STMicroelectronics STW50N65DM6

Overview

STW50N65DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 650 V V_DS, 74 mΩ typ. R_DS(on) at V_GS = 10 V, 33 A continuous drain current at T_C = 25 °C, fast-recovery body diode (t_rr = 130 ns, Q_rr = 0.65 µC), and 100% avalanche tested. It targets ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STW50N65DM6 datasheet, STW50N65DM6 pinout, STW50N65DM6 application, or STW50N65DM6 equivalent, this page delivers verified electrical specs, TO-247 package mapping, diode recovery behavior, gate charge profile (Q_g = 52.5 nC), thermal resistance (R_thJC = 0.5 °C/W), and real-world switching performance in hard- and soft-switching topologies.

Technical Context

This device implements ST's MDmesh DM6 superjunction architecture optimized for high-voltage switching efficiency. Its low C_oss (165 pF) and ultra-low Q_rr enable reduced turn-off losses and minimal voltage overshoot during diode commutation in resonant and phase-shifted full-bridge converters.

The integrated Zener-protected gate structure supports ±25 V V_GS rating and ensures robustness against transient overvoltage. Extremely high dv/dt ruggedness (100 V/ns) and 560 mJ single-pulse avalanche energy (E_AS) allow reliable operation under unclamped inductive switching stress.

Key Specifications

Pinout & Package

STW50N65DM6 is housed in a TO-247 package with isolated tab (drain-connected), enabling direct mounting to heatsinks without insulating pads when drain is at system ground potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Compared with IXTH50N65X2 and IPP65R099C7, STW50N65DM6 uniquely balances low R_DS(on), ultra-fast diode recovery, and guaranteed avalanche ruggedness in a thermally optimized TO-247 package-making it the preferred choice for mission-critical ZVS and high-reliability bridge topologies.

Availability

STW50N65DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, renewable energy inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STW50N65DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh DM6 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in resonant and soft-switching topologies such as PSFB, LLC, and totem-pole PFC.

FAQ

What is the maximum recommended gate resistor value for STW50N65DM6 in a 500 kHz PSFB design?

A 4.7 Ω gate resistor is validated in the datasheet test circuit (Figure 14) for 520 V V_DD, 33 A ID, and 10 V drive. At 500 kHz, this yields ~19 ns turn-on delay and 12 ns rise time. Increasing beyond 10 Ω risks excessive switching loss and thermal runaway; values below 2.2 Ω require careful layout to avoid gate oscillation.

Can STW50N65DM6 replace STW48N60M2 in an existing 600 V PFC design?

Yes-STW50N65DM6 offers higher V_DS (650 V vs. 600 V), lower R_DS(on) (74 mΩ vs. 85 mΩ), and superior Q_rr (0.65 µC vs. 1.1 µC). Pin-compatible in TO-247, but gate threshold is slightly higher (3.25–4.75 V vs. 3–4.5 V), requiring verification of driver compatibility at light loads.

Is the TO-247 tab electrically isolated in STW50N65DM6?

No-the metal tab is internally connected to the drain (Pin 2). This is confirmed in the pinout diagram (AM01476v1_tab) and package outline (Figure 19). When mounted to a heatsink, the drain node must be either at system ground or fully insulated using a ceramic washer or mica pad if floating.

Does STW50N65DM6 support paralleling for higher current applications?

Yes-its positive temperature coefficient for R_DS(on) (see Figure 10) ensures inherent current sharing. Datasheet Figure 10 shows R_DS(on) increases 2.2× from -50 °C to 150 °C, promoting thermal stability. For parallel operation, match gate resistors within ±5 % and ensure symmetrical PCB layout and thermal coupling.