Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW50NB20

Name: STW50NB20
Brand: STMicroelectronics
SKU: STW50NB20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW50NB20

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW50NB20.pdf

Description:: MOSFET N-CH 200V 50A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,423

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW50NB20 from STMicroelectronics is an N-channel enhancement-mode PowerMESH™ MOSFET rated for 200 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 0.047 Ω typical R_DS(on) at V_GS = 10 V. It features ±30 V gate-source voltage rating, 100% avalanche tested capability, and is optimized for high-speed switching in high-current power conversion stages such as welding inverters and UPS systems.

For engineers reviewing the STW50NB20 datasheet, STW50NB20 pinout, STW50NB20 application, or STW50NB20 equivalent, key selection criteria include its 200 V breakdown voltage, low 0.047 Ω on-resistance, 84 nC total gate charge, 4 V/ns dv/dt capability, and TO-247 package thermal performance with R_thj-case = 0.44 °C/W.

Technical Context

This MOSFET employs ST's proprietary PowerMESH™ strip layout and edge termination structure to achieve minimum R_DS(on) per die area and exceptional unclamped inductive switching robustness. Its 100% avalanche-tested rating supports reliable operation under transient overvoltage conditions without external snubbers.

The device delivers low intrinsic capacitances (C_iss = 3400 pF, C_oss = 900 pF) and minimized gate charge (Q_g = 84 nC), enabling efficient high-frequency switching up to several hundred kHz in hard-switched topologies while maintaining low conduction and switching losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum blocking voltage before avalanche onset; defines use in 100–170 V DC bus systems with safety margin.
R_DS(on)	0.047 Ω (typ) at V_GS = 10 V - Enables <1.2 W conduction loss at 50 A, critical for thermal management in high-current SMPS.
I_D (cont)	50 A at T_C = 25 °C - Supports high-output power designs; derates to 32 A at 100 °C case temperature.
Q_g	84 nC - Low gate drive energy requirement reduces driver IC stress and enables faster turn-on with standard 4.7 Ω gate resistors.
dv/dt	4 V/ns - High immunity to parasitic turn-on during fast voltage transients in bridge-leg configurations.
E_AS	1000 mJ - Single-pulse avalanche energy rating allows safe operation during inductive load switching without clamping circuits.
R_thj-case	0.44 °C/W - Enables 280 W dissipation at 25 °C case temperature; requires heatsink with ≤0.5 °C/W thermal resistance for full-power operation.

Pinout & Package

STW50NB20 uses a TO-247 package with three terminals: Drain (pin 1), Source (pin 2), and Gate (pin 3). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless referenced to high-side potential.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically tied to metal tab; requires insulating pad when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance connection essential for stable switching; common return for gate driver ground.
Gate	Control electrode for channel conduction	Requires 10 V drive for full enhancement; ±30 V absolute max rating prevents oxide damage during transients.

Key Features

Feature	Design Value
PowerMESH™ strip layout	Reduces R_DS(on) per unit area by >20% vs conventional planar structures, improving power density.
100% avalanche tested	Guarantees robustness against unclamped inductive switching events without derating or external protection.
Low C_iss/C_oss ratio	3400 pF / 900 pF enables predictable Miller plateau behavior and stable gate drive design.
Fast reverse recovery diode	trr = 330 ns, Q_rr = 3.5 µC - Minimizes commutation losses in synchronous rectification and half-bridge freewheeling.
High dv/dt immunity	Rated 4 V/ns - Suppresses false triggering in high dV/dt environments like motor drives and welding inverters.

Applications

Welding Inverter Primary Switch

UPS Inverter Half-Bridge

Use Scenario: High-current DC link switching in IGBT/MOSFET-based inverter stages of arc welding equipment operating at 10–20 kHz.

IC Role / Device Role / Timing Role: Main power switch handling 50 A peak currents with fast turn-off to minimize switching losses during arc initiation.

Use Value: 0.047 Ω R_DS(on) and 84 nC Q_g reduce conduction and gate drive losses, enabling compact heatsink design and >95% efficiency at 15 kW output.

Use Scenario: Bidirectional power flow control in online double-conversion UPS systems with 200 V DC bus and 50 Hz/60 Hz AC output.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology managing battery-to-inverter power transfer during mains failure.

