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STMicroelectronics STW36NM60ND
- Part No.:
- STW36NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW36NM60ND.pdf
- Description:
- MOSFET N-CH 600V 29A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:7,957
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Product details
Overview
STW36NM60ND from STMicroelectronics is an automotive-grade N-channel 600 V, 29 A FDmesh™ II Power MOSFET with integrated fast-recovery body diode in TO-247 package. It delivers 0.097 Ω typ. RDS(on), 80.4 nC total gate charge, and 40 V/ns peak diode recovery dv/dt for high-efficiency hard-switching in on-board chargers and DC-DC converters.
For engineers reviewing the STW36NM60ND datasheet, STW36NM60ND pinout, STW36NM60ND application, or STW36NM60ND equivalent, this page provides verified electrical specs, thermal performance data, automotive qualification status (AEC-Q101), and real-world switching behavior in bridge and ZVS phase-shift topologies.
Technical Context
This MOSFET uses ST's second-generation FDmesh™ II vertical stripe layout with optimized cell pitch and trench depth to achieve ultra-low RDS(on) × Qg figure-of-merit. Its intrinsic fast-recovery body diode enables zero-voltage switching in resonant converters without external diodes.
The device supports 150 °C maximum junction temperature and features 100% avalanche-tested ruggedness. Its 4.5–5.5 mm lead spacing and 14.2–14.8 mm package length comply with TO-247 mechanical standards for industrial heatsink mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands 600 V drain-source blocking voltage, enabling use in 400 V bus systems with 50% safety margin. |
| RDS(on) max | 0.110 Ω - Ensures ≤2.2 W conduction loss at 14.5 A, critical for thermal management in sealed automotive enclosures. |
| ID continuous | 29 A @ TC = 25 °C - Supports high-current output stages in traction inverters and bidirectional DC-DC converters. |
| Qg | 80.4 nC - Enables efficient gate drive with standard 1–2 A peak drivers while maintaining <111 ns turn-off delay. |
| EAS | 110 mJ - Guarantees single-pulse avalanche energy handling up to 110 mJ, supporting unclamped inductive switching reliability. |
| tr/tf | 53.4 ns / 61.8 ns - Fast edge rates reduce switching losses in >100 kHz SMPS designs without excessive EMI. |
| dv/dt immunity | 40 V/ns - High diode recovery dv/dt tolerance prevents false triggering during commutation in half-bridge configurations. |
Pinout & Package
STW36NM60ND is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when used in high-side configurations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main current path from drain metallization to internal die | Connected directly to metal tab; must be thermally coupled to heatsink and electrically isolated if floating potential required. |
| 2 (Gate) | Control electrode for channel formation | Low 2.87 Ω gate input resistance enables stable drive with minimal overshoot; requires 10 V gate drive for full enhancement. |
| 3 (Source) | Reference node for gate control and current return path | Source bond wires connect to internal die source region; serves as local ground reference for gate driver ICs. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and charging applications per stress test requirements including HTGB, HTRB, and temperature cycling. |
| 100% avalanche tested | Every unit undergoes single-pulse avalanche stress at rated IAR = 7 A, ensuring robustness against inductive kickback in motor drives. |
| Low Qg/RDS(on) ratio | 80.4 nC / 0.110 Ω = 731 nC·Ω - Optimized for high-frequency operation where gate loss and conduction loss trade-offs are critical. |
| Fast body diode trr | 175 ns @ TJ = 150 °C - Reduces reverse recovery loss by >40% vs. standard MOSFETs, improving efficiency in synchronous rectification. |
| High dv/dt immunity | 40 V/ns - Prevents spurious turn-on during high-speed switching in noisy automotive environments with shared ground planes. |
Applications
| On-Board Charger (OBC) | DC-DC Converter |
|---|---|
|
Use Scenario: Bidirectional AC/DC conversion in EVs for grid-to-battery and vehicle-to-grid (V2G) operation. IC Role / Device Role / Timing Role: High-side switch in interleaved LLC resonant half-bridge, operating at 100–300 kHz with ZVS. Use Value: Low Qg and fast tr/tf reduce dead-time losses; integrated diode eliminates need for discrete SiC Schottky in secondary side. |
Use Scenario: 400 V to 12 V/48 V isolated DC-DC conversion for auxiliary power units in battery electric vehicles. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, handling 3–5 kW power levels. Use Value: 150 °C TJ rating allows derating-free operation in under-hood ambient up to 105 °C; RDS(on) stability over temperature ensures consistent efficiency. |
| Traction Inverter Auxiliary Stage | Industrial Motor Drive |
