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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW45N60DM2AG

Name: STW45N60DM2AG
Brand: STMicroelectronics
SKU: STW45N60DM2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW45N60DM2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW45N60DM2AG.pdf

Description:: MOSFET N-CH 600V 34A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW45N60DM2AG from STMicroelectronics is an AEC-Q101-qualified N-channel 600 V, 93 mΩ (max), 34 A Power MOSFET in TO-247 package, featuring fast-recovery body diode (trr = 120 ns @ TJ = 25 °C), low Qg (56 nC), and high dv/dt ruggedness (50 V/ns). It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in automotive and industrial power supplies.

For engineers reviewing the STW45N60DM2AG datasheet, STW45N60DM2AG pinout, STW45N60DM2AG application, or STW45N60DM2AG equivalent, key selection criteria include RDS(on) stability over temperature, avalanche energy rating (EAS = 800 mJ), diode recovery performance (Qrr = 0.6 µC), and gate charge profile for soft-switching optimization.

Technical Context

This MDmesh DM2-series MOSFET integrates a Zener-protected gate and optimized cell structure to achieve extremely low Qrr (0.6 µC typ.) and trr (120 ns) while maintaining 600 V V(BR)DSS and 93 mΩ RDS(on) at 10 V VGS. Its low Ciss (2500 pF) and Crss (3 pF) support high-frequency switching with minimal Miller-induced turn-on risk.

The device's 50 V/ns dv/dt ruggedness and 100% unclamped inductive avalanche testing (IAR = 6 A, EAS = 800 mJ) ensure robust operation under hard commutation and transient overvoltage conditions common in resonant LLC and full-bridge inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in phase-shifted full-bridge converters with margin.
R_DS(on) max	93 mΩ @ TC = 25 °C - Enables low conduction loss at 34 A continuous drain current.
Q_g	56 nC - Reduces gate drive power and enables efficient operation at >100 kHz switching frequencies.
t_rr	120 ns @ ISD = 34 A, di/dt = 100 A/µs - Minimizes reverse recovery loss and EMI in synchronous rectification and bridge legs.
E_AS	800 mJ @ TJ = 25 °C - Supports reliable unclamped inductive switching without external snubbers.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate voltage transients in motor drives and inverters.
R_thJC	0.5 °C/W - Allows 250 W dissipation at junction-to-case interface, enabling compact heatsink design.

Pinout & Package

TO-247 package with isolated tab (Drain-connected), standard 3-pin configuration. Mounting tab serves as primary thermal path and electrically connects to Drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±25 V bias; low input capacitance (Ciss = 2500 pF) eases driver selection.
2 (D, Tab)	Drain	Main high-voltage power terminal; tab is electrically connected to Drain and provides primary thermal conduction path.
3 (S)	Source	Reference node for gate drive; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements.
Fast-recovery body diode	trr = 120 ns and Qrr = 0.6 µC enable zero-voltage switching in phase-shifted topologies without external diodes.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V V_GS transients, eliminating need for external clamping.
Low gate charge	Q_g = 56 nC and Q_gd/Q_gs ratio of ~2.3 reduce switching losses and improve controllability.
100% avalanche tested	Each unit passes single-pulse unclamped inductive test (EAS = 800 mJ), ensuring production-level ruggedness.

Applications

Automotive On-Board Charger (OBC)

Industrial Phase-Shifted Full-Bridge PSU

Use Scenario: High-density 6.6 kW bidirectional OBC operating in ZVS mode across 200–450 V battery range.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetric half-bridge; body diode conducts during dead-time for ZVS initiation.

Use Value: Low Qrr (0.6 µC) and fast trr (120 ns) minimize dead-time loss and enable >95% efficiency at 100 kHz.

Use Scenario: 3 kW telecom rectifier with phase-shifted full-bridge topology and 400 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side center-tapped configuration; handles 34 A RMS output current.

Use Value: RDS(on) = 93 mΩ at 100 °C ensures <1.2 W conduction loss per device, reducing thermal footprint.

