STMicroelectronics STW38N65M5

Overview

STW38N65M5 from STMicroelectronics is an N-channel 650 V, 73 mΩ typ., 30 A MDmesh M5 Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant topologies in industrial SMPS, PFC stages, and solar inverters. It delivers 50 V/ns dv/dt ruggedness, 150 °C max junction temperature, and 100% avalanche-tested reliability under repetitive stress.

For engineers reviewing the STW38N65M5 datasheet, STW38N65M5 pinout, STW38N65M5 application, or STW38N65M5 equivalent, key selection criteria include R_DS(on) stability over temperature, gate charge (71 nC), output capacitance energy (E_oss = 12 µJ at 400 V), diode reverse recovery performance (Q_rr = 10.3 µC at 150 °C), and thermal resistance (R_thJC = 0.66 °C/W).

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) × Q_g figure-of-merit (5.2 Ω·nC) and reduced capacitive losses. Its optimized cell structure enables stable operation under high dv/dt (50 V/ns) without spurious turn-on.

The integrated body diode features soft recovery (trr = 522 ns at TJ = 150 °C, di/dt = 100 A/µs) and low Q_rr, minimizing switching loss in bridge configurations. The TO-247 package provides low thermal resistance (0.66 °C/W junction-to-case) and robust mechanical mounting for high-power conduction.

Key Specifications

Pinout & Package

STW38N65M5 uses a TO-247 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware in high-side configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R090CFD7 and IXTH30N65X2, STW38N65M5 offers the lowest R_DS(on) × Q_g product and best dv/dt ruggedness-making it optimal for high-current, hard-switched industrial power stages where gate drive simplicity and avalanche margin are critical.

Availability

STW38N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, three-phase active PFC rectifiers, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for STW38N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STW38N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 600–650 V switching in industrial power conversion systems demanding low conduction loss and robust avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) is 19 A at T_C = 100 °C, as specified in Table 1 of DS8914 Rev 5. This rating accounts for thermal derating due to junction-to-case resistance (0.66 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Is STW38N65M5 suitable for zero-voltage switching (ZVS) topologies?

Yes-its low E_oss (12 µJ at 400 V) and controlled C_oss nonlinearity (Co_er = 70 pF) reduce turn-on loss in resonant LLC and phase-shifted full-bridge converters. The 71 nC total gate charge also enables precise ZVS timing control with standard gate drivers.

Does the body diode require external snubbing in bridge configurations?

No-its soft-recovery characteristics (Q_rr = 10.3 µC, trr = 522 ns at 150 °C) and low I_RRM (40 A) minimize voltage overshoot and EMI, allowing direct use in synchronous rectification and half-bridge inverters without additional snubber networks.

Can STW38N65M5 replace STP38N65M5 in existing TO-220 layouts?

No-STW38N65M5 uses TO-247 packaging with different pin spacing, mounting hole pattern, and thermal interface requirements. Direct replacement would require PCB redesign, heatsink retooling, and verification of creepage/clearance distances due to higher power density and tab voltage exposure.