|
Use Scenario: Auxiliary power supply for gate drivers and sensors within main traction inverter housing. IC Role / Device Role / Timing Role: Low-side switch in buck converter feeding isolated DC/DC for isolated gate driver supplies. Use Value: Avalanche ruggedness protects against bus transients during IGBT short-circuit events; low Ciss (2785 pF) minimizes capacitive coupling noise. |
Use Scenario: High-voltage industrial pump/compressor drives operating from 380–480 VAC mains. IC Role / Device Role / Timing Role: Output stage switch in 3-phase inverter leg, configured in six-pack module replacement. Use Value: TO-247 package enables direct heatsink mounting with <0.66 °C/W Rth(j-c), supporting 190 W dissipation at 25 °C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH36N60P | Higher RDS(on) (0.135 Ω max), higher Qg (105 nC), no AEC-Q101 qualification | Targeted at industrial UPS and solar inverters, not automotive environments | Select only for cost-sensitive non-automotive designs where 150 °C operation and automotive qualification are unnecessary. |
| IPP60R099C7 | Lower RDS(on) (0.099 Ω typ), lower Qg (65 nC), but TO-220FP package limits thermal performance | Suitable for compact consumer PSUs, not high-power automotive modules due to 35 W PTOT limit | Prefer for space-constrained designs below 1 kW; avoid in OBC or traction auxiliary stages requiring >100 W dissipation. |
Compared with IXFH36N60P and IPP60R099C7, STW36NM60ND uniquely combines AEC-Q101 qualification, TO-247 thermal capability (190 W), and FDmesh™ II low-loss switching-making it the only choice for automotive-grade 3–5 kW power stages requiring both reliability and efficiency.
Availability
STW36NM60ND is available at Aetrix Electronics and suitable for on-board chargers, traction auxiliary supplies, and industrial motor drives requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for STW36NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive electrification systems-including onboard chargers, DC-DC converters, and auxiliary power supplies.
FAQ
Is STW36NM60ND pin-compatible with STB36NM60ND?
No. STW36NM60ND uses TO-247 packaging with three leads and isolated drain tab, while STB36NM60ND is in D2PAK (TO-263) surface-mount package with two leads and exposed drain pad. Their footprints, thermal paths, and mounting methods are incompatible; PCB redesign is required for substitution.
What is the maximum recommended gate resistor value for reliable switching?
For stable turn-on/turn-off without oscillation, ST recommends RG = 4.7 Ω (as tested in datasheet Figure 16). Values above 10 Ω increase switching time and losses; values below 2.2 Ω risk gate driver overstress and ringing due to low gate input resistance (2.87 Ω).
Does the body diode support continuous conduction mode (CCM) in synchronous rectification?
Yes. The intrinsic fast-recovery body diode has trr = 175 ns and Qrr = 1.4 µC at 29 A, enabling reliable CCM operation in LLC and phase-shifted full-bridge converters up to 300 kHz, provided junction temperature remains ≤150 °C.
Can STW36NM60ND be used in parallel configurations?
Yes, but with strict layout and gate drive matching. Parallel operation requires identical gate trace lengths, Kelvin source connections, and individual gate resistors (4.7 Ω each) to ensure current sharing. Thermal coupling via common heatsink is mandatory to prevent thermal runaway.
STW36NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80.4 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2785 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW36NM60ND FAQ
1.How can I place an order for STW36NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STW36NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW36NM60ND reliable?
The price and inventory of STW36NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW36NM60ND is usually 5 days.
3.What payment methods are accepted for STW36NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW36NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW36NM60ND?
STW36NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW36NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW36NM60ND?
For technical support, including STW36NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW36NM60ND requirements.
6.How does Aetrix verify that STW36NM60ND is sourced from the original manufacturer or authorized distributors?
All STW36NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW36NM60ND meets industry standards.
7.What is the process for return or replacement of STW36NM60ND?
All STW36NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW36NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW36NM60ND part is unused and in its original packaging.
Return procedure for STW36NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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