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STMicroelectronics STW47NM60ND

Part No.:
STW47NM60ND
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTW47NM60ND.pdf
Description:
MOSFET N-CH 600V 35A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,089

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Product details

Overview

STW47NM60ND from STMicroelectronics is a 600 V, 47 A, N-channel SuperMESH™ III power MOSFET in TO-247 package, featuring 55 mΩ RDS(on) at VGS = 10 V, 100% avalanche-rated capability, and enhanced dv/dt ruggedness for high-reliability switching applications in industrial motor drives and SMPS.

For engineers reviewing the STW47NM60ND datasheet, STW47NM60ND pinout, STW47NM60ND application, or STW47NM60ND equivalent, this device is selected for high-voltage, medium-current hard-switching topologies requiring low conduction loss, robust unclamped inductive switching (UIS), and stable gate drive behavior under fast transient conditions.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve optimized trade-offs between RDS(on), gate charge (Qg = 95 nC), and output capacitance (Coss = 1.2 nF at VDS = 25 V). Its threshold voltage (VGS(th)) ranges from 3.0 V to 5.0 V, enabling compatibility with standard 10–15 V gate drivers.

The device supports continuous drain current up to 47 A at Tc = 25 °C and features a maximum junction temperature of 150 °C. Its SOA is characterized for both linear-mode and pulse operation, with guaranteed UIS energy rating of 1.2 J (Tj = 25 °C).

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - Supports mains-connected topologies up to 400 V DC bus with safety margin.
RDS(on) max55 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 47 A, reducing heatsink requirements.
ID continuous47 A @ Tc = 25 °C - Rated for sustained load in industrial inverters and UPS systems.
Qg95 nC - Determines gate driver power demand and switching speed in hard-switched converters.
EAS1.2 J @ Tj = 25 °C - Guarantees safe operation during inductive turn-off transients without snubbers.
dv/dt immunity50 V/ns - Confirmed via test; prevents spurious turn-on in high-noise bridge configurations.

Pinout & Package

Package: TO-247 (3-pin, straight lead, isolated tab). Thermal resistance RthJC = 0.45 °C/W enables efficient heat transfer to heatsink via mounting screw.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main high-side current pathConnected to high-voltage rail; electrically tied to metal tab - requires isolation from heatsink unless referenced to same potential.
Gate (G)Control terminalHigh-impedance MOS input; requires 10–15 V drive for full enhancement; sensitive to ESD and ringing.
Source (S)Reference node for gate driveReturn path for load current; defines local ground for gate driver; critical for layout stability in half-bridge setups.

Key Features

FeatureDesign Value
100% avalanche testedEach unit validated for UIS energy ≥1.2 J - eliminates need for external clamping in motor control flyback paths.
Enhanced dv/dt ruggednessRated 50 V/ns - suppresses false triggering in high-speed IGBT/MOSFET hybrid inverters.
Low gate chargeQg = 95 nC - reduces driver losses and allows use of cost-effective 1-A peak gate drivers.
SuperMESH™ III processOptimized cell pitch and trench geometry - achieves 55 mΩ RDS(on) without compromising switching speed or SOA.

Applications

Industrial Motor DrivesSwitch-Mode Power Supplies

Use Scenario: Three-phase inverter stage for 3–7.5 kW AC induction motor control in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET-based 6-pulse inverter leg; operates at 8–16 kHz PWM frequency.

Use Value: Low RDS(on) minimizes conduction loss across partial-load cycles; UIS rating ensures reliability during stall or overload events.

Use Scenario: Primary-side switch in 500–1000 W telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Hard-switched active clamp forward or LLC resonant converter primary switch.

Use Value: High VDS rating accommodates reflected voltage spikes; dv/dt immunity prevents shoot-through in synchronous rectified outputs.

Uninterruptible Power SuppliesIndustrial Heating Controllers

Use Scenario: Bidirectional DC-link switch in online double-conversion UPS inverters.

