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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW40N95DK5

Name: STW40N95DK5
Brand: STMicroelectronics
SKU: STW40N95DK5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW40N95DK5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW40N95DK5.pdf

Description:: MOSFET N-CHANNEL 950V 38A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:2,536

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Product details

Overview

STW40N95DK5 from STMicroelectronics is a 950 V, 38 A N-channel Power MOSFET in the MDmesh DK5 fast-recovery diode series, featuring 130 mΩ max R_DS(on), 100% avalanche tested operation, and 50 V/ns dv/dt ruggedness. It serves as a high-voltage switching device in half-bridge and full-bridge resonant converters for industrial SMPS and HV DC-DC stages.

For engineers reviewing the STW40N95DK5 datasheet, STW40N95DK5 pinout, STW40N95DK5 application, or STW40N95DK5 equivalent, key selection criteria include its low Q_rr (1.4 µC typ.), fast trr (170 ns), high E_AS (730 mJ), and TO-247 package thermal resistance (R_thJC = 0.28 °C/W).

Technical Context

This MOSFET integrates a fast-recovery body diode with Q_rr = 1.4 µC and t_rr = 170 ns at 25 °C, enabling ZVS/ZCS operation in phase-shifted full-bridge topologies. Its gate charge profile shows Q_g = 100 nC and Q_gd/Q_gs ratio of ~3.5, supporting stable high-frequency switching up to 200 kHz.

The device exhibits extreme dv/dt ruggedness (50 V/ns) under unclamped inductive switching and operates safely across TJ = –55 to 150 °C. Its SOA is defined by R_DS(on) limitation at short pulse widths and thermal constraints at longer durations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	950 V - Supports 760 V DC bus designs with 25% margin for transient overvoltage in telecom/industrial HV supplies.
R_DS(on) max	130 mΩ - Enables <1.5 W conduction loss at 38 A continuous drain current with TC = 25 °C.
Q_rr	1.4 µC - Reduces diode recovery losses and EMI in hard-switched bridge legs compared to standard superjunction MOSFETs.
t_rr	170 ns - Allows reliable operation in 100–200 kHz soft-switching converters without snubber optimization.
E_AS	730 mJ - Sustains single-pulse unclamped inductive energy without failure at ID = 13 A and VDD = 50 V.
R_thJC	0.28 °C/W - Enables 450 W power dissipation with ≤126 °C junction rise above case at 25 °C ambient (with heatsink).
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate commutation in high-noise motor drive or PFC stages.

Pinout & Package

STW40N95DK5 uses a TO-247 package with 3 leads: Drain connected to the metal tab (pin 2), Gate at pin 1, and Source at pin 3. The package supports >450 W total power dissipation with proper heatsinking and meets ECOPACK environmental compliance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires 10 V drive for full enhancement; input capacitance Ciss = 3480 pF limits gate driver slew rate.
Pin 2 (D / TAB)	Drain terminal / thermal pad	High-voltage output node; metal tab provides primary thermal path to heatsink; electrically tied to drain.
Pin 3 (S)	Source terminal	Reference node for gate drive and current sensing; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Fast-recovery body diode	Q_rr = 1.4 µC and t_rr = 170 ns enable reduced switching loss and lower EMI in bridge configurations without external diodes.
Low FoM (R_DS(on) × Q_g)	130 mΩ × 100 nC = 13 Ω·nC - Optimized trade-off between conduction and switching loss for 100–300 kHz operation.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 730 mJ - Ensures robustness in inductive load transients without derating.
High dv/dt immunity	50 V/ns rated - Eliminates need for gate resistors or RC snubbers in noisy high-dV/dt environments like motor drives.
TO-247 thermal performance	R_thJC = 0.28 °C/W - Delivers 450 W dissipation capability with standard mounting hardware and thermal interface material.

Applications

Industrial SMPS

Telecom Rectifiers

Use Scenario: 3 kW isolated DC-DC converter in 48 V telecom rack power supply with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side switch in primary-side bridge leg; handles 760 V DC bus and 38 A peak current with ZVS-assisted turn-on.

Use Value: Low Q_rr and fast t_rr reduce dead-time losses and improve efficiency by 0.8% at full load versus legacy superjunction devices.

