STMicroelectronics STW50N65DM2AG

Overview

STW50N65DM2AG from STMicroelectronics is an automotive-grade N-channel 650 V, 70 mΩ typ. (87 mΩ max.), 38 A Power MOSFET in TO-247 package, featuring fast-recovery body diode (trr = 150 ns @ TJ = 25 °C), ultra-low Qg (69 nC), and AEC-Q101 qualification - deployed in high-efficiency ZVS phase-shift converters and full-bridge SMPS for on-board chargers and traction inverters.

For engineers reviewing the STW50N65DM2AG datasheet, STW50N65DM2AG pinout, STW50N65DM2AG application, or STW50N65DM2AG equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), avalanche energy rating (850 mJ), low Coss eq. (256 pF), and Zener-protected gate - critical for reliable operation in high-voltage automotive power stages.

Technical Context

This MDmesh DM2-series device integrates a fast-recovery body diode with Qrr = 0.96 µC and trr = 150 ns at 25 °C (245 ns at 150 °C), enabling reduced switching losses in hard- and soft-switching topologies. Its low RDS(on) × Qg figure of merit (≈6.0 Ω·nC) and 100% avalanche-tested construction support robust operation under transient overvoltage and unclamped inductive load conditions.

The MOSFET delivers stable threshold voltage (VGS(th) = 3–5 V) and normalized RDS(on) drift <1.8× across –55 to 150 °C, while its 100 V/ns dv/dt ruggedness and 1000 A/μs di/dt capability ensure immunity to parasitic turn-on during high-speed commutation in bridge configurations.

Key Specifications

Pinout & Package

Delivered in TO-247 package with isolated tab (drain-connected), standard 3-pin layout optimized for high-current thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH50N65X2 and IPP65R099C7, STW50N65DM2AG uniquely balances AEC-Q101 compliance, 38 A current rating, and 150 ns trr - making it the only option qualified for automotive ZVS converters requiring both high current and fast diode recovery.

Availability

STW50N65DM2AG is available at Aetrix Electronics and suitable for on-board chargers, traction inverters, industrial UPS systems, and server PSUs requiring stable component supply across automotive and industrial production programs.

Supply support for STW50N65DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in automotive on-board chargers, traction inverters, and industrial SMPS topologies demanding fast diode recovery and avalanche robustness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW50N65DM2AG supports 24 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS11149 Rev 4. This derating reflects thermal limits imposed by RthJC = 0.42 °C/W and safe operating area constraints - not gate drive or silicon limitations. Operation above this current requires pulse-width limitation or enhanced heatsinking verified via SOA curves.

Is the body diode suitable for synchronous rectification in resonant converters?

Yes - the integrated fast-recovery body diode has trr = 150 ns and Qrr = 0.96 µC at TJ = 25 °C (245 ns / 2.7 µC at 150 °C), enabling effective use in LLC and phase-shift full-bridge converters without external Schottky diodes. Its low IRRM (12.8 A) and soft recovery characteristics reduce EMI and voltage overshoot during commutation.

Does the TO-247 package have an isolated or drain-connected tab?

The TO-247 package uses a drain-connected metal tab (Pin 2), confirmed by pinout diagram in DS11149 Figure 19 and marking "D(2, TAB)" in the datasheet. This configuration allows direct thermal coupling to the heatsink while requiring electrical isolation between heatsink and system ground unless explicitly designed for drain-referenced mounting.

What is the gate threshold voltage range and its temperature stability?

VGS(th) ranges from 3.0 V to 5.0 V at 25 °C (Table 4), with normalized variation ≤±15% across –55 to 150 °C (Figure 8). This tight, predictable threshold enables robust gate drive design using standard 12–15 V logic-level drivers without risk of partial turn-on or excessive Miller plateau duration.