Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW42N60M2-EP

Name: STW42N60M2-EP
Brand: STMicroelectronics
SKU: STW42N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW42N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW42N60M2-EP.pdf

Description:: MOSFET N-CH 600V 34A TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:444

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW42N60M2-EP from STMicroelectronics is an N-channel 600 V, 34 A, 0.076 Ω typ. MDmesh™ M2 EP Power MOSFET in TO-247 package, optimized for high-frequency switching converters (f > 150 kHz), featuring 55 nC total gate charge, 112 pF output capacitance, and 13–14.5 µJ turn-off energy at 400 V. It serves as a primary high-side switch in resonant LLC and phase-shifted full-bridge SMPS.

For engineers reviewing the STW42N60M2-EP datasheet, STW42N60M2-EP pinout, STW42N60M2-EP application, or STW42N60M2-EP equivalent, key selection criteria include R_DS(on) stability over temperature, C_oss profile linearity, avalanche ruggedness (800 mJ E_AS), and thermal resistance (0.50 °C/W R_thj-case) for high-power density designs.

Technical Context

This device employs ST's MDmesh™ M2 EP strip layout and enhanced vertical structure to simultaneously reduce conduction loss and suppress turn-off switching loss-enabling operation beyond 150 kHz without sacrificing efficiency or reliability. Its Zener-protected gate and 100% avalanche-tested construction ensure robustness under transient overvoltage and unclamped inductive switching.

The MOSFET delivers low C_oss (112 pF) and ultra-low C_oss,eq (454 pF at 0–480 V), enabling soft-switching behavior in zero-voltage transition (ZVT) topologies. Gate threshold voltage (2–4 V) and tight R_DS(on) distribution (0.076 Ω typ., 0.087 Ω max.) support predictable drive design across temperature and production lots.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands DC bus voltages up to 400 V in 400 V-class SMPS with 50% margin for transients.
R_DS(on) typ.	0.076 Ω @ V_GS = 10 V, I_D = 17 A - Enables <1.2 W conduction loss at 34 A continuous drain current (T_C = 25 °C).
Q_g	55 nC - Low gate charge reduces driver power demand and enables fast, low-loss switching at >200 kHz.
E_off	13–14.5 µJ @ V_DD = 400 V, I_D = 2.5–5 A - Very low turn-off loss supports high-efficiency operation in hard- and soft-switching topologies.
C_oss,eq	454 pF (0–480 V) - Linearized output capacitance improves ZVS predictability and reduces dead-time sensitivity.
R_thj-case	0.50 °C/W - Enables 250 W dissipation at ΔT = 125 °C, supporting compact heatsink integration in high-power adapters.
E_AS	800 mJ - Rated single-pulse avalanche energy ensures reliable operation during short-circuit or overload events without derating.

Pinout & Package

STW42N60M2-EP is housed in a TO-247 package with isolated tab (drain-connected), offering low thermal resistance and high-power handling. The package complies with ECOPACK® environmental standards and features a 3-pin configuration with industry-standard mechanical dimensions (A = 4.85–5.15 mm, D = 19.85–20.15 mm, L = 14.20–14.80 mm).

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	High-impedance control input; requires <55 nC charge for full enhancement; Zener-protected to ±25 V.
2 (Lead)	Drain (D)	Main high-voltage power terminal; electrically connected to metal tab; rated for 600 V blocking and 136 A pulsed current.
3 (Lead)	Source (S)	Power return path and reference for gate drive; forms low-inductance source loop critical for EMI control.

Key Features

Feature	Design Value
Extremely low gate charge	55 nC total gate charge enables efficient high-frequency gate driving with minimal driver losses.
Optimized C_oss profile	112 pF C_oss and 454 pF C_oss,eq support stable zero-voltage switching across wide V_DS range.
Very low turn-off switching losses	13–14.5 µJ E_off at 400 V/5 A reduces thermal stress and improves system efficiency above 150 kHz.
100% avalanche tested	Each unit validated for 800 mJ single-pulse avalanche energy, ensuring field reliability under fault conditions.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient gate-source voltage, eliminating external clamping.

Applications

Server PSU

Industrial UPS

Use Scenario: Primary-side switch in 3.5 kW resonant LLC converter operating at 250 kHz.

IC Role / Device Role / Timing Role: High-side power switch managing 400 V DC bus with ZVS turn-on and controlled dV/dt turn-off.

