the original manufacturer or authorized distributors?

All STW36N55M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW36N55M5 meets industry standards.

7.What is the process for return or replacement of STW36N55M5?

All STW36N55M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW36N55M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW36N55M5 part is unused and in its original packaging.

Return procedure for STW36N55M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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