STMicroelectronics STW3N170

Overview

STW3N170 from STMicroelectronics is a high-voltage N-channel PowerMESH MOSFET in TO-247 package, rated for 1700 V drain-source voltage, 13 Ω max R_DS(on), and 2.6 A continuous drain current at T_C = 25 °C. It features minimized intrinsic capacitances (C_iss = 1100 pF typ., C_oss = 50 pF typ.) and low total gate charge (Q_g = 44 nC), enabling high-speed switching in high-voltage DC-DC converters and industrial snubber circuits.

For engineers reviewing the STW3N170 datasheet, STW3N170 pinout, STW3N170 application, or STW3N170 equivalent, key selection criteria include its 100% avalanche-tested ruggedness (E_AS = 2 mJ at T_J = 25 °C), 1700 V breakdown voltage with <10 µA leakage, and thermal resistance of 0.78 °C/W junction-to-case - critical for high-reliability HV power stage design.

Technical Context

This device employs ST's strip-layout-based MESH OVERLAY process to achieve superior R_DS(on)-to-voltage rating ratio and reduced gate-drain charge (Q_gd = 25 nC). Its unclamped inductive switching capability is validated per Figure 16–17 test circuit, supporting robust operation under repetitive avalanche stress.

The integrated body diode exhibits t_rr = 1.58 µs and Q_rr = 6 µC at I_SD = 2.6 A, di/dt = 100 A/µs, making it suitable for hard-switched topologies where diode recovery behavior directly impacts EMI and switching loss.

Key Specifications

Pinout & Package

STW3N170 is housed in a standard TO-247 package with exposed drain tab (pin 2) for direct heatsink mounting. The case is electrically connected to the drain terminal, requiring isolation hardware in most PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20N170 and IXTH3N170, STW3N170 offers optimal balance of ruggedness (2 mJ E_AS), manageable gate drive demand (44 nC), and TO-247-3L footprint - making it preferred for cost-sensitive, space-constrained HV snubber and crowbar applications where Kelvin source benefits are unnecessary.

Availability

STW3N170 is available at Aetrix Electronics and suitable for industrial HV DC-DC converters, AC line surge protection circuits, and capacitor discharge units requiring stable component supply across multi-year production cycles.

Supply support for STW3N170 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STW3N170 belongs to ST's PowerMESH HV MOSFET product line, engineered specifically for high-reliability, high-voltage switching in industrial power conversion and protection systems where avalanche robustness and thermal stability are mandatory.

FAQ

What is the maximum safe operating temperature for STW3N170?

The STW3N170 has an operating junction temperature range of −55 °C to 150 °C. Its absolute maximum rating is defined by thermal limits: at T_C = 25 °C, P_TOT = 160 W corresponds to ΔT = 125 °C across R_thJC = 0.78 °C/W. Derating is required above 25 °C case temperature per the SOA curve in Figure 1 of DS11126.

Does STW3N170 require a gate resistor for safe operation?

Yes - a gate resistor (R_G = 4.7 Ω typical, per Figure 13 test circuit) is required to control dV/dt and prevent parasitic turn-on. The device's intrinsic gate resistance is 3.6 Ω, so external R_G must be selected to limit peak gate current and dampen oscillations, especially given its 1100 pF C_iss and 7 pF C_rss.

Can STW3N170 replace STW3N150 in existing designs?

No - STW3N150 is rated for 1500 V V_DS, while STW3N170 is rated for 1700 V. Though pin-compatible and similar in R_DS(on) and current rating, the higher breakdown voltage alters safe operating area boundaries and avalanche energy profile. Layout and SOA validation are required before substitution.

Is the body diode suitable for freewheeling in hard-switched topologies?

The integrated body diode has t_rr = 1.58 µs and Q_rr = 6 µC at 25 °C, increasing to 2.12 µs and 8.8 µC at 150 °C. While usable for low-frequency freewheeling, its recovery characteristics generate measurable switching loss and EMI in >50 kHz topologies - external SiC Schottky diodes are recommended for high-frequency applications.