Use Value: 0.076 Ω R_DS(on) and 13 µJ E_off enable >96.5% peak efficiency while maintaining <85 °C case temperature.

Use Scenario: Inverter bridge switch in 10 kVA online UPS with active PFC front-end.

IC Role / Device Role / Timing Role: Hard-switched output stage transistor handling 600 V bus and 34 A RMS load current.

Use Value: 0.50 °C/W R_thj-case and 800 mJ E_AS sustain 10-second overload without thermal shutdown or avalanche failure.

EV On-board Charger

Telecom Rectifier

Use Scenario: Phase-shifted full-bridge primary switch in 6.6 kW bidirectional OBC (AC/DC + DC/AC).

IC Role / Device Role / Timing Role: Synchronous rectifier-compatible high-side switch with fast body diode recovery (t_rr = 438 ns).

Use Value: 1.6 V V_SD and 9 µC Q_rr minimize reverse recovery loss during commutation, reducing heatsink size by 30%.

Use Scenario: Main switch in 3 kW telecom rectifier with 48 V output and 380 V PFC bus.

IC Role / Device Role / Timing Role: High-reliability power switch operating continuously at 85 °C ambient with 150 °C junction limit.

Use Value: Stable R_DS(on) (±10% from –50 °C to 150 °C) and 150 °C T_jmax ensure long-term parametric consistency in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH42N60P3	Higher R_DS(on) (0.095 Ω typ.), higher Q_g (72 nC), no integrated Zener protection.	Requires external gate clamp; less suitable for unclamped inductive loads or high-dV/dt environments.	Prefer when cost sensitivity outweighs avalanche robustness and gate protection needs.
IPP60R099C7	Lower V_DSS (600 V same), lower R_DS(on) (0.099 Ω), but higher C_oss,eq (620 pF) and no 100% avalanche test.	Limited to <120 kHz operation due to slower C_oss discharge; not recommended for >150 kHz ZVS designs.	Select only for lower-frequency, cost-driven industrial SMPS where E_AS margin is noncritical.

Compared with IXFH42N60P3 and IPP60R099C7, STW42N60M2-EP provides superior dV/dt ruggedness (50 V/ns), guaranteed avalanche capability, and tighter C_oss linearity-making it the preferred choice for high-reliability, high-frequency server and telecom power supplies.

Availability

STW42N60M2-EP is available at Aetrix Electronics and suitable for server power supplies, industrial uninterruptible power systems, and EV on-board chargers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STW42N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STW42N60M2-EP belongs to the MDmesh™ M2 EP high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in datacenter, telecom, and renewable energy applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW42N60M2-EP supports 22 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied with appropriate heatsinking and airflow.

Does STW42N60M2-EP have an integrated body diode, and what are its recovery characteristics?

Yes, it includes a fast intrinsic body diode with t_rr = 438 ns (T_j = 25 °C) and Q_rr = 9 µC under standard test conditions (I_SD = 34 A, di/dt = 100 A/µs, V_DD = 60 V). At 150 °C junction temperature, t_rr increases to 538 ns and Q_rr to 12 µC, requiring careful dead-time optimization in synchronous rectification designs.

Can STW42N60M2-EP be used in avalanche mode, and what is its rated single-pulse energy?

Yes, every unit is 100% tested for single-pulse avalanche capability with E_AS = 800 mJ at T_j = 25 °C (Table 4). This rating applies to repetitive or non-repetitive events limited by junction temperature; operation beyond this requires SOA validation per Figure 4 in the datasheet.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 2 V to 4 V at T_C = 25 °C (Table 5), with typical variation shown in Figure 13: normalized V_GS(th) decreases to ~0.85× nominal at 150 °C. This negative temperature coefficient ensures inherent current sharing stability in paralleled configurations.

STW42N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 87mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW42N60M2-EP FAQ

1.How can I place an order for STW42N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STW42N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW42N60M2-EP reliable?

The price and inventory of STW42N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW42N60M2-EP is usually 5 days.

3.What payment methods are accepted for STW42N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW42N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW42N60M2-EP?

STW42N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW42N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW42N60M2-EP?

For technical support, including STW42N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW42N60M2-EP requirements.

6.How does Aetrix verify that STW42N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STW42N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW42N60M2-EP meets industry standards.

7.What is the process for return or replacement of STW42N60M2-EP?

All STW42N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STW42N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW42N60M2-EP part is unused and in its original packaging.

Return procedure for STW42N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…