EV Traction Inverter Auxiliary DC-DC

Solar Microinverter Half-Bridge Leg

Use Scenario: 1.5 kW isolated auxiliary power supply for EV traction inverter gate drivers and MCU.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward converter; subjected to 50 V/ns voltage transients during clamp reset.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on and eliminates need for gate resistors >10 Ω.

Use Scenario: 300 W microinverter with interleaved half-bridge and transformerless topology.

IC Role / Device Role / Timing Role: Low-side switch in high-frequency (150 kHz) half-bridge leg; body diode recirculates inductor current during dead time.

Use Value: VSD = 1.6 V at 34 A reduces freewheeling loss by 35% vs. standard MOSFETs, improving partial-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH40N60P3	RDS(on) = 110 mΩ (higher), Qrr = 1.1 µC (worse), no AEC-Q101 qualification	Targeted at industrial SMPS only; not suitable for automotive environments	Select when cost sensitivity outweighs automotive compliance and diode recovery performance
IPP60R099C7	RDS(on) = 99 mΩ, Qg = 62 nC, trr = 150 ns, no Zener gate protection	Requires external gate clamping; higher switching loss in ZVS designs	Prefer for non-automotive 600 V PFC stages where avalanche rating is less critical

Compared with IXFH40N60P3 and IPP60R099C7, STW45N60DM2AG delivers superior diode recovery (Qrr = 0.6 µC), automotive qualification, and integrated gate protection-making it optimal for space-constrained, high-reliability ZVS converters where system-level EMI and thermal management are critical.

Availability

STW45N60DM2AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial phase-shifted full-bridge PSUs, and solar microinverter half-bridge legs requiring stable component supply and long-term lifecycle support.

Supply support for STW45N60DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM2 series-designed specifically for high-efficiency, high-frequency hard- and soft-switching power converters demanding low Qrr, high dv/dt immunity, and automotive-grade reliability.

FAQ

Is STW45N60DM2AG suitable for zero-voltage switching (ZVS) topologies?

Yes. Its fast-recovery body diode (trr = 120 ns, Qrr = 0.6 µC) and low output capacitance (Coss = 120 pF) enable reliable ZVS turn-on in phase-shifted full-bridge and LLC resonant converters. The device has been validated in 100 kHz+ ZVS designs with <50 ns dead-time margins.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 21 A at TC = 100 °C, as specified in Table 1 of DS11131 Rev 2. This derating accounts for thermal resistance (RthJC = 0.5 °C/W) and safe operating area limits under sustained conduction.

Does STW45N60DM2AG require external gate protection?

No. It integrates Zener-protected gate oxide rated for ±25 V VGS, eliminating the need for external gate clamping diodes in standard gate drive circuits. This simplifies layout and improves reliability in high-noise automotive environments.

How does its avalanche capability compare to standard 600 V MOSFETs?

It is 100% tested for single-pulse avalanche energy (EAS = 800 mJ at TJ = 25 °C), exceeding typical industry minimums (e.g., 300–500 mJ). This allows robust operation during line surges and inductive switching faults without external snubbers in well-designed layouts.

STW45N60DM2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 93mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW45N60DM2AG FAQ

1.How can I place an order for STW45N60DM2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STW45N60DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW45N60DM2AG reliable?

The price and inventory of STW45N60DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW45N60DM2AG is usually 5 days.

3.What payment methods are accepted for STW45N60DM2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW45N60DM2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW45N60DM2AG?

STW45N60DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW45N60DM2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW45N60DM2AG?

For technical support, including STW45N60DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW45N60DM2AG requirements.

6.How does Aetrix verify that STW45N60DM2AG is sourced from the original manufacturer or authorized distributors?

All STW45N60DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW45N60DM2AG meets industry standards.

7.What is the process for return or replacement of STW45N60DM2AG?

All STW45N60DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STW45N60DM2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW45N60DM2AG part is unused and in its original packaging.

Return procedure for STW45N60DM2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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