STMicroelectronics STW48N60M2

Overview

STW48N60M2 from STMicroelectronics is an N-channel 600 V, 42 A MDmesh M2 Power MOSFET in TO-247 package with 70 mΩ max R_DS(on), 70 nC total gate charge, and 100% avalanche tested. It delivers low conduction loss and optimized switching performance for high-efficiency hard-switched PFC and main switch stages in industrial SMPS, solar inverters, and UPS systems.

For engineers reviewing the STW48N60M2 datasheet, STW48N60M2 pinout, STW48N60M2 application, or STW48N60M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 143 pF C_oss, Zener-protected gate, 150 °C max junction temperature, and 300 W power dissipation at T_C = 25 °C.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low R_DS(on) while maintaining robust switching behavior. Its C_oss profile is optimized for reduced turn-off loss and improved E_OSS efficiency across 0–480 V drain voltage range.

The integrated Zener-protected gate ensures ±25 V V_GS tolerance, and its 100% unclamped inductive switching (UIS) test guarantees 7 A repetitive avalanche current and 1 J single-pulse energy rating under defined conditions.

Key Specifications

Pinout & Package

TO-247 package with isolated tab (Drain-connected), standard 3-pin through-hole outline. Thermal resistance R_thJC = 0.42 °C/W enables high-power dissipation when mounted on properly sized heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXFH48N60P3 and IPP60R099C7, STW48N60M2 offers superior conduction efficiency at >20 A, built-in gate protection, and verified avalanche robustness-making it optimal for industrial SMPS where thermal margin and system-level reliability are critical.

Availability

STW48N60M2 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverter DC-DC stages, and UPS main inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW48N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW48N60M2 belongs to the MDmesh M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability hard-switched power conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STW48N60M2 supports 26 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10379 Rev 5. This value reflects thermal derating due to junction-to-case thermal resistance (0.42 °C/W) and maximum allowable junction temperature (150 °C). Operation above this current requires forced cooling or pulse-width limitation.

Does STW48N60M2 have an integrated body diode, and what are its key parameters?

Yes, STW48N60M2 includes a monolithic source-drain body diode rated for 42 A continuous and 168 A pulsed current. Key parameters include 1.6 V forward voltage at 21 A and 25 °C, 487 ns reverse recovery time at 42 A and 100 A/µs di/dt, and 9.1 µC reverse recovery charge-enabling efficient freewheeling in bridge configurations without external diodes.

How is the 100% avalanche testing performed, and what does it guarantee?

Each STW48N60M2 unit undergoes unclamped inductive switching (UIS) testing per JEDEC JESD22-A115, applying 7 A repetitive avalanche current with 1 J single-pulse energy at V_DD = 50 V and T_J = 25 °C. This guarantees minimum avalanche capability across the production lot-not just sample validation-and ensures robustness against inductive turn-off transients in real-world power circuits.

Can STW48N60M2 be used in zero-voltage switching (ZVS) topologies?

Yes, STW48N60M2 is suitable for ZVS applications due to its low and predictable C_oss (143 pF) and flat C_oss vs. V_DS curve, which enables precise resonant timing. However, its 70 nC Q_g and 31 nC Q_gd require careful gate driver sizing to ensure full enhancement before zero-voltage turn-on, particularly at frequencies above 200 kHz.