Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW45NM50

Name: STW45NM50
Brand: STMicroelectronics
SKU: STW45NM50
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW45NM50

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW45NM50.pdf

Description:: MOSFET N-CH 500V 45A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:491

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW45NM50 from STMicroelectronics is an N-channel 500 V, 45 A high-voltage power MOSFET in TO-247 package, featuring 0.08 Ω typ. R_DS(on), 100% avalanche tested, and optimized for hard-switching SMPS, PFC stages, and industrial motor drives. It delivers low gate charge (113 nC), high dv/dt immunity (15 V/ns), and robust unclamped inductive switching capability.

For engineers reviewing the STW45NM50 datasheet, STW45NM50 pinout, STW45NM50 application, or STW45NM50 equivalent, key selection criteria include its 500 V V_DS, 45 A continuous drain current at T_C = 25 °C, 0.32 °C/W junction-to-case thermal resistance, and verified 700 mJ single-pulse avalanche energy - all critical for high-reliability offline power conversion designs.

Technical Context

This MDmesh™ II device uses ST's proprietary strip-based vertical silicon architecture to achieve ultra-low R_DS(on) × area trade-off while maintaining high breakdown voltage. Its dynamic performance is defined by low C_iss (3290 pF), C_oss (865 pF), and Cr_ss (140 pF) at V_DS = 25 V, enabling fast switching with reduced EMI and gate drive loss.

The integrated source-drain diode supports synchronous rectification and freewheeling in bridge topologies, with measured t_rr = 454 ns and Q_rr = 9380 nC under 45 A, 100 A/µs conditions - parameters directly influencing commutation losses and snubber design in resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V AC mains-derived DC bus with 25% safety margin
R_DS(on) max	0.1 Ω - limits conduction loss to ≤20.25 W at 45 A ID
I_D cont @ T_C=25°C	45 A - enables ≥1.5 kW output in forced-air-cooled 100 kHz flyback or LLC
E_AS	700 mJ - withstands unclamped inductive energy without failure in PFC boost chokes
Q_g	113 nC - determines gate driver peak current requirement (~2.4 A @ 47 ns rise)
dv/dt rating	15 V/ns - ensures noise-immune operation in high-di/dt half-bridge leg commutation
R_thj-case	0.32 °C/W - allows 125 °C T_j at 390 W P_TOT, supporting compact heatsink design

Pinout & Package

TO-247 package: 3-terminal through-hole metal-can housing with isolated tab (drain-connected), standard lead pitch (5.45 mm), and 20.0 mm × 15.6 mm footprint. Thermal path optimized via direct die-to-case copper interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for PCB ground plane; ties to source of synchronous rectifier in secondary-side control
2 (Gate)	Control input for channel modulation	High-impedance node requiring <1.7 Ω series gate resistor to damp ringing during 113 nC charge/discharge
3 (Drain)	Main high-voltage power terminal	Internally bonded to metal tab - must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 700 mJ E_AS per unit - eliminates need for external clamping in cost-sensitive PFC designs
Low C_iss/C_oss ratio	3290 pF / 865 pF = 3.8 - improves ZVS initiation in LLC resonant converters above 200 kHz
High dv/dt immunity	15 V/ns rating validated at I_SD = 45 A, di/dt = 400 A/µs - prevents false turn-on in high-side configurations
MDmesh™ II silicon process	Enables 0.08 Ω R_DS(on) at 500 V - reduces conduction loss by >35% vs. planar MOSFETs in same package

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase inverter stage for 5–10 kW HVAC compressors operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT replacement topology, handling 45 A RMS phase current.

Use Value: 0.1 Ω R_DS(on) and 390 W P_TOT enable >98.2% efficiency at full load with passive heatsinking.

Use Scenario: Primary-side switch in 1.5 kW server ATX PSUs using active clamp forward or asymmetrical half-bridge.

IC Role / Device Role / Timing Role: Main power switch subjected to 400 V DC bus, 100 kHz switching, and repetitive avalanche stress during clamp cycle.