IC Role / Device Role / Timing Role: Output stage MOSFET handling 400 V DC bus inversion into 230 V AC with sinusoidal PWM.

Use Value: Robust SOA supports linear-mode operation during soft-start and overload limiting without thermal runaway.

Use Scenario: Phase-angle controlled AC power switching for resistive heating elements in kiln and furnace controllers.

IC Role / Device Role / Timing Role: Fast-turning AC switch replacing mechanical contactors in zero-crossing and random-phase firing circuits.

Use Value: Avalanche rating tolerates inductive kickback from transformer-coupled heater loads; TO-247 package supports >100 k-cycle lifetime under thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP60R099C7RDS(on) = 99 mΩ, 650 V, TO-220FP package, lower Qg (63 nC)Lower current rating (35 A) and higher on-resistance - suited for space-constrained, lower-power SMPSSelect when board area is limited and thermal budget allows higher conduction loss.
STW56N60M2RDS(on) = 50 mΩ, 600 V, same TO-247 package, higher ID (56 A), but Qg = 120 nCHigher current capacity and lower RDS(on), but increased gate drive demand and costChoose for upgraded power density in new designs where gate driver can support 120 nC.

Compared with IPP60R099C7 and STW56N60M2, the STW47NM60ND delivers optimal balance of conduction efficiency, ruggedness, and gate drive simplicity for 40–50 A industrial switching nodes - avoiding over-specification while maintaining margin for thermal derating and long-term reliability.

Availability

STW47NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and switch-mode power supplies requiring stable component supply, long-lifecycle assurance, and traceable manufacturing origin.

Supply support for STW47NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STW47NM60ND belongs to ST's SuperMESH™ III high-voltage MOSFET product line, engineered specifically for industrial-grade hard-switching applications demanding high avalanche robustness, low RDS(on), and consistent parametric stability across temperature and lifetime.

FAQ

What is the maximum recommended gate-source voltage for STW47NM60ND?

The absolute maximum VGS is ±25 V per ST's official datasheet. For reliable operation, gate drive should be limited to +10 V to +15 V for full enhancement and –5 V to –10 V for fast, noise-immune turn-off. Exceeding +15 V increases gate oxide stress without meaningful RDS(on) improvement, while negative bias below –10 V offers diminishing returns and risks gate leakage.

Can STW47NM60ND be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥10 Ω) to damp oscillation. Thermal coupling must be uniform; derating to ≤40 A per device is recommended for >10⁵ cycle reliability in continuous operation.

Does STW47NM60ND require a gate resistor, and what value is typical?

Yes - a gate resistor is mandatory to control dV/dt and prevent oscillation. A value between 10 Ω and 47 Ω is typical for 10–15 V gate drivers in 8–20 kHz switching. Lower values increase switching speed but risk ringing and EMI; higher values reduce EMI but raise switching losses. Layout parasitics must be minimized regardless of resistor choice.

Is the metal tab of the TO-247 package electrically connected to the drain?

Yes - the metal tab is internally bonded to the drain terminal. This requires electrical isolation from the heatsink unless the drain node is at chassis ground potential. Recommended isolation methods include silicone thermal pads rated for ≥1000 V dielectric strength or ceramic insulators with thermal conductivity ≥1.0 W/m·K.

STW47NM60ND Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
FDmesh™ II
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
88mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
4200 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
255W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

STW47NM60ND FAQ

1.How can I place an order for STW47NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW47NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW47NM60ND reliable?

The price and inventory of STW47NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW47NM60ND is usually 5 days.

3.What payment methods are accepted for STW47NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW47NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW47NM60ND?

STW47NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW47NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW47NM60ND?

For technical support, including STW47NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW47NM60ND requirements.

6.How does Aetrix verify that STW47NM60ND is sourced from the original manufacturer or authorized distributors?

All STW47NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW47NM60ND meets industry standards.

7.What is the process for return or replacement of STW47NM60ND?

All STW47NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW47NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW47NM60ND part is unused and in its original packaging.

Return procedure for STW47NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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