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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW38NB20

Name: STW38NB20
Brand: STMicroelectronics
SKU: STW38NB20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW38NB20

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW38NB20.pdf

Description:: MOSFET N-CH 200V 38A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,184

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Product details

Overview

STW38NB20 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 200 V V_DS, 38 A continuous drain current at T_C = 25 °C, and typ. R_DS(on) = 0.052 Ω at V_GS = 10 V. It features ±30 V gate-source voltage rating, 100% avalanche tested, and optimized for high-speed switching in SMPS and motor drive inverters.

For engineers reviewing the STW38NB20 datasheet, STW38NB20 pinout, STW38NB20 application, or STW38NB20 equivalent, key selection criteria include its 5.5 V/ns dv/dt capability, low 70–95 nC total gate charge, 150 °C max junction temperature, and robust 550 mJ single-pulse avalanche energy - critical for hard-switched industrial power stages.

Technical Context

This MOSFET employs ST's PowerMESH™ process with a patented strip layout and edge termination, enabling lowest R_DS(on)/area among 200 V devices. Its intrinsic capacitances (C_iss = 2800–3800 pF, C_oss = 750–1000 pF, C_rss = 100–140 pF) and fast switching times (t_d(on) = 35–47 ns, t_r(Voff) = 18–24 ns) support high-frequency operation up to 100 kHz in resonant and hard-switched topologies.

The integrated body diode delivers 38 A continuous source-drain current with 1.5 V forward voltage at 38 A and 350 ns reverse recovery time at 150 °C, making it suitable for freewheeling and synchronous rectification where diode Q_rr = 2.3 µC and I_RRM = 13 A must be managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports DC bus voltages up to 170 V RMS in 120/230 VAC SMPS input stages
R_DS(on) (typ)	0.052 Ω at V_GS = 10 V - enables <1.9 W conduction loss at 19 A, reducing heatsink requirements
I_D (cont)	38 A at T_C = 25 °C - delivers full-rated current with forced-air cooling on standard TO-247 heatsinks
Q_g	70–95 nC - determines gate driver power demand and switching transition time in PWM control
E_AS	550 mJ - withstands single-pulse inductive energy without failure in motor drive flyback events
dv/dt	5.5 V/ns - resists false turn-on during high-slew-rate transients in bridge-leg configurations
T_j(max)	150 °C - allows operation in sealed enclosures with ambient up to 85 °C under derated current

Pinout & Package

TO-247 package: isolated tab (drain), three leads - Gate (pin 1), Drain (pin 2, tab-connected), Source (pin 3). Thermal resistance R_th(j-case) = 0.69 °C/W enables efficient heat transfer to heatsink via insulated mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	High-impedance control terminal requiring <95 nC charge for full enhancement; sensitive to ESD
Pin 2 (center, tab)	Drain	Main high-voltage power terminal; electrically connected to metal tab for thermal and electrical path
Pin 3 (right)	Source	Power return and reference node for gate drive; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
PowerMESH™ process architecture	Delivers industry-lowest R_DS(on)/die area for 200 V class, improving power density in compact converters
100% avalanche tested	Guarantees ruggedness against inductive switching stress without external snubbers in UPS/motor drive H-bridges
Low C_rss (100–140 pF)	Minimizes Miller effect, enabling stable gate drive with moderate RG and reducing risk of shoot-through
Extremely high dv/dt capability (5.5 V/ns)	Prevents spurious turn-on during fast voltage transitions in half-bridge and LLC resonant circuits
Optimized body diode (Q_rr = 2.3 µC)	Reduces switching losses and EMI in non-synchronous rectification applications like welding inverters

Applications

Switch Mode Power Supply (SMPS)

DC-AC Inverter for Welding Equipment

Use Scenario: Primary-side switching in 1–3 kW offline flyback and forward converters with universal AC input.

IC Role / Device Role / Timing Role: High-voltage power switch handling 200 V DC link, driven by UC384x or similar PWM controller.

Use Value: Low R_DS(on) and gate charge reduce conduction and switching losses, enabling >90% efficiency at 65–100 kHz.

Use Scenario: Output stage in IGBT-assisted or all-MOSFET inverter for arc welding machines with fast current ramp-up.

IC Role / Device Role / Timing Role: Upper/lower leg switch in full-bridge topology operating at 20–50 kHz with high di/dt demands.