Use Value: 200 V V_DS rating accommodates 170 V nominal DC bus with 20% ripple; 1000 mJ E_AS ensures reliability during load dump transients.

Industrial Motor Drive Output Stage

High-Power SMPS Primary Switch

Use Scenario: Three-phase inverter output stage driving 10–30 kW induction motors in HVAC and pump applications.

IC Role / Device Role / Timing Role: Low-side switch in six-pack configuration with independent gate control for precise PWM timing and dead-time management.

Use Value: 4 V/ns dv/dt rating prevents shoot-through in high dV/dt motor winding environments; low Q_gd/Q_g ratio improves controllability during Miller region.

Use Scenario: Primary-side switch in 1–3 kW telecom and industrial switched-mode power supplies using forward or LLC resonant topologies.

IC Role / Device Role / Timing Role: Hard-switched or resonant-switched power transistor operating at 100–300 kHz with zero-voltage or zero-current switching assist.

Use Value: 3400 pF C_iss and 125 pF Crss enable predictable resonant tank interaction; low R_DS(on) sustains high efficiency across wide load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH50N20	R_DS(on) = 0.050 Ω (typ), Q_g = 92 nC, R_thj-case = 0.45 °C/W	Slightly higher gate charge increases driver loss; identical 200 V/50 A rating and TO-247 package	Acceptable drop-in replacement where marginal gate drive margin exists; verify thermal interface with same heatsink.
IRFP460	R_DS(on) = 0.27 Ω (max), Q_g = 140 nC, V_DS = 500 V	Higher on-resistance and gate charge increase conduction and switching losses; higher voltage rating adds cost and capacitance	Only suitable if 500 V rating is required; not recommended for 200 V systems due to inferior efficiency and thermal performance.

Compared with IXFH50N20 and IRFP460, STW50NB20 offers the lowest R_DS(on) and gate charge among 200 V-class TO-247 MOSFETs, delivering superior thermal efficiency and reduced driver complexity in high-frequency, high-current applications.

Availability

STW50NB20 is available at Aetrix Electronics and suitable for welding inverters, uninterruptible power supplies, industrial motor drives, and high-power SMPS requiring stable component supply and long-term production continuity.

Supply support for STW50NB20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The STW50NB20 belongs to ST's PowerMESH™ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in demanding industrial and energy infrastructure applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW50NB20 supports 32 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247 package and must be applied in thermal design calculations alongside R_thj-case = 0.44 °C/W and ambient/heatsink conditions.

Is the body diode suitable for synchronous rectification?

Yes-the integrated source-drain diode has t_rr = 330 ns and Q_rr = 3.5 µC at T_j = 150 °C, making it usable in non-critical synchronous rectification roles. However, its V_SD = 1.5 V at 50 A indicates higher conduction loss than Schottky alternatives, so it is best suited for freewheeling rather than primary rectification.

Can STW50NB20 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed by normalized R_DS(on) vs. temperature curves) enables stable current sharing when paralleled with identical units. Use matched gate resistors and symmetrical PCB layout to minimize dynamic imbalance; limit total parallel count to ≤3 devices without active current balancing.

What is the safe operating area (SOA) limitation for pulsed drain current?

The pulsed drain current I_DM is rated at 200 A, but pulse width is strictly limited by the SOA curve-not datasheet headline values. At V_DS = 100 V, maximum pulse width is ~10 µs; at 200 V, it drops to <1 µs. Exceeding SOA risks thermal runaway and bond-wire failure, even with short pulses.

STW50NB20 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 115 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 280W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW50NB20 FAQ

1.How can I place an order for STW50NB20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW50NB20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW50NB20 reliable?

The price and inventory of STW50NB20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW50NB20 is usually 5 days.

3.What payment methods are accepted for STW50NB20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW50NB20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW50NB20?

STW50NB20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW50NB20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW50NB20?

For technical support, including STW50NB20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW50NB20 requirements.

6.How does Aetrix verify that STW50NB20 is sourced from the original manufacturer or authorized distributors?

All STW50NB20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW50NB20 meets industry standards.

7.What is the process for return or replacement of STW50NB20?

All STW50NB20 units undergo pre-shipment inspection (PSI). If there is an issue with STW50NB20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW50NB20 part is unused and in its original packaging.

Return procedure for STW50NB20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…