Use Value: Verified 15 A repetitive avalanche current and 700 mJ E_AS eliminate need for external RCD snubbers.

Telecom Rectifier Modules

Induction Heating Half-Bridge

Use Scenario: Hot-swap OR-ing FET and primary switch in -48 V telecom rectifiers with 200 V transient surge protection.

IC Role / Device Role / Timing Role: Bidirectional blocking device in redundant power feed paths, rated for 500 V reverse standoff.

Use Value: 500 V V_BRDSS and 10 µA I_DSS at 500 V ensure leakage-limited standby loss below 5 mW per module.

Use Scenario: 20–50 kHz resonant half-bridge in 3–5 kW domestic induction cooktops with variable load coupling.

IC Role / Device Role / Timing Role: Fast-switching power switch managing 45 A pulsed drain current and 180 A IDM peaks during burst-mode operation.

Use Value: 454 ns t_rr and 9380 nC Q_rr minimize body diode conduction loss during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH44N50P	R_DS(on) = 0.11 Ω, Q_g = 125 nC, E_AS = 520 mJ	Lower avalanche ruggedness; requires larger snubber in PFC	Preferred where gate drive strength exceeds 2.5 A and thermal margin >15 °C exists
IPP60R099C6	600 V rating, R_DS(on) = 0.099 Ω, C_oss = 1120 pF, no avalanche spec	Higher voltage headroom but untested avalanche performance	Suitable for 400 V AC-input systems needing long-term reliability without transient overstress

Compared with IXFH44N50P and IPP60R099C6, STW45NM50 provides superior avalanche ruggedness (700 mJ vs. 520 mJ/none) and lower C_oss, making it optimal for unclamped inductive loads and high-frequency PFC where diode recovery losses dominate efficiency.

Availability

STW45NM50 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, server PSU primary switches, and induction heating half-bridges requiring stable component supply across multi-year production cycles.

Supply support for STW45NM50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STW45NM50 belongs to the MDmesh™ II high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in 300–500 V DC bus applications.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STW45NM50 supports 28.4 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (DocID8477 Rev 6). This derating reflects thermal limitations of the TO-247 package and must be applied when heatsink temperature exceeds 75 °C in sealed enclosures.

Is the source-drain diode suitable for synchronous rectification?

No - the integrated body diode has t_rr = 454 ns and Q_rr = 9380 nC at 45 A, resulting in high reverse recovery loss. It is intended for freewheeling only; external Schottky or SiC diodes are required for synchronous rectification in secondary-side circuits.

Does STW45NM50 require a negative gate voltage for reliable turn-off?

No - the gate threshold voltage is 3–5 V, and the device is fully enhanced at V_GS = 10 V. However, applying –5 V to 0 V during off-state improves noise immunity in high-dv/dt environments, especially in high-side configurations where Miller-induced turn-on risk exists.

Can STW45NM50 replace STW45NM60 in existing designs?

No - STW45NM60 has 600 V rating and higher R_DS(on) (0.11 Ω). Substituting STW45NM50 in 600 V systems risks avalanche failure during line surges. It may be used only if the DC bus is confirmed ≤450 V with ≥10% margin and SOA curves are re-validated per Figure 2.

STW45NM50 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 417W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW45NM50 FAQ

1.How can I place an order for STW45NM50 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW45NM50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW45NM50 reliable?

The price and inventory of STW45NM50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW45NM50 is usually 5 days.

3.What payment methods are accepted for STW45NM50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW45NM50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW45NM50?

STW45NM50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW45NM50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW45NM50?

For technical support, including STW45NM50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW45NM50 requirements.

6.How does Aetrix verify that STW45NM50 is sourced from the original manufacturer or authorized distributors?

All STW45NM50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW45NM50 meets industry standards.

7.What is the process for return or replacement of STW45NM50?

All STW45NM50 units undergo pre-shipment inspection (PSI). If there is an issue with STW45NM50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW45NM50 part is unused and in its original packaging.

Return procedure for STW45NM50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…