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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW54NM65ND

Name: STW54NM65ND
Brand: STMicroelectronics
SKU: STW54NM65ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW54NM65ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW54NM65ND.pdf

Description:: MOSFET N-CH 650V 49A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW54NM65ND from STMicroelectronics is a 650 V, 54 A, N-channel SuperMESH™3 power MOSFET in TO-247 package, featuring 45 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and optimized for high-efficiency hard-switching SMPS applications including server PSUs and telecom rectifiers.

For engineers reviewing the STW54NM65ND datasheet, STW54NM65ND pinout, STW54NM65ND application, or STW54NM65ND equivalent, key selection criteria include breakdown voltage rating, conduction loss at rated current, avalanche ruggedness, gate charge for switching loss estimation, and thermal resistance in TO-247 mounting configurations.

Technical Context

This device implements ST's third-generation SuperMESH™ process to achieve low R_DS(on) while maintaining high dV/dt immunity and robust short-circuit withstand time (≥1 µs at V_DD = 400 V). It uses planar vertical DMOS architecture with field-limiting rings for stable 650 V blocking capability.

The MOSFET features a fully characterized body diode with soft recovery (Q_rr = 490 nC, t_rr = 180 ns), enabling use in PFC boost stages without external antiparallel diodes in many designs. Gate threshold voltage is specified at 3.0–5.0 V, supporting standard 12 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports universal AC input (85–265 VAC) rectified bus voltages up to 400 VDC with margin for transients
R_DS(on) max	45 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 54 A DC, suitable for high-current primary-side switches
I_D continuous	54 A @ T_c = 25 °C - requires heatsinking to maintain junction temperature ≤150 °C under full load
Q_g	120 nC - determines gate driver current requirement (~2 A peak for 60 ns turn-on with 10 Ω gate resistor)
E_oss	1200 nJ @ V_DS = 400 V - quantifies output capacitance energy loss during hard-switching transitions
R_thJC	0.45 °C/W - defines thermal path from junction to case; mandates mechanical interface <0.25 °C·in²/W for reliable 54 A operation

Pinout & Package

Package: TO-247AC (3-pin, straight lead, isolated tab). Mounting surface must be electrically insulated from heatsink unless drain is referenced to chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current sink terminal	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for minimizing switching oscillation and accurate current monitoring
Gate	Control electrode	High-impedance input requiring <100 pF layout capacitance; sensitive to ESD and ringing above 20 V

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees single-pulse energy handling up to 450 mJ without degradation-critical for overvoltage fault tolerance in offline converters
SuperMESH™3 Technology	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation-enables higher frequency operation without efficiency penalty
Soft Recovery Body Diode	Q_rr/I_rr ratio of 1.05 ensures minimal voltage overshoot during reverse recovery-reduces snubber losses in PFC stages
Enhanced dV/dt Immunity	Rated for 4.5 V/ns at V_DD = 400 V-prevents false turn-on in high-noise industrial environments with fast-rising bus transients

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for datacenter PSU.

IC Role / Device Role / Timing Role: High-current, high-voltage main switching element operating at 200–500 kHz with zero-voltage switching.

Use Value: 45 mΩ R_DS(on) reduces conduction loss by 22% vs. comparable 600 V MOSFETs, improving full-load efficiency from 95.2% to 95.8%.

Use Scenario: Active clamp forward primary switch in 2.5 kW telecom -48 V rectifier.

IC Role / Device Role / Timing Role: Hard-switched main transistor with active clamp reset, cycling at 150 kHz.

Use Value: 100% avalanche rating eliminates need for external clamping circuits, reducing BOM count by two TVS diodes and associated layout area.

Industrial Motor Drive Inverter

EV Charger Front-End

Use Scenario: Upper-leg IGBT replacement in 15 kW three-phase inverter for HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching device in 60 Hz–2 kHz PWM-controlled inverter leg.

Use Value: Soft-recovery body diode allows elimination of external freewheeling diodes, simplifying gate drive isolation and reducing thermal footprint.

Use Scenario: Boost switch in 11 kW AC/DC OBC front-end stage.

IC Role / Device Role / Timing Role: Unidirectional high-efficiency switch in continuous conduction mode (CCM) boost converter.

Use Value: Low Q_g (120 nC) enables use of cost-optimized 2 A gate driver IC instead of 4 A variant, lowering system gate drive cost by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R041CFD7	R_DS(on) = 41 mΩ but V_DS = 650 V; higher Q_g (145 nC); no avalanche rating	Lacks guaranteed avalanche ruggedness-requires additional overvoltage protection circuitry	Select only if strict avalanche testing is not required and gate drive strength permits higher Q_g
IXFH54N65X2	R_DS(on) = 44 mΩ; Q_g = 110 nC; includes ultra-low Q_rr (220 nC) but higher C_iss	Better diode recovery for high-frequency PFC, but higher capacitive switching loss at 500 kHz+	Prefer for >300 kHz PFC stages where diode recovery dominates loss; avoid in LLC where C_oss loss matters more

Compared with IPP65R041CFD7 and IXFH54N65X2, STW54NM65ND uniquely balances avalanche ruggedness, moderate Q_g, and industry-standard TO-247 compatibility-making it optimal for cost-sensitive, reliability-critical offline SMPS where fault tolerance cannot be compromised.

Availability

STW54NM65ND is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for STW54NM65ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW54NM65ND belongs to ST's SuperMESH™3 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power conversion in enterprise and infrastructure equipment.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The STW54NM65ND has a maximum junction temperature (T_j) rating of 150 °C. Continuous operation at this limit requires thermal design ensuring R_thJA ≤ 1.2 °C/W with forced air cooling or R_thJC ≤ 0.45 °C/W with properly torqued heatsink mounting. Derating is mandatory above 125 °C ambient.

Is the body diode suitable for synchronous rectification?

No-the body diode is not optimized for synchronous rectification due to its relatively high forward voltage (V_SD ≈ 1.7 V) and slow recovery compared to dedicated Schottky or GaN-based SR FETs. It is intended for freewheeling and clamping, not bidirectional conduction.

Does STW54NM65ND support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing when paralleled. Designers must match gate drive loop inductance (<5 nH) and use Kelvin source connections to prevent oscillation; derate total current by 15% for thermal imbalance.

What is the recommended gate resistor value for 300 kHz hard-switching?

A 10 Ω non-inductive gate resistor is recommended for 300 kHz operation, providing ~60 ns turn-on and ~45 ns turn-off delays while limiting peak gate current to ~2.2 A. Layout must minimize gate loop area to suppress ringing above 100 MHz.

STW54NM65ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 24.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 188 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 6200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 350W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW54NM65ND FAQ

1.How can I place an order for STW54NM65ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW54NM65ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW54NM65ND reliable?

The price and inventory of STW54NM65ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW54NM65ND is usually 5 days.

3.What payment methods are accepted for STW54NM65ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW54NM65ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW54NM65ND?

STW54NM65ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW54NM65ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW54NM65ND?

For technical support, including STW54NM65ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW54NM65ND requirements.

6.How does Aetrix verify that STW54NM65ND is sourced from the original manufacturer or authorized distributors?

All STW54NM65ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW54NM65ND meets industry standards.

7.What is the process for return or replacement of STW54NM65ND?

All STW54NM65ND units undergo pre-shipment inspection (PSI). If there is an issue with STW54NM65ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW54NM65ND part is unused and in its original packaging.

Return procedure for STW54NM65ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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