Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW48NM60N

Name: STW48NM60N
Brand: STMicroelectronics
SKU: STW48NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW48NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW48NM60N.pdf

Description:: MOSFET N-CH 600V 44A TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:573

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW48NM60N from STMicroelectronics is an N-channel 600 V, 55 mΩ typ. (70 mΩ max.), 44 A MDmesh II Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant converters. It delivers low gate charge (124 nC), low input capacitance (4285 pF), and 100% avalanche tested ruggedness, enabling use in industrial SMPS, solar inverters, and UPS systems.

For engineers reviewing the STW48NM60N datasheet, STW48NM60N pinout, STW48NM60N application, or STW48NM60N equivalent, key selection criteria include R_DS(on) vs. temperature stability, unclamped inductive switching capability (E_AS = 457 mJ), dv/dt ruggedness (15 V/ns), and thermal resistance (R_thJC = 0.38 °C/W).

Technical Context

This MOSFET employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its low C_iss/C_oss ratio (4285 pF / 212 pF) and 9.5 pF Crss support fast, low-loss switching in high-frequency topologies like LLC and phase-shifted full-bridge.

The integrated body diode features 472 ns reverse recovery time (T_J = 25 °C) and 10.5 µC Q_rr, with specified di/dt immunity (400 A/µs) and peak I_RRM of 44.5 A - critical for ZVS operation and synchronous rectification replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50% voltage margin for surge and ringing.
R_DS(on) max	70 mΩ at V_GS = 10 V, I_D = 20 A - ensures <1.4 W conduction loss at 44 A (T_C = 25 °C).
Q_g	124 nC - enables efficient gate drive with standard 1–2 A peak drivers at 100–300 kHz.
E_AS	457 mJ - guarantees single-pulse unclamped inductive energy handling without failure.
R_thJC	0.38 °C/W - allows 330 W dissipation at T_C = 25 °C, supporting high-power density layouts.
dv/dt rating	15 V/ns - sustains reliable operation under fast transient conditions in high-di/dt circuits.

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole mounting with industry-standard footprint. Thermal path optimized via metal tab soldered to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; 1.6 Ω intrinsic gate resistance minimizes oscillation risk with moderate gate resistor values.
2 (D, TAB)	Drain (exposed metal tab)	Main power output node; electrically connected to case - requires isolation from heatsink unless floating design.
3 (S)	Source	Power return and gate reference; low-inductance source bond wires reduce switching loop inductance.

Key Features

Feature	Design Value
MDmesh II vertical structure	Reduces R_DS(on) × Q_g figure-of-merit by >30% vs. planar MOSFETs at 600 V, enabling higher efficiency at 100–500 kHz.
100% avalanche tested	Every unit validated for E_AS ≥ 457 mJ - eliminates need for external snubbers in flyback or PFC stages.
Low C_iss/C_oss ratio	4285 pF / 212 pF (20:1) - improves zero-voltage switching (ZVS) range and reduces capacitive turn-on loss.
Enhanced diode dV/dt immunity	15 V/ns rated dv/dt with I_SD ≤ 44 A - prevents false turn-on during high-speed commutation in bridge legs.

Applications

Industrial SMPS

Solar Inverter DC-DC Stage

Use Scenario: 3 kW telecom rectifier with active clamp forward topology operating at 200 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 44 A peak current and 600 V blocking.

Use Value: Low Q_g and R_DS(on) cut conduction + switching losses by 18% vs. legacy 600 V MOSFETs, raising efficiency from 94.2% to 95.7%.

Use Scenario: MPPT boost stage in string inverters, processing 1000 V DC input with 20 kHz switching.

IC Role / Device Role / Timing Role: High-voltage boost switch with unclamped inductive stress during fault events.

Use Value: 457 mJ E_AS withstands worst-case inductor energy dump without derating, eliminating need for crowbar protection.

UPS Inverter Half-Bridge

Induction Heating Resonant Tank

Use Scenario: Online double-conversion UPS delivering 5 kVA with IGBT-replacement requirement.

IC Role / Device Role / Timing Role: Low-side switch in 16 kHz half-bridge driving transformer-coupled output.

Use Value: 472 ns t_rr and 10.5 µC Q_rr reduce diode recovery loss by 65% vs. standard fast-recovery diodes, cutting thermal load on heatsink.

Use Scenario: 20 kW induction heater using series-resonant topology at 50–100 kHz.

IC Role / Device Role / Timing Role: Main resonant switch subjected to high di/dt (>300 A/µs) and repetitive avalanche stress.

Use Value: 15 V/ns dv/dt rating and 400 A/µs di/dt capability ensure stable commutation without shoot-through, even under load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	650 V, 99 mΩ, 34 A, TO-220FP; lower Q_g (72 nC) but higher R_DS(on) and no avalanche rating.	Limited to <2 kW designs; unsuitable for unclamped inductive loads or high-reliability UPS.	Select only when cost-sensitive, lower-current (<30 A), and snubber-assisted topologies are used.
IXFH50N60P	600 V, 85 mΩ, 50 A, TO-247; higher R_DS(on), no MDmesh optimization, E_AS not specified.	Requires larger heatsink due to 0.45 °C/W R_thJC; lacks guaranteed avalanche performance.	Prefer only if legacy design compatibility or specific gate threshold (3–5 V) is required over efficiency.

Compared with IPP60R099C7 and IXFH50N60P, STW48NM60N offers superior R_DS(on) × Q_g trade-off, certified avalanche robustness, and lower thermal resistance - making it optimal for compact, high-efficiency 3–5 kW industrial power stages where reliability under transient stress is non-negotiable.

Availability

STW48NM60N is available at Aetrix Electronics and suitable for industrial SMPS, solar inverter DC-DC stages, and UPS inverter half-bridges requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW48NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low conduction loss, fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW48NM60N supports 28 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS7057 Rev 6. This derating reflects thermal limits of the TO-247 package and ensures safe operation within SOA boundaries up to 10 ms pulse width.

Does this MOSFET have a fully rated body diode for synchronous rectification?

No - while the integrated body diode has characterized parameters (V_SD = 1.6 V, t_rr = 472 ns, Q_rr = 10.5 µC at T_J = 25 °C), it is not optimized for synchronous rectification duty. Its reverse recovery behavior remains suitable for freewheeling in hard-switched topologies but lacks the soft recovery profile of dedicated SR FETs.

Can STW48NM60N be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (see Figure 11) enables stable current sharing across paralleled units. Designers must match gate drive impedance, layout symmetry, and thermal coupling; typical practice uses ≤3 devices with individual 10 Ω gate resistors and Kelvin source connections.

Is the TO-247 package lead-free and RoHS compliant?

Yes - STW48NM60N is supplied in ECOPACK®-compliant TO-247 packages meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full environmental compliance data is published in ST's ECOPACK documentation portal.

STW48NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 124 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4285 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW48NM60N FAQ

1.How can I place an order for STW48NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW48NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW48NM60N reliable?

The price and inventory of STW48NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW48NM60N is usually 5 days.

3.What payment methods are accepted for STW48NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW48NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW48NM60N?

STW48NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW48NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW48NM60N?

For technical support, including STW48NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW48NM60N requirements.

6.How does Aetrix verify that STW48NM60N is sourced from the original manufacturer or authorized distributors?

All STW48NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW48NM60N meets industry standards.

7.What is the process for return or replacement of STW48NM60N?

All STW48NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW48NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW48NM60N part is unused and in its original packaging.

Return procedure for STW48NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…