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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW36NM60N

Name: STW36NM60N
Brand: STMicroelectronics
SKU: STW36NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW36NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW36NM60N.pdf

Description:: MOSFET N-CH 600V 29A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,652

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Product details

Overview

STW36NM60N from STMicroelectronics is an N-channel 600 V, 29 A, 0.092 Ω R_DS(on) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency switching converters in automotive and industrial power supplies. It features 100% avalanche testing, low gate charge (83.6 nC), and low input capacitance (2722 pF), enabling fast switching with reduced conduction and switching losses.

For engineers reviewing the STW36NM60N datasheet, STW36NM60N pinout, STW36NM60N application, or STW36NM60N equivalent, this device is selected for high-voltage DC-DC conversion, motor drive half-bridges, and SMPS primary-side switching where low R_DS(on), robust avalanche capability, and thermal performance (R_thj-case = 0.6 °C/W) are critical.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize on-resistance and gate charge simultaneously. Its 600 V V_DSS rating and 150 °C max junction temperature support operation in high-reliability, high-temperature environments such as engine control units and on-board chargers.

The device integrates a fast, soft-recovery body diode (t_rr = 408 ns at T_j = 25 °C) and exhibits stable dynamic parameters across temperature-R_DS(on) increases only 1.9× from 25 °C to 150 °C, while V_GS(th) decreases predictably (0.7–1.0× normalized), enabling reliable gate drive design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage
R_DS(on) max	0.105 Ω @ V_GS = 10 V, I_D = 14.5 A - enables <1.5 W conduction loss at 14.5 A continuous current
Q_g	83.6 nC - determines gate driver power requirement and switching speed in hard-switched topologies
E_AS	345 mJ - ensures robustness against unclamped inductive switching events without external snubbers
R_thj-case	0.6 °C/W - allows 210 W dissipation with ≤126 °C case-to-junction rise, supporting compact heatsink designs
t_rr	408 ns @ T_j = 25 °C - reduces diode recovery loss and EMI in synchronous rectification and freewheeling paths
C_iss	2722 pF @ V_DS = 100 V - impacts gate drive loop stability and Miller effect during turn-off

Pinout & Package

TO-247 package: three-terminal through-hole plastic package with isolated tab (drain-connected), optimized for high-power thermal and electrical performance. Mounting surface must be electrically insulated unless drain is referenced to chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Reference node for gate drive; carries full load current and connects to low-side return path
2 (Gate)	Control terminal	High-impedance input requiring <2.9 Ω gate resistance for optimal switching speed and ringing suppression
3 (Drain)	Power output terminal	Connected to high-voltage rail; tab is electrically tied to drain and requires isolation when mounted to heatsink

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 345 mJ without parameter shift or failure
Low gate charge (83.6 nC)	Reduces gate driver power consumption and enables use of lower-cost, lower-current drivers
Low input capacitance (2722 pF)	Minimizes Miller-induced false turn-on risk and improves high-frequency switching efficiency
MDmesh™ II vertical structure	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (≈9.3 Ω·nC) for 600 V class
Soft-recovery body diode	Reduces voltage overshoot and EMI during commutation, easing filter design in bridge configurations

Applications

Automotive On-Board Charger (OBC)

Industrial AC-DC Front-End

Use Scenario: High-frequency interleaved PFC stage converting 3-phase 400 V AC to 400 V DC for EV battery charging.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in boost PFC cell operating at 65–100 kHz with zero-voltage switching assist.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses by >15 % vs. legacy 600 V MOSFETs, improving OBC efficiency from 95.2 % to 96.8 % at full load.

Use Scenario: 3 kW telecom rectifier with active clamp forward topology feeding 48 V DC distribution bus.

IC Role / Device Role / Timing Role: Main switch in primary side, handling 29 A peak current with 600 V blocking under line surge conditions.

