STMicroelectronics STW40N60M2-4

Overview

STW40N60M2 from STMicroelectronics is an N-channel 600 V, 78 mΩ typ., 34 A MDmesh™ M2 Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant converters. It delivers low gate charge (57 nC), optimized Coss profile (117 pF), 100% avalanche tested performance, and Zener-protected gate, enabling robust operation in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STW40N60M2 datasheet, STW40N60M2 pinout, STW40N60M2 application, or STW40N60M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and thermal resistance (RthJC = 0.50 °C/W) for high-power density designs.

Technical Context

This device employs ST's MDmesh™ M2 strip-based silicon architecture to minimize conduction and switching losses simultaneously. Its vertical structure enables low on-resistance while maintaining fast, controlled turn-off (td(off) = 96 ns) and low reverse recovery charge (Qrr = 8.2 µC at TJ = 25 °C).

The integrated body diode exhibits soft recovery (trr = 440 ns, IRRM = 37 A) and low forward voltage (VSD = 1.6 V at ISD = 34 A), reducing snubber stress in bridge configurations. Gate threshold voltage (VGS(th) = 2–4 V) ensures reliable TTL/CMOS-level drive compatibility without risk of spurious turn-on.

Key Specifications

Pinout & Package

STW40N60M2 is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically tied to the drain terminal, requiring insulated mounting hardware in floating-source topologies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP40N60M2 and IPP60R099C7, STW40N60M2 uniquely combines TO-247 thermal performance, certified avalanche ruggedness, and MDmesh™-optimized capacitance for high-reliability, high-density industrial power conversion where thermal margin and fault tolerance are non-negotiable.

Availability

STW40N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar photovoltaic inverters, and high-voltage DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STW40N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing in Europe and Asia.

This device belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial and renewable energy power conversion systems demanding low RDS(on), low Qg, and certified avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current ID at TC = 100 °C is 22 A, as specified in Table 1 of DS9801 Rev 5. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding TJ(max) = 150 °C.

Does STW40N60M2 have an integrated body diode, and what are its key recovery characteristics?

Yes, it features a monolithic source-drain body diode with trr = 440 ns and Qrr = 8.2 µC at TJ = 25 °C (Table 7). Recovery is soft (IRRM = 37 A), minimizing voltage overshoot and EMI in bridge configurations - critical for zero-voltage switching topologies.

Can STW40N60M2 be used in avalanche mode, and is it tested for this condition?

Yes - every unit undergoes 100 % unclamped inductive switching (UIS) testing per IEC 61881, with guaranteed single-pulse avalanche energy EAS = 500 mJ at TJ = 25 °C. This qualifies it for use in circuits subject to inductive fault transients without external snubbers.

What is the recommended gate resistor value for hard-switching at 200 kHz?

A 4.7 Ω gate resistor is validated in the datasheet (Table 6 test conditions) for VDD = 300 V, ID = 34 A, yielding td(on) = 20.5 ns and tf = 11 ns. For 200 kHz operation, this value balances switching speed against gate drive loss and ringing - lower values increase EMI risk; higher values raise switching losses.