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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW40N60M2

Name: STW40N60M2
Brand: STMicroelectronics
SKU: STW40N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW40N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW40N60M2.pdf

Description:: MOSFET N-CH 600V 34A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW40N60M2 from STMicroelectronics is an N-channel 600 V, 78 mΩ typ., 34 A MDmesh™ M2 Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant converters. It delivers low gate charge (57 nC), optimized Coss profile (117 pF), 100% avalanche tested performance, and Zener-protected gate, enabling robust operation in industrial SMPS and PFC stages.

For engineers reviewing the STW40N60M2 datasheet, STW40N60M2 pinout, STW40N60M2 application, or STW40N60M2 equivalent, key selection criteria include RDS(on) at 10 V gate drive, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and thermal resistance (RthJC = 0.50 °C/W) for high-power density designs.

Technical Context

This device uses ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and switching energy. Its 78 mΩ typical RDS(on) at VGS = 10 V and 17 A, combined with low Crss (2.4 pF) and Coss eq. (342 pF), enables fast, low-loss turn-off in high-frequency topologies.

The MOSFET integrates a robust body diode with 34 A continuous source-drain current, 440 ns trr at TJ = 25 °C, and soft recovery characteristics-critical for reducing EMI and voltage overshoot in bridge-leg and LLC resonant applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin for transients.
R_DS(on) typ.	78 mΩ at V_GS = 10 V, I_D = 17 A - Enables <1.3 W conduction loss at 34 A, supporting compact heatsink design.
Q_g	57 nC - Reduces gate drive power and allows use of lower-cost, lower-current drivers in 100–300 kHz converters.
E_AS	500 mJ - Supports reliable unclamped inductive switching without external snubbers in flyback or forward converters.
dv/dt ruggedness	50 V/ns - Ensures immunity to parasitic turn-on during high-speed switching in high-noise motor drive inverters.
T_J max	150 °C - Allows sustained operation in enclosed industrial enclosures with ambient up to 85 °C and forced airflow.
R_thJC	0.50 °C/W - Delivers 250 W total power dissipation at T_C = 25 °C, enabling high-power-density TO-247 mounting on copper baseplates.

Pinout & Package

STW40N60M2 is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically tied to the drain terminal, requiring insulated mounting hardware when used in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	Low-impedance control input; requires ≤±25 V drive; gate charge Q_g = 57 nC dictates driver sizing.
2 (Lead)	Source (S)	Power return path and reference for gate drive; carries full load current (34 A continuous) and diode reverse recovery charge.
3 (Lead)	Drain (D)	Main high-voltage power terminal; connected to metal tab; must be isolated from heatsink unless referenced to system ground.
Tab	Drain (D)	Primary thermal path and high-current drain connection; requires ≥0.5 mm creepage clearance to adjacent circuitry at 600 V.

Key Features

Feature	Design Value
MDmesh™ M2 technology	Enables 78 mΩ R_DS(on) at 600 V while maintaining low C_oss and high dv/dt immunity-unachievable with planar or earlier trench processes.
Zener-protected gate	Integrated gate oxide protection clamps transient overvoltage to ±25 V, eliminating need for external gate Zener in noisy industrial environments.
100% avalanche tested	Every unit validated for single-pulse avalanche energy (E_AS = 500 mJ), ensuring field reliability in inductive switching failure modes.
Optimized C_oss profile	C_oss = 117 pF and C_oss_eq = 342 pF enable predictable zero-voltage switching (ZVS) timing in LLC and phase-shifted full-bridge converters.
Soft-recovery body diode	trr = 440 ns and Q_rr = 8.2 µC at 25 °C minimize voltage spikes and EMI during commutation in half-bridge synchronous rectification.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW AC/DC front-end supplies with active PFC and LLC resonant DC/DC stage.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch operating at 100–200 kHz with ZVS capability enabled by low C_oss and soft diode.

Use Value: 78 mΩ R_DS(on) reduces conduction loss by >15% vs. legacy 600 V MOSFETs, improving full-load efficiency to >96%.

