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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW43NM60N

Name: STW43NM60N
Brand: STMicroelectronics
SKU: STW43NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW43NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW43NM60N.pdf

Description:: MOSFET N-CH 600V 35A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,287

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Product details

Overview

STW43NM60N from STMicroelectronics is an N-channel 600 V, 35 A, 0.075 Ω R_DS(on) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant converters. It delivers low gate charge (130 nC), high avalanche ruggedness (1000 mJ), and fast switching (t_r = 45 ns) in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STW43NM60N datasheet, STW43NM60N pinout, STW43NM60N application, or STW43NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.075 Ω R_DS(on) at V_GS = 10 V, 130 nC total gate charge, 150 °C max junction temperature, and TO-247 thermal resistance of 0.49 °C/W.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure with strip layout, enabling ultra-low R_DS(on) × Q_g figure-of-merit (≈10.3 Ω·nC). Its 100% avalanche-tested design supports unclamped inductive switching with I_AS = 14 A and E_AS = 1000 mJ at T_j = 25 °C.

The MOSFET features low C_iss (4200 pF), low C_oss (290 pF), and low C_rss (30 pF) at V_DS = 50 V, enabling high dv/dt immunity (30 V/ns typical) and reduced switching losses in ZVS/ZCS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 80% of rated voltage (480 V) during hard-switching transitions without breakdown
R_DS(on) max	0.088 Ω @ V_GS = 10 V, I_D = 17.5 A - Enables <2.5 W conduction loss at 35 A continuous current
Q_g	130 nC - Reduces gate drive power requirement and enables use with standard 1–2 A gate drivers
I_D (T_C = 100 °C)	22 A - Supports sustained operation in thermally constrained enclosures up to 100 °C case temperature
E_AS	1000 mJ - Allows reliable energy absorption during single-pulse inductive turn-off events
R_thj-case	0.49 °C/W - Enables 255 W dissipation at ΔT = 125 °C, supporting high-power density designs
dv/dt immunity	30 V/ns typical - Resists false turn-on in high-noise bridge-leg configurations

Pinout & Package

TO-247 package: isolated tab (drain), 3-pin through-hole mounting with 5.45 mm lead pitch. Thermal path optimized via copper slug under drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for source loop minimization in high-di/dt applications
2 (Gate)	Control input for channel modulation	High-impedance node requiring <1.4 Ω series gate resistor to damp ringing and limit peak current
3 (Drain)	Main power output / high-side switch node	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to same potential

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse robustness to 1000 mJ at T_j = 25 °C, eliminating need for external snubbers in flyback/PFC
Low C_iss/C_oss ratio	4200 pF / 290 pF = 14.5 - Improves efficiency in LLC resonant converters by reducing capacitive switching loss
MDmesh™ II vertical structure	Reduces R_DS(on) × Q_g product to 10.3 Ω·nC - Enables >98% efficiency in 3.3 kW server PSUs
Low gate input resistance	1.4 Ω - Minimizes gate oscillation risk and simplifies driver stage design
Enhanced diode recovery	t_rr = 540 ns @ T_j = 25 °C - Reduces cross-conduction loss in synchronous rectification and half-bridge topologies

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switching in 1–3 kW open-frame AC/DC supplies with active PFC and LLC resonant DC/DC stages.

IC Role / Device Role / Timing Role: High-voltage power switch in boost PFC and primary-side FET of resonant converter.

Use Value: 0.075 Ω R_DS(on) and 130 nC Q_g enable >96% full-load efficiency while maintaining <85 °C case temperature.

Use Scenario: High-density 48 V intermediate bus converters in datacenter rack PSUs.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology operating at 200–500 kHz.

Use Value: Low C_rss (30 pF) and 30 V/ns dv/dt immunity suppress shoot-through risk during high-frequency zero-voltage switching.

Solar Microinverters

Induction Heating Systems

Use Scenario: DC/AC H-bridge in single-phase microinverters converting 30–60 V PV input to 230 V grid output.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in full-bridge inverter leg.

Use Value: Avalanche rating (1000 mJ) handles reverse-recovery energy from body diode during dead-time commutation.

Use Scenario: Half-bridge inverter driving 20–100 kHz resonant tank in domestic induction cooktops.

IC Role / Device Role / Timing Role: Main power switch handling 15–25 A RMS load current with repetitive 140 A pulsed drain current.

Use Value: 22 A continuous current rating at 100 °C case ensures stable operation under sustained thermal stress in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C6	650 V, 0.099 Ω R_DS(on), 120 nC Q_g, TO-220FP package	Lower power density due to higher R_DS(on) and smaller package thermal capability	Select when board space is constrained and power level ≤1.2 kW; requires larger heatsink for same current
IXFH42N60P	600 V, 0.095 Ω R_DS(on), 150 nC Q_g, TO-247 package, no avalanche rating	Lacks 100% avalanche testing; higher gate charge increases driver complexity	Prefer where cost sensitivity outweighs ruggedness requirements and gate drive resources are abundant

Compared with IPP60R099C6 and IXFH42N60P, STW43NM60N offers the lowest R_DS(on) × Q_g product and guaranteed avalanche energy, making it optimal for compact, high-efficiency 2–4 kW industrial converters where reliability under transient overload is critical.

Availability

STW43NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term manufacturing continuity.

Supply support for STW43NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in telecom rectifiers, server PSUs, and renewable energy inverters.

FAQ

What is the maximum safe operating temperature for STW43NM60N?

The absolute maximum junction temperature is 150 °C. Operation above this value risks permanent degradation of the silicon die and oxide layer. Derating is required above 100 °C case temperature, where continuous drain current drops to 22 A. Thermal design must ensure R_thj-case ≤ 0.49 °C/W and adequate heatsink interface resistance.

Does STW43NM60N require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V to –10 V is optional and improves noise immunity but is not required for functional operation per datasheet specifications.

Can STW43NM60N replace STW45NM50 in an existing design?

Yes, with verification. STW43NM60N has higher V_DSS (600 V vs. 500 V), lower R_DS(on) (0.075 Ω vs. 0.085 Ω), and higher Q_g (130 nC vs. 110 nC). Layout changes may be needed to accommodate TO-247 mechanical dimensions, and gate driver slew rate should be checked to avoid excessive peak current during faster switching transitions.

Is the body diode suitable for synchronous rectification?

The integrated body diode has t_rr = 540 ns and Q_rr = 12 µC at 25 °C, making it usable in moderate-frequency synchronous rectification (≤100 kHz). However, its softness factor is not specified, and reverse recovery current (I_RRM = 44 A) exceeds typical synchronous FET ratings - external Schottky clamping is recommended for high-reliability 200+ kHz designs.

STW43NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 88mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 255W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW43NM60N FAQ

1.How can I place an order for STW43NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW43NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW43NM60N reliable?

The price and inventory of STW43NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW43NM60N is usually 5 days.

3.What payment methods are accepted for STW43NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW43NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW43NM60N?

STW43NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW43NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW43NM60N?

For technical support, including STW43NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW43NM60N requirements.

6.How does Aetrix verify that STW43NM60N is sourced from the original manufacturer or authorized distributors?

All STW43NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW43NM60N meets industry standards.

7.What is the process for return or replacement of STW43NM60N?

All STW43NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW43NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW43NM60N part is unused and in its original packaging.

Return procedure for STW43NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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