STMicroelectronics STW45N60DM6

Overview

STW45N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, designed for high-efficiency bridge topologies and ZVS phase-shift converters. It delivers 600 V V_DS, 85 mΩ typ. R_DS(on) at V_GS = 10 V, 30 A continuous drain current at T_C = 25 °C, and features a fast-recovery body diode with Q_rr = 0.5 µC and t_rr = 110 ns at 25 °C - enabling low-loss switching in hard- and soft-switching SMPS.

For engineers reviewing the STW45N60DM6 datasheet, STW45N60DM6 pinout, STW45N60DM6 application, or STW45N60DM6 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 44 nC total gate charge, TO-247 package thermal resistance (R_thJC = 0.6 °C/W), and Zener-protected gate - critical for reliable operation in high-voltage industrial power supplies and solar inverters.

Technical Context

This device implements ST's MDmesh DM6 silicon architecture, combining ultra-low Q_rr and t_rr with optimized cell density to achieve 85 mΩ typ. R_DS(on) at 600 V - a 15% improvement over prior MDmesh generations. Its intrinsic gate resistance is 1.5 Ω, and C_iss/C_oss/C_rss are 1920 pF / 120 pF / 2 pF at V_DS = 100 V, supporting high-frequency switching up to 500 kHz.

The integrated fast-recovery body diode operates with V_SD = 1.6 V at I_SD = 30 A and exhibits controlled reverse recovery behavior (I_RRM = 9 A, Q_rr = 0.5 µC) under di/dt = 100 A/µs - essential for minimizing commutation losses in synchronous rectification and LLC resonant converters.

Key Specifications

Pinout & Package

STW45N60DM6 is housed in a TO-247 package with isolated tab (drain-connected), offering superior thermal performance and creepage distance for 600 V applications. The package features a 20.0 mm × 15.6 mm footprint, 4.85–5.15 mm height, and 3.55–3.65 mm mounting hole diameter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXFH40N60P and IPP60R099C7, STW45N60DM6 uniquely combines 600 V rating, 0.5 µC Q_rr, 100 V/ns dv/dt, and Zener gate protection - making it optimal for high-efficiency, high-reliability ZVS and hard-switching industrial power stages where diode recovery and transient immunity are decisive.

Availability

STW45N60DM6 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar string inverters, phase-shifted full-bridge converters, and motor drive half-bridges requiring stable component supply and long-term lifecycle support.

Supply support for STW45N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STW45N60DM6 belongs to the MDmesh DM6 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in next-generation SMPS, renewable energy inverters, and motor control systems demanding low conduction and switching losses.

FAQ

What is the maximum continuous drain current for STW45N60DM6 at 100 °C case temperature?

The maximum continuous drain current is 19 A at T_C = 100 °C, as specified in Table 1 of DS11664 Rev 4. This derating reflects thermal limitations of the TO-247 package and silicon, requiring proper heatsinking to sustain full 30 A operation at lower case temperatures.

Does STW45N60DM6 have an integrated body diode, and what are its key recovery parameters?

Yes, it features an integrated fast-recovery body diode with t_rr = 110 ns and Q_rr = 0.5 µC at T_J = 25 °C, ISD = 30 A, and di/dt = 100 A/µs. At 150 °C junction temperature, t_rr increases to 215 ns and Q_rr to 2 µC - values critical for designing snubberless ZVS circuits.

What is the thermal resistance from junction to case (R_thJC) for the TO-247 package?

R_thJC is 0.6 °C/W for the TO-247 package, measured under standard test conditions per JEDEC JESD51-14. This value enables 210 W total power dissipation at T_C = 25 °C and is confirmed in Table 2 of the official datasheet DS11664.

Is STW45N60DM6 suitable for avalanche-prone applications like inductive load switching?

Yes - every unit undergoes 100% single-pulse avalanche testing with E_AS = 630 mJ at V_DD = 50 V and I_AR = 6 A. This validated ruggedness supports reliable operation in unclamped inductive switching, such as relay driving and solenoid control, without external protection.