STMicroelectronics STW45NM50FD

Overview

STW45NM50FD from STMicroelectronics is an N-channel FDmesh™ Power MOSFET with 500 V V_DSS, 0.07 Ω R_DS(on) max at V_GS = 10 V, 45 A continuous drain current at T_C = 25 °C, and integrated fast-recovery body diode. It is designed for high-efficiency switching in ZVS phase-shift converters and bridge topologies.

For engineers reviewing the STW45NM50FD datasheet, STW45NM50FD pinout, STW45NM50FD application, or STW45NM50FD equivalent, key selection criteria include avalanche ruggedness (22.5 A I_AR, 800 mJ E_AS), low gate charge (92 nC total), dv/dt immunity (20 V/ns), and thermal resistance (0.3 °C/W R_thj-case).

Technical Context

This MOSFET employs ST's FDmesh™ structure to co-optimize conduction loss and switching speed while embedding a fast-recovery body diode with t_rr = 200 ns (T_j = 25 °C) and Q_rr = 1600 nC - enabling robust operation in hard- and soft-switched bridge configurations without external anti-parallel diodes.

Its gate threshold voltage (3–5 V) and low input capacitance (C_iss = 3600 pF) support stable drive with standard 10 V gate drivers; the 2 Ω gate input resistance minimizes oscillation risk, and the 100% avalanche-tested rating ensures reliability under unclamped inductive load conditions.

Key Specifications

Pinout & Package

Delivered in TO-247 package with isolated tab (drain-connected), standard 3-pin layout optimized for high-current PCB routing and thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXFH40N50P and IPP60R099C6, STW45NM50FD uniquely combines 500 V rating, fast diode (200 ns t_rr), and guaranteed avalanche ruggedness - making it optimal for ZVS bridge converters and industrial inverters where reliability under transient stress is non-negotiable.

Availability

STW45NM50FD is available at Aetrix Electronics and suitable for phase-shift ZVS converters, industrial motor drives, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for STW45NM50FD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's FDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in resonant and hard-switched topologies where low R_DS(on), fast diode recovery, and avalanche robustness are essential.

FAQ

Is STW45NM50FD suitable for gate driving with 5 V logic?

No. Its gate threshold voltage ranges from 3 V to 5 V, but full enhancement and specified R_DS(on) require V_GS = 10 V. Driving at 5 V results in incomplete turn-on, elevated R_DS(on), and excessive conduction loss - use a dedicated 10–15 V gate driver with ≥1 A peak output capability.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 150 °C, but continuous operation should be limited to T_j ≤ 130 °C to ensure long-term reliability. At T_C = 100 °C, the device delivers 28.4 A ID, and thermal design must maintain R_thj-case ≤ 0.3 °C/W with adequate heatsinking and airflow.

Does the body diode support bidirectional current in synchronous rectification?

Yes. The intrinsic fast-recovery body diode conducts source-to-drain current (I_SD = 45 A continuous, 180 A pulsed) with V_SD = 1.5 V at 45 A and t_rr = 200 ns - enabling efficient synchronous rectification in LLC and phase-shift converters without external diodes.

Can STW45NM50FD replace IGBTs in motor inverter applications?

Yes, in 3–7.5 HP inverters operating below 16 kHz. Its low R_DS(on) and fast switching reduce both conduction and switching losses versus typical 600 V IGBTs, while its avalanche rating handles motor inductive energy better than most MOSFETs - though gate drive complexity increases due to higher Q_g.