Use Value: Avalanche ruggedness and 5.5 V/ns dv/dt tolerance prevent failure during short-circuit and open-circuit arc transients.

Uninterruptible Power Supply (UPS)

Industrial Motor Drive Inverter

Use Scenario: Battery-to-AC inverter stage in line-interactive and online double-conversion UPS systems.

IC Role / Device Role / Timing Role: DC-link switch modulating 170–400 V DC into 50/60 Hz sine-wave output via SPWM.

Use Value: 150 °C T_j(max) and 38 A continuous rating support sustained overload conditions during battery backup mode.

Use Scenario: Three-phase inverter output stage for 0.75–2.2 kW PMSM/induction motor drives in HVAC and pumps.

IC Role / Device Role / Timing Role: Phase-leg switch controlled by isolated gate drivers (e.g., Si823x) with dead-time management.

Use Value: Low Q_g and fast trr (350 ns) minimize switching losses and improve torque response fidelity at 8–16 kHz PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP460	R_DS(on) = 0.27 Ω (higher), Q_g = 140 nC (higher), T_j(max) = 150 °C same	Higher conduction loss limits use to ≤15 A continuous; less suitable for high-frequency SMPS	Prefer when cost sensitivity outweighs efficiency and thermal constraints
IXFH38N20P	R_DS(on) = 0.055 Ω (nearly identical), Q_g = 85 nC, avalanche rated but not 100% tested	Slightly higher gate charge increases driver loss; no guaranteed avalanche margin per unit	Acceptable where statistical avalanche reliability suffices and gate drive strength is ample

Compared with IRFP460 and IXFH38N20P, STW38NB20 offers the lowest R_DS(on) and verified per-unit avalanche ruggedness - critical for mission-critical industrial inverters where failure modes must be eliminated, not statistically managed.

Availability

STW38NB20 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and industrial motor drive inverters requiring stable component supply and long-term design-in support.

Supply support for STW38NB20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STW38NB20 belongs to ST's PowerMESH™ MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where avalanche tolerance, low gate charge, and thermal robustness are mandatory.

FAQ

Is STW38NB20 still in active production?

No - STW38NB20 is marked as Obsolete Product(s) in the official datasheet revision history. STMicroelectronics discontinued this part; however, Aetrix Electronics maintains legacy inventory with full traceability and provides engineering support for ongoing production and repair programs.

What is the maximum safe operating area (SOA) limitation for pulsed drain current?

The pulsed drain current I_DM = 152 A is limited by SOA constraints: pulse width must remain below 300 µs with 1.5% duty cycle, and V_DD must not exceed V_(BR)DSS while T_j stays within 150 °C. Exceeding these violates SOA boundaries and risks thermal runaway.

Can STW38NB20 replace STW45NM50 in a 500 V design?

No - STW38NB20 has a 200 V V_DS rating and cannot substitute for the 500 V-rated STW45NM50. Attempting replacement risks catastrophic breakdown under normal operating voltage. A direct upgrade requires re-evaluating topology voltage stress and selecting a 500 V MOSFET with matching R_DS(on) and Q_g.

Does the body diode support synchronous rectification?

No - the body diode is optimized for freewheeling, not synchronous rectification. Its 350 ns t_rr and 2.3 µC Q_rr generate significant switching loss and EMI when reverse-biased during high-frequency commutation. Dedicated low-Q_rr Schottky or GaN FETs are recommended for synchronous rectifier roles.

STW38NB20 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW38NB20 FAQ

1.How can I place an order for STW38NB20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW38NB20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW38NB20 reliable?

The price and inventory of STW38NB20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW38NB20 is usually 5 days.

3.What payment methods are accepted for STW38NB20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW38NB20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW38NB20?

STW38NB20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW38NB20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW38NB20?

For technical support, including STW38NB20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW38NB20 requirements.

6.How does Aetrix verify that STW38NB20 is sourced from the original manufacturer or authorized distributors?

All STW38NB20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW38NB20 meets industry standards.

7.What is the process for return or replacement of STW38NB20?

All STW38NB20 units undergo pre-shipment inspection (PSI). If there is an issue with STW38NB20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW38NB20 part is unused and in its original packaging.

Return procedure for STW38NB20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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