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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW55NM50N

Name: STW55NM50N
Brand: STMicroelectronics
SKU: STW55NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW55NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW55NM50N.pdf

Description:: MOSFET N-CH 500V 54A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW55NM50N from STMicroelectronics is an N-channel 500 V, 54 A, 0.040 Ω R_DS(on) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant converters. It delivers low gate charge (180 nC), high avalanche ruggedness (1600 mJ), and fast switching (t_d(off) = 250 ns) in industrial SMPS and PFC stages.

For engineers reviewing the STW55NM50N datasheet, STW55NM50N pinout, STW55NM50N application, or STW55NM50N equivalent, key selection criteria include its 500 V V_DSS, 0.040 Ω R_DS(on) at V_GS = 10 V, 180 nC total gate charge, 350 W power dissipation, and 100% avalanche-tested reliability under inductive load stress.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure with strip layout, enabling ultra-low R_DS(on) × Q_g figure-of-merit (2.16 Ω·nC). Its 15 V/ns dv/dt immunity and 630 ns reverse recovery time support robust operation in high-frequency bridge and totem-pole PFC topologies.

The MOSFET features a co-packaged body diode with 1.5 V forward voltage at 54 A and 15 A repetitive avalanche current rating. Thermal resistance is specified at 0.36 °C/W junction-to-case, confirming suitability for forced-air-cooled 3–5 kW power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 V AC input rectified rails with 25% safety margin in offline SMPS
R_DS(on) max	0.054 Ω - ensures <1.5 W conduction loss at 54 A continuous drain current
Q_g	180 nC - enables efficient gate drive with standard 1–2 A peak drivers at 100–300 kHz
E_AS	1600 mJ - provides single-pulse unclamped inductive energy handling without failure
t_r/t_f	40/70 ns - minimizes switching transition losses in ZVS/ZCS soft-switching circuits
R_thj-case	0.36 °C/W - allows 350 W dissipation with ≤128 °C case temperature rise above ambient
V_SD	1.5 V - limits body diode conduction loss during dead-time in half-bridge configurations

Pinout & Package

TO-247 package: isolated tab (drain), 3-pin through-hole mounting with 5.45 mm lead pitch. Standard pin assignment: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; 2 Ω gate input resistance simplifies RC snubber design
Pin 2 (Drain)	High-side power node	Connected to heatsink via electrically isolated tab; handles full 500 V blocking
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver; carries full 54 A load current

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces specific on-resistance by 35% vs first-gen MDmesh, enabling smaller die size at same R_DS(on)
100% avalanche tested	Guarantees robustness against inductive kickback in motor drives and relay snubbers without derating
Low C_iss/C_oss ratio (5800/370 pF)	Improves zero-voltage switching (ZVS) initiation in LLC resonant converters
ECOPACK® lead-free construction	Meets RoHS Directive 2011/65/EU and JEDEC JESD97 marking requirements for green manufacturing

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3 kW active clamp forward converter operating at 200 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 54 A peak current and 500 V blocking.

Use Value: 0.040 Ω R_DS(on) reduces conduction loss to <1.2 W, improving full-load efficiency by 0.8% over prior gen.

Use Scenario: 48 V output, 1200 W telecom rectifier using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: PFC boost switch managing 27 A RMS current with 100 kHz switching.

Use Value: 180 nC Q_g enables gate drive with IR2110-based driver, minimizing driver power consumption.

Induction Heating Inverters

Uninterruptible Power Supplies

Use Scenario: 5 kW resonant inverter driving 20 kHz induction coil with 500 V DC link.

IC Role / Device Role / Timing Role: Half-bridge upper switch subjected to 15 A repetitive avalanche stress during zero-current switching.

Use Value: 1600 mJ E_AS rating eliminates need for external avalanche clamping components.

Use Scenario: Online double-conversion UPS with 3-phase IGBT inverter stage and 400 V battery bank.

IC Role / Device Role / Timing Role: Auxiliary DC-DC converter switch regulating control board supply from battery bus.

Use Value: 150 °C T_j(max) and 0.36 °C/W R_thj-case ensure stable operation under sustained 40°C ambient + 20°C heatsink rise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP50R520CP	550 V, 0.52 Ω R_DS(on), 13.5 A ID - higher on-resistance, lower current rating	Targeted at <1 kW flyback and auxiliary supplies, not main PFC or inverter switches	Select when cost sensitivity outweighs efficiency needs and thermal budget permits higher R_DS(on)
STW48NM50	500 V, 0.055 Ω R_DS(on), 48 A ID - legacy MDmesh™ I device with 20% higher Q_g	Same TO-247 footprint but lacks 100% avalanche test and optimized C_oss for ZVS	Acceptable drop-in replacement only if existing design already validated with STW48NM50

Compared with IPP50R520CP and STW48NM50, STW55NM50N offers superior R_DS(on) × Q_g trade-off and guaranteed avalanche capability-critical for new 2–5 kW industrial power designs where efficiency and ruggedness are prioritized over legacy compatibility.

Availability

STW55NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, induction heating inverters, and uninterruptible power supplies requiring stable component supply and long-term lifecycle assurance.

Supply support for STW55NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in 1–10 kW industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW55NM50N supports 35 A continuous drain current at T_C = 100 °C, per Table 2 Absolute Maximum Ratings. This derating reflects thermal limitations of the TO-247 package and must be applied in thermally constrained layouts without forced airflow or oversized heatsinks.

Does this MOSFET require a negative gate turn-off voltage?

No. The device specifies ±25 V absolute maximum gate-source voltage and operates reliably with 0 V to +10 V gate drive. Negative turn-off bias is unnecessary due to its low gate threshold voltage (2–4 V) and robust noise immunity in hard-switching environments.

Can STW55NM50N replace STW48NM50 in an existing design?

Yes, it is a direct pin-compatible upgrade with identical TO-247 footprint and improved specs: 0.040 Ω vs 0.055 Ω R_DS(on), 180 nC vs 220 nC Q_g, and 100% avalanche testing. No PCB changes are needed, though gate drive strength should be verified for faster switching transitions.

Is the body diode suitable for synchronous rectification?

No. The source-drain diode has 1.5 V forward voltage and 630 ns reverse recovery time-too slow and lossy for synchronous rectification. It is intended only for freewheeling and clamping functions in non-critical recovery paths.

STW55NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 54mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 350W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW55NM50N FAQ

1.How can I place an order for STW55NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW55NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW55NM50N reliable?

The price and inventory of STW55NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW55NM50N is usually 5 days.

3.What payment methods are accepted for STW55NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW55NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW55NM50N?

STW55NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW55NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW55NM50N?

For technical support, including STW55NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW55NM50N requirements.

6.How does Aetrix verify that STW55NM50N is sourced from the original manufacturer or authorized distributors?

All STW55NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW55NM50N meets industry standards.

7.What is the process for return or replacement of STW55NM50N?

All STW55NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STW55NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW55NM50N part is unused and in its original packaging.

Return procedure for STW55NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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