Use Scenario: High-efficiency AC-DC front-end rectifier stage for 5G base station power systems operating at 100 kHz.

IC Role / Device Role / Timing Role: Active clamp switch in active-clamp forward converter; conducts during reset phase and blocks 950 V during main switch off-time.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during rapid voltage transitions across transformer leakage inductance.

EV Onboard Charger

Renewable Energy Inverters

Use Scenario: Bidirectional DC-DC stage in 11 kW OBC handling 800 V battery interface and 400 V PFC output.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter; body diode conducts during zero-current intervals.

Use Value: Fast-recovery diode reduces reverse recovery loss by 65% vs standard Si MOSFETs, lowering thermal stress on heatsink design.

Use Scenario: High-voltage string inverter stage converting 1000 V PV array output to grid-compatible AC using three-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg switching device in NPC clamping circuit; blocks full DC-link voltage during modulation.

Use Value: 950 V V_DS rating provides 20% margin over 1000 V PV string max, ensuring reliability under lightning surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH30N90L2	900 V V_DS, 150 mΩ R_DS(on), Q_rr = 2.8 µC - higher conduction loss and slower diode recovery.	Limited to 600 V DC bus systems; unsuitable for 760 V telecom or 800 V EV applications without voltage derating.	Select when cost sensitivity outweighs efficiency targets and system voltage remains ≤650 V.
IPP60R190C7	650 V V_DS, 190 mΩ R_DS(on), no fast-recovery diode - requires external anti-parallel SiC Schottky.	Not rated for >700 V operation; cannot replace STW40N95DK5 in 950 V blocking roles without topology redesign.	Choose only for 400–600 V applications where ultra-low gate charge (Q_g = 42 nC) justifies added component count and layout complexity.

Compared with IXTH30N90L2 and IPP60R190C7, STW40N95DK5 uniquely delivers 950 V blocking, fast body diode recovery, and avalanche-rated ruggedness in a single TO-247 device-enabling simplified, high-efficiency designs for 760–1000 V DC systems without external diodes or voltage derating.

Availability

STW40N95DK5 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, EV onboard chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for STW40N95DK5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh DK5 product line, engineered specifically for high-efficiency, high-voltage switching in resonant and hard-switched topologies where low Q_rr, high dv/dt immunity, and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW40N95DK5 supports 24 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9918 Rev 6. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding R_thJC-limited junction rise.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage V_GS(th) of 3–5 V and is fully enhanced at V_GS = 10 V. While –5 V to –10 V gate drive improves noise immunity in high-dv/dt environments, it is not required for functional turn-off; 0 V gate is sufficient to maintain cutoff under normal conditions.

Can STW40N95DK5 be used in parallel configurations?

Yes, but with careful attention to gate loop inductance and source inductance matching. Its positive R_DS(on) temperature coefficient (Figure 9) enables current sharing, yet mismatched PCB layout or gate resistor values can cause imbalance. Use Kelvin-source connections and individual 10 Ω gate resistors per device for stable paralleling.

Is the TO-247 package lead-free and RoHS compliant?

Yes. STW40N95DK5 is supplied in an ECOPACK2-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead finish is matte tin, and all homogeneous materials are documented in ST's official ECOPACK declaration available at www.st.com/ecopack.

STW40N95DK5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DK5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3480 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: -55°C ~ 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STW40N95DK5 FAQ

1.How can I place an order for STW40N95DK5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW40N95DK5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW40N95DK5 reliable?

The price and inventory of STW40N95DK5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW40N95DK5 is usually 5 days.

3.What payment methods are accepted for STW40N95DK5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW40N95DK5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW40N95DK5?

STW40N95DK5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW40N95DK5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW40N95DK5?

For technical support, including STW40N95DK5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW40N95DK5 requirements.

6.How does Aetrix verify that STW40N95DK5 is sourced from the original manufacturer or authorized distributors?

All STW40N95DK5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW40N95DK5 meets industry standards.

7.What is the process for return or replacement of STW40N95DK5?

All STW40N95DK5 units undergo pre-shipment inspection (PSI). If there is an issue with STW40N95DK5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW40N95DK5 part is unused and in its original packaging.

Return procedure for STW40N95DK5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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