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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW36N60M6

Name: STW36N60M6
Brand: STMicroelectronics
SKU: STW36N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW36N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW36N60M6.pdf

Description:: MOSFET N-CHANNEL 600V 30A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW36N60M6 from STMicroelectronics is an N-channel 600 V, 30 A, 99 mΩ typ. MDmesh™ M6 Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant topologies in industrial power supplies, motor drives, and PFC stages. It features 100% avalanche tested ruggedness, Zener-protected gate, and low gate input resistance.

For engineers reviewing the STW36N60M6 datasheet, STW36N60M6 pinout, STW36N60M6 application, or STW36N60M6 equivalent, key selection criteria include R_DS(on) at 10 V, E_AS = 750 mJ, dv/dt ruggedness of 50 V/ns, C_iss = 1960 pF, and thermal resistance R_thj-case = 0.6 °C/W.

Technical Context

This MOSFET employs ST's MDmesh™ M6 superjunction technology to achieve optimized trade-offs between conduction loss (R_DS(on) × area) and switching performance. Its 85 mΩ typ. R_DS(on) at V_GS = 10 V and low Q_gd/Q_g ratio (25 nC / 44.3 nC) support fast, low-loss turn-off in high-frequency converters.

The device integrates a robust body diode with t_rr = 340 ns (T_j = 25 °C) and Q_rr = 5.3 μC, enabling reliable operation in bridge configurations. Its 50 V/ns MOSFET dv/dt ruggedness and 15 V/ns diode recovery dv/dt rating ensure stable behavior under fast transient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus and universal AC-input offline SMPS
R_DS(on) max	99 mΩ @ V_GS = 10 V, T_C = 25 °C - enables <1.5 W conduction loss at 30 A continuous drain current
I_D cont	30 A @ T_C = 25 °C - rated for high-current output stages with heatsink mounting
E_AS	750 mJ - withstands unclamped inductive switching events without failure
Q_g	44.3 nC - determines gate drive power requirement and switching speed in 100–300 kHz designs
R_thj-case	0.6 °C/W - allows 208 W dissipation at ΔT = 125 °C, supporting high-power density layouts
t_rr	340 ns @ T_j = 25 °C - limits diode reverse recovery loss in synchronous rectification and half-bridge operation

Pinout & Package

STW36N60M6 is housed in a TO-247 package with three terminals: Drain (Tab), Source (Pin 1), and Gate (Pin 2). The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main high-voltage current path	Electrically tied to internal die drain; must be insulated from chassis/ground unless referenced to high-side potential
Pin 1 (Source)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source connection in precision current monitoring
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <1.6 Ω intrinsic gate resistance; sensitive to ESD and ringing

Key Features

Feature	Design Value
MDmesh™ M6 superjunction architecture	Delivers 85 mΩ typ. R_DS(on) with 1960 pF C_iss, improving power density vs prior MDmesh generations
100% avalanche tested	Guarantees single-pulse E_AS ≥ 750 mJ across production lot, eliminating need for external snubbers in flyback/PFC
Zener-protected gate	Integrates gate-source clamp diode to limit V_GS to ±25 V, preventing oxide rupture during transients
Low gate input resistance	1.6 Ω intrinsic R_G reduces gate driver power loss and improves control loop stability
Enhanced dv/dt ruggedness	50 V/ns MOSFET-rated dv/dt ensures reliable operation in noisy high-dV/dt environments like motor drives

Applications

Industrial Switch-Mode Power Supplies

Three-Phase Motor Drives

Use Scenario: Primary-side switch in 1–3 kW telecom and server PSUs operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in LLC resonant and hard-switched forward topologies.

Use Value: Low R_DS(on) and C_oss reduce conduction and capacitive switching losses, enabling >95% efficiency at full load.

Use Scenario: Upper-leg IGBT/MOSFET replacement in 7.5–15 kW variable-frequency drives.