Use Scenario: Output synchronous rectifier and primary switch in redundant 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Bidirectional power handling: as high-side switch in forward topology and as low-side clamp diode replacement in active clamp circuits.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during fast bus transients, eliminating need for gate resistors >10 Ω.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Phase-leg switch in 5–10 kW HVAC and pump inverters using 3-phase IGBT/MOSFET hybrid topologies.

IC Role / Device Role / Timing Role: Low-inductance TO-247 package supports <10 ns switching transitions; body diode handles freewheeling current during PWM dead-time.

Use Value: 34 A continuous ID at T_C = 100 °C enables direct replacement of 40 A IGBTs in space-constrained drives without derating.

Use Scenario: DC-link switch in string-level solar microinverters and battery storage bi-directional DC/AC converters.

IC Role / Device Role / Timing Role: High-reliability switch subjected to repeated partial discharge and humidity cycling; 100% avalanche test ensures long-term field survival.

Use Value: E_AS = 500 mJ withstands lightning-induced surges on PV strings without external TVS, reducing BOM cost by $0.35/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	650 V, 99 mΩ, 34 A, CoolMOS™ C7 - higher R_DS(on), lower Q_g (43 nC), no integrated Zener.	Better light-load efficiency in DCM flyback; less robust under avalanche stress (E_AS = 320 mJ).	Prefer for ultra-high-frequency (>500 kHz) designs where gate drive loss dominates; avoid in unclamped inductive loads.
IXFH40N60P	600 V, 110 mΩ, 40 A, HiPerFET™ - higher R_DS(on), higher C_oss (220 pF), no avalanche rating.	Higher conduction loss but superior SOA at 10 µs pulse width; suited for linear-mode operation.	Select for analog-controlled regulators or soft-start circuits requiring wide safe operating area; not recommended for ZVS LLC.

Compared with IPP60R099C7 and IXFH40N60P, STW40N60M2 offers the best balance of low R_DS(on), high avalanche robustness, and Zener gate protection-making it optimal for industrial SMPS where reliability under fault conditions is non-negotiable.

Availability

STW40N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and renewable energy converters requiring stable component supply across multi-year production cycles.

Supply support for STW40N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, power, and digital consumer markets since 1987.

STW40N60M2 belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and telecom power conversion systems operating up to 600 V.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STW40N60M2 supports 22 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS9801 Rev 5. This rating accounts for thermal derating due to junction-to-case resistance (0.50 °C/W) and ensures safe operation within the SOA boundary at elevated temperatures.

Does STW40N60M2 have an integrated body diode, and what are its key recovery parameters?

Yes, STW40N60M2 includes a monolithic body diode rated for 34 A continuous and 136 A pulsed source-drain current. Key recovery specs include trr = 440 ns and Qrr = 8.2 µC at TJ = 25 °C, with soft recovery behavior confirmed by low IRRM (37 A) and reduced voltage overshoot in inductive switching tests.

Can STW40N60M2 be used in zero-voltage switching (ZVS) topologies?

Yes-its low and well-characterized Coss (117 pF) and Coss eq. (342 pF), combined with low Qgd (25.5 nC), enable predictable ZVS turn-on in LLC resonant and phase-shifted full-bridge converters operating up to 300 kHz, as verified in ST application note AN4379.

Is the TO-247 package of STW40N60M2 lead-free and RoHS-compliant?

Yes, STW40N60M2 is manufactured in ST's ECOPACK2-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Full compliance documentation-including Pb-free solderability and halogen-free status-is available in ST's ECOPACK database at www.st.com/ecopack.

STW40N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 88mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW40N60M2 FAQ

1.How can I place an order for STW40N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW40N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW40N60M2 reliable?

The price and inventory of STW40N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW40N60M2 is usually 5 days.

3.What payment methods are accepted for STW40N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW40N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW40N60M2?

STW40N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW40N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW40N60M2?

For technical support, including STW40N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW40N60M2 requirements.

6.How does Aetrix verify that STW40N60M2 is sourced from the original manufacturer or authorized distributors?

All STW40N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW40N60M2 meets industry standards.

7.What is the process for return or replacement of STW40N60M2?

All STW40N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STW40N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW40N60M2 part is unused and in its original packaging.

Return procedure for STW40N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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