STMicroelectronics STW48N60M6

Overview

STW48N60M6 from STMicroelectronics is an N-channel 600 V, 39 A MDmesh M6 superjunction power MOSFET in TO-247 package, featuring 61 mΩ typical R_DS(on), 57 nC total gate charge, and 100% avalanche tested ruggedness. It delivers low conduction and switching losses for high-efficiency LLC and boost PFC converters operating at 100–300 kHz.

For engineers reviewing the STW48N60M6 datasheet, STW48N60M6 pinout, STW48N60M6 application, or STW48N60M6 equivalent, key selection criteria include its 100 V/ns MOSFET dv/dt ruggedness, 950 mJ single-pulse avalanche energy, Zener-protected gate, and 0.5 °C/W junction-to-case thermal resistance for high-power thermal management.

Technical Context

This MOSFET employs ST's MDmesh M6 silicon technology, optimizing R_DS(on) per die area while maintaining fast, soft-recovery body diode behavior (317 ns trr at 25 °C, 475 ns at 150 °C) and low Crss (3.1 pF) to minimize Miller-induced turn-on risk in hard-switched topologies.

Its gate threshold voltage (3.25–4.75 V) and low intrinsic gate resistance (1.8 Ω) support robust 10 V gate drive compatibility with standard isolated gate drivers, while the 15 V/ns peak diode recovery dv/dt rating ensures reliable operation in synchronous rectification and resonant converter freewheeling paths.

Key Specifications

Pinout & Package

TO-247 package: insulated plastic body with metal tab (drain-connected), axial lead configuration, 14.8 mm height, 20.15 mm length, 15.75 mm width, and 3.65 mm mounting hole diameter. Designed for bolt-down heatsinking with thermal interface material.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IXTH48N60L2 and IPP60R099C7, STW48N60M6 offers superior avalanche ruggedness and integrated gate protection at the expense of slightly higher Q_g than CoolMOS C7, making it optimal for reliability-critical 100–250 kHz industrial PFC and LLC designs.

Availability

STW48N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial DC-DC isolated converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for STW48N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC power conversion systems operating at 600 V class with demanding thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW48N60M6 supports 25 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12685 Rev 3. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does this MOSFET require a negative gate turn-off voltage?

No. The STW48N60M6 operates with 0 V to +10 V gate drive and does not require negative turn-off bias. Its gate threshold voltage (3.25–4.75 V) and low gate input resistance (1.8 Ω) ensure clean turn-off with 0 V gate potential, and the Zener protection eliminates risk of gate oxide damage from positive transients.

Can STW48N60M6 replace STW48N60M5 in existing designs?

Yes - STW48N60M6 is a direct drop-in replacement for STW48N60M5, offering identical pinout, package, and voltage rating, with improved R_DS(on) (61 mΩ vs. 69 mΩ typ.) and enhanced dv/dt ruggedness (100 V/ns vs. 75 V/ns). No layout or drive circuit changes are required for upgrade.

What is the recommended gate resistor value for 200 kHz LLC operation?

A 4.7 Ω gate resistor is validated in the datasheet (Table 6) for 300 V V_DD, 19.5 A I_D switching tests, yielding 28 ns t_d(on) and 60 ns t_d(off). For 200 kHz LLC with ZVS, 3.3–6.8 Ω balances switching speed, gate drive loss, and ringing suppression - values below 3.3 Ω increase EMI risk without meaningful efficiency gain.