IC Role / Device Role / Timing Role: High-side switching device in three-phase inverter leg with 600 V DC bus.

Use Value: Avalanche ruggedness and 50 V/ns dv/dt rating prevent shoot-through and false triggering during bus transients.

Active PFC Boost Converters

Induction Heating Systems

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for industrial equipment.

IC Role / Device Role / Timing Role: Fast-turning, low-loss switch handling 30 A peak inductor current at 65–100 kHz.

Use Value: Low Q_gd/Q_g ratio minimizes Miller-induced delay, supporting tight duty-cycle control and THD reduction.

Use Scenario: Half-bridge switch in 20–100 kHz resonant tank circuits for cooktops and industrial heating.

IC Role / Device Role / Timing Role: High-reliability switching device subjected to repetitive unclamped inductive stress.

Use Value: 750 mJ E_AS rating eliminates need for external clamping, simplifying layout and improving thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH30N60P3	R_DS(on) = 120 mΩ, Q_g = 52 nC, E_AS = 520 mJ, TO-247	Higher conduction loss and lower avalanche energy; less suitable for high-reliability PFC	Prefer for cost-sensitive, lower-stress 600 V applications where E_AS margin is relaxed
IPP60R099C7	R_DS(on) = 99 mΩ, Q_g = 51 nC, E_AS = 620 mJ, TO-247	Similar R_DS(on) but higher Q_g and lower E_AS; no Zener gate protection	Select when Infineon's CoolMOS™ C7 platform integration is required; verify gate drive robustness

Compared with IXFH30N60P3 and IPP60R099C7, STW36N60M6 offers superior avalanche immunity (750 mJ), integrated Zener gate protection, and lower Q_g, making it preferred for mission-critical industrial PFC and motor drive inverters where reliability under transient stress is non-negotiable.

Availability

STW36N60M6 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, three-phase motor drives, and active PFC boost converters requiring stable component supply and long-term manufacturing continuity.

Supply support for STW36N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STW36N60M6 belongs to the MDmesh™ M6 family-engineered specifically for high-efficiency, high-reliability 600 V power conversion in industrial SMPS, motor controls, and renewable energy systems.

FAQ

What is the maximum continuous drain current for STW36N60M6 at 100 °C case temperature?

The maximum continuous drain current is 19 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package and must be applied in thermal design to maintain junction temperature below 150 °C under sustained load.

Does STW36N60M6 require external gate protection?

No. STW36N60M6 integrates a Zener diode between gate and source, clamping V_GS to ±25 V. This eliminates the need for external gate protection components in most applications, though proper PCB layout (short gate traces, local decoupling) remains essential to suppress ringing.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has t_rr = 340 ns and Q_rr = 5.3 μC at 25 °C, which is significantly slower than Schottky diodes but optimized for ruggedness and co-packaging. It is suitable for freewheeling in hard-switched topologies but not recommended for high-frequency synchronous rectification where ultra-low Q_rr is critical.

Can STW36N60M6 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 12) enables stable current sharing. Successful paralleling requires matched gate drive impedance, symmetrical layout, and individual gate resistors (≥10 Ω) to dampen oscillation; thermal coupling via shared heatsink further improves balance.

STW36N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44.3 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1960 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW36N60M6 FAQ

1.How can I place an order for STW36N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW36N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW36N60M6 reliable?

The price and inventory of STW36N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW36N60M6 is usually 5 days.

3.What payment methods are accepted for STW36N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW36N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW36N60M6?

STW36N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW36N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW36N60M6?

For technical support, including STW36N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW36N60M6 requirements.

6.How does Aetrix verify that STW36N60M6 is sourced from the original manufacturer or authorized distributors?

All STW36N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW36N60M6 meets industry standards.

7.What is the process for return or replacement of STW36N60M6?

All STW36N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STW36N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW36N60M6 part is unused and in its original packaging.

Return procedure for STW36N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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