STMicroelectronics STW48N60DM2

Overview

STW48N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh™ DM2 series, designed for high-efficiency switching in bridge and ZVS phase-shift converters. It delivers 600 V V(BR)DSS, 0.065 Ω typ. RDS(on) at 10 V VGS, 40 A continuous drain current at 25 °C, and features an integrated fast-recovery body diode with 140 ns trr (Tj = 25 °C) and Zener-protected gate.

For engineers reviewing the STW48N60DM2 datasheet, STW48N60DM2 pinout, STW48N60DM2 application, or STW48N60DM2 equivalent, key selection criteria include dv/dt ruggedness (50 V/ns), low Qg (70 nC), Coss eq. (258 pF), avalanche energy rating (950 mJ), and TO-247 thermal resistance (0.42 °C/W).

Technical Context

This device implements ST's MDmesh™ DM2 silicon technology optimized for high-voltage hard-switching and resonant topologies. Its low Qrr (0.7 µC) and fast trr enable reduced switching losses in PFC and LLC stages, while the built-in back-to-back gate-source Zener diodes (±30 V breakdown) provide ESD robustness without external clamping.

The MOSFET supports high dv/dt operation (50 V/ns) under defined conditions (ISD ≤ 40 A, di/dt = 900 A/µs), and its SOA is characterized up to 100 °C case temperature. Thermal performance is anchored by Rthj-case = 0.42 °C/W, enabling 300 W dissipation at Tcase = 25 °C.

Key Specifications

Pinout & Package

STW48N60DM2 is housed in a TO-247 package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7 and IXFH48N60P, STW48N60DM2 uniquely combines Zener-protected gate, fast trr (140 ns), and 50 V/ns dv/dt ruggedness-making it optimal for ZVS, bridge, and high-noise industrial converters where reliability and integrated protection are critical.

Availability

STW48N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server PSUs, solar inverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW48N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW48N60DM2 belongs to the MDmesh™ DM2 family-engineered specifically for high-efficiency, high-frequency switching power supplies, PFC circuits, and resonant converters demanding low Qrr, fast diode recovery, and rugged dv/dt performance.

FAQ

Is STW48N60DM2 suitable for zero-voltage switching (ZVS) topologies?

Yes. With Coss eq. = 258 pF, Qrr = 0.7 µC, and trr = 140 ns at 25 °C, STW48N60DM2 is explicitly qualified for ZVS phase-shift and LLC resonant converters. Its low output capacitance and fast body diode recovery enable reliable soft-switching across full load range up to 500 kHz.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 25 A at Tcase = 100 °C, as specified in Table 2 of the official datasheet (DocID026927 Rev 2). This derating reflects thermal limits imposed by Rthj-case = 0.42 °C/W and Tj max = 150 °C.

Does STW48N60DM2 require external gate protection?

No. The device integrates back-to-back gate-source Zener diodes with ±30 V breakdown voltage (Table 9), providing inherent protection against gate overvoltage transients. External clamping is unnecessary unless system-level surge events exceed ±30 V with high energy.

How does the fast-recovery body diode compare to standard MOSFETs in bridge configurations?

At 140 ns trr and 0.7 µC Qrr (25 °C), STW48N60DM2's body diode recovers over 5× faster than typical 600 V planar MOSFETs (trr > 700 ns). This reduces cross-conduction loss, EMI generation, and thermal stress in half/full-bridge and synchronous rectifier applications.