Use Value: 150 °C T_j rating and 0.6 °C/W R_thj-case allow derating-free operation at 70 °C ambient, eliminating forced-air cooling.

Motor Drive Half-Bridge

Solar Microinverter DC-AC Stage

Use Scenario: 5 kW traction inverter module for auxiliary hydraulic pump in commercial vehicle chassis.

IC Role / Device Role / Timing Role: High-side switch in 3-phase inverter leg, switching at 8–16 kHz with 100 % duty-cycle capability.

Use Value: Avalanche ruggedness (E_AS = 345 mJ) withstands inductive kickback during fault shutdown, avoiding external clamping circuits.

Use Scenario: 300–600 V DC input stage of single-phase microinverter converting PV string output to 230 V AC grid.

IC Role / Device Role / Timing Role: Switch in full-bridge inverter leg, operating in hard-switched mode with bidirectional body diode conduction.

Use Value: Soft-recovery body diode (t_rr = 408 ns) cuts reverse recovery loss by 40 % vs. standard superjunction MOSFETs, raising inverter efficiency at light load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	R_DS(on) = 0.099 Ω, Q_g = 72 nC, TO-220FP package, no avalanche rating specified	Limited to <100 W continuous due to higher R_thj-case (1.2 °C/W); unsuitable for automotive under-hood mounting	Select only for cost-sensitive, low-power industrial SMPS where avalanche immunity is not required
IXFH30N60P	R_DS(on) = 0.13 Ω, Q_g = 110 nC, TO-247, rated for 600 V but uses older planar process	Higher conduction loss (+43 % at 14.5 A) and slower switching (t_f = 120 ns vs. 67 ns) increase thermal stress in high-frequency designs	Acceptable for 20–50 kHz fixed-frequency converters where gate drive strength exceeds 2 A peak

Compared with IPP60R099C7 and IXFH30N60P, STW36NM60N delivers superior R_DS(on) × Q_g trade-off, guaranteed avalanche capability, and lower thermal resistance-making it the preferred choice for automotive-grade, high-efficiency, high-reliability 600 V switching where system-level robustness and efficiency are prioritized over lowest unit cost.

Availability

STW36NM60N is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial AC-DC front-ends, and solar microinverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW36NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage power conversion systems demanding low R_DS(on), low Q_g, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW36NM60N supports 18 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Does STW36NM60N have a fully rated avalanche capability?

Yes-ST specifies 100 % avalanche testing per production lot. The device guarantees single-pulse avalanche energy (E_AS) of 345 mJ at T_j = 25 °C with V_DD = 50 V and I_AR = 10.5 A, enabling reliable operation in unclamped inductive switching scenarios without external protection.

Can STW36NM60N be used in synchronous rectification topologies?

Yes-the integrated body diode has soft recovery characteristics (t_rr = 408 ns, Q_rr = 8 µC at 25 °C), making it suitable for synchronous rectification in LLC resonant converters and active clamp forward topologies where low reverse recovery loss is essential.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

For 100 kHz hard-switched operation with minimal ringing and acceptable switching loss, a 4.7 Ω gate resistor is validated in the datasheet (Table 6 test condition). This value balances turn-on/turn-off time (t_d(on) = 17 ns, t_f = 67 ns) and gate drive current requirements while maintaining stability across temperature.

STW36NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83.6 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2722 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW36NM60N FAQ

1.How can I place an order for STW36NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW36NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW36NM60N reliable?

The price and inventory of STW36NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW36NM60N is usually 5 days.

3.What payment methods are accepted for STW36NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW36NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW36NM60N?

STW36NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW36NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW36NM60N?

For technical support, including STW36NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW36NM60N requirements.

6.How does Aetrix verify that STW36NM60N is sourced from the original manufacturer or authorized distributors?

All STW36NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW36NM60N meets industry standards.

7.What is the process for return or replacement of STW36NM60N?

All STW36NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW36NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW36NM60N part is unused and in its original packaging.

Return procedure for STW36NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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