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STMicroelectronics STW40N20

Part No.:
STW40N20
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTW40N20.pdf
Description:
MOSFET N-CH 200V 40A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,150

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Product details

Overview

STW40N20 from STMicroelectronics is an N-channel 200V, 40A, 0.038Ω RDS(on) Power MOSFET in TO-247 package, optimized for high-efficiency isolated DC-DC converters as a primary switch. It features low gate charge (75 nC), low output capacitance (510 pF), and 100% avalanche tested ruggedness with 230 mJ single-pulse energy rating.

For engineers reviewing the STW40N20 datasheet, STW40N20 pinout, STW40N20 application, or STW40N20 equivalent, key selection criteria include thermal resistance (Rthj-case = 0.78°C/W), safe operating area at high dv/dt (12 V/ns), and gate-drive compatibility with standard 10V logic-level controllers in hard-switched topologies.

Technical Context

This STripFET™ II MOSFET uses a planar vertical structure with minimized intrinsic capacitances to reduce switching losses and improve efficiency in high-frequency power conversion. Its low Ciss/Coss ratio (2500 pF / 510 pF) supports ZVS-capable resonant designs while maintaining robust dv/dt immunity.

The device integrates a fast-recovery body diode (trr = 192 ns @ Tj = 25°C) with low Qrr (922 nC), enabling reliable synchronous rectification and freewheeling operation in LLC and phase-shifted full-bridge converters without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 200 V - Withstands 200V drain-source blocking voltage, suitable for 110–230VAC offline input stages after PFC.
RDS(on) 0.038 Ω (typ.) - Enables <1.5W conduction loss at 20A continuous current with minimal heatsink requirement.
Qg 75 nC - Reduces gate drive power and enables use of low-current drivers (e.g., UCC27531) at >300 kHz switching.
Ptot 40 W @ TC = 25°C - Matches TO-247 thermal capability; derates to 0.32 W/°C above 25°C case temperature.
Rthj-case 0.78 °C/W - Allows direct mounting to heatsink with ≤52°C temperature rise at full 40W dissipation.
EAS 230 mJ - Supports unclamped inductive switching stress without failure in flyback or forward converter snubberless designs.
trr 192 ns - Limits reverse recovery loss during hard commutation, critical for minimizing shoot-through risk in half-bridge configurations.

Pinout & Package

STW40N20 is housed in a TO-247 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless referenced to high-side potential.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control electrode Accepts 10V logic-level drive; requires 13.2 nC Qgs and 35.5 nC Qgd for full enhancement and Miller transition.
2 (Drain) Main power output node Connected to high-voltage rail (up to 200V); tab is electrically tied to Drain and serves as primary thermal path.
3 (Source) Reference node / return path Serves as local ground reference for gate driver; carries full load current (40A continuous) and source-diode recovery current.

Key Features

Feature Design Value
Low gate charge (Qg) 75 nC enables efficient high-frequency switching (>250 kHz) with minimal gate driver power loss.
Optimized capacitance profile Ciss/Coss = 4.9:1 improves soft-switching margin and reduces EMI generation in resonant topologies.
100% avalanche rated 230 mJ single-pulse EAS ensures reliability under transient overvoltage and inductive kick conditions.
ECOPACK® compliant Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental standards.
High dv/dt immunity 12 V/ns rated slope prevents spurious turn-on during fast voltage transients in high-side configurations.

Applications

Server PSU Primary Switch Industrial AC-DC Adapter

Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW server power supply using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side main switch handling 40A peak current at 100–200 kHz with zero-voltage switching.

Use Value: Low Qg and Coss reduce total switching loss by 18% vs. legacy MOSFETs, enabling >96% efficiency at full load.

Use Scenario: Main switch in 500W industrial AC-DC adapter for PLC I/O modules requiring wide input range (85–264 VAC).

IC Role / Device Role / Timing Role: Active clamp forward converter primary switch operating at 150 kHz with tight duty-cycle control.

Use Value: 0.78°C/W Rthj-case allows convection-cooled design without forced airflow, reducing system noise and fan BOM cost.

Telecom Rectifier Module Renewable Energy Inverter Stage

Use Scenario: Output stage switch in 3 kW telecom rectifier module converting -48 VDC bus to intermediate 12 V distribution rail.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter with body diode conduction during dead time.

Use Value: 192 ns trr and low Qrr minimize reverse recovery loss, improving light-load efficiency by 3.2% at 10% load.

Use Scenario: DC-link switch in 5 kW solar microinverter interfacing PV array to grid-tied H-bridge inverter stage.

IC Role / Device Role / Timing Role: High-voltage DC bus switch in bidirectional DC-DC stage supporting battery charging and grid export.

Use Value: 200V VDSS and 230 mJ EAS withstand PV string surges up to 1.5× nominal voltage without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTH40N20 RDS(on) = 0.042 Ω (typ.), Qg = 82 nC, TO-247 package, no avalanche rating specified Lacks guaranteed EAS specification; requires external snubber in unclamped inductive loads Prefer where avalanche stress is absent and gate drive margin is available for higher Qg.
IRFP460 RDS(on) = 0.27 Ω (typ.), Qg = 140 nC, TO-247, 500V-rated but higher on-resistance Higher conduction loss limits usable current to ~15A continuous; unsuitable for high-current 200V designs Only consider if 500V rating is mandatory and thermal budget permits significant derating.

Compared with IXTH40N20 and IRFP460, STW40N20 delivers superior figure-of-merit (RDS(on) × Qg = 2.85 Ω·nC), verified avalanche ruggedness, and lower thermal resistance-making it optimal for high-density, high-reliability 200V power stages where efficiency and robustness are co-prioritized.

Availability

STW40N20 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for STW40N20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STW40N20 belongs to the STripFET™ II family, engineered specifically for high-frequency, high-efficiency power conversion in isolated DC-DC topologies where low gate charge and rugged avalanche performance are essential.

FAQ

Is STW40N20 suitable for gate-driving with 5V logic?

No. STW40N20 has a gate threshold voltage (VGS(th)) of 2–4 V and requires 10 V for full enhancement to achieve its specified 0.038 Ω RDS(on). Driving with only 5 V results in partial turn-on, excessive conduction loss (>0.2 Ω), and thermal runaway risk at rated current. A dedicated 10–15 V gate driver is mandatory.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (ID) at TC = 100°C is 25 A, as specified in Table 1 of the datasheet. This reflects thermal derating due to reduced channel mobility and increased RDS(on); operation above this current requires active cooling or pulse-width limitation to maintain junction temperature below 150°C.

Does STW40N20 have a built-in ESD protection diode on the gate?

No. STW40N20 lacks integrated gate ESD protection. Its gate oxide is rated for ±20 V absolute maximum VGS, and exposure to static discharge exceeding ±1000 V HBM can cause irreversible damage. External gate protection (e.g., 12 V Zener clamp between gate and source) is required during PCB handling and assembly.

Can STW40N20 replace STP40N20 in existing TO-220 layouts?

No. STW40N20 uses TO-247 packaging with different lead spacing (E = 10.0–10.4 mm), tab orientation, and thermal mounting requirements versus TO-220 (E = 15.45–15.75 mm). Mechanical interference, solder joint stress, and thermal interface mismatch make direct replacement non-viable without PCB redesign and thermal validation.

STW40N20 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
160W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

STW40N20 FAQ

1.How can I place an order for STW40N20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW40N20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW40N20 reliable?

The price and inventory of STW40N20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW40N20 is usually 5 days.

3.What payment methods are accepted for STW40N20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW40N20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW40N20?

STW40N20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW40N20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW40N20?

For technical support, including STW40N20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW40N20 requirements.

6.How does Aetrix verify that STW40N20 is sourced from the original manufacturer or authorized distributors?

All STW40N20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW40N20 meets industry standards.

7.What is the process for return or replacement of STW40N20?

All STW40N20 units undergo pre-shipment inspection (PSI). If there is an issue with STW40N20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW40N20 part is unused and in its original packaging.

Return procedure